TC5735 Search Results

Contextual Info: TC5735 PRELIM INARY INFORM ATION C BAND POWER FET G a A s F I E L D E F F E C T T R A N S I S T O R FEATURES • • • • 28dBm output power at 1dB gain compression High associated gain : 10dB @8GHz Low thermal resistance Low source inductance • High power added efficiency : 35% @8GHz

DSTC57357003

Contextual Info: TC5735 Wide Band Power FET GaAs Field Effect Transistor § High reliability Description The TC5735 is a C band Schottky barrier Field Effect Transistor with a 0.5µm Aluminium gate, source via holes and gold plated heatsink for a minimum source parasitic inductance and a better

AH512

Abstract: AH513 AH514 ah503 AH370 AH681 AH610 ah496 AH-512 AH374
Contextual Info: A LP H A N U ME RI CA L PRODUCT INDEX P/N ADC20010 Page P/N Page P/N Page 259 AH228 35 AH458 AFC378 55 AH229 35 AH479 17 AFC500 AH 152 43 35 35 AH480 17 29 AH230 AH232 AH 153 29 AH 154 35 35 AH155 29 29 AH233 AH234 AH235 35 AH156 29 35 AH157 29 AH236 AH237