DSZ412SE Search Results

Contextual Info: DSZ412SE43 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current230 @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage4.3k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.5k¥ V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)300 @Temp. (øC) (Test Condition)25#

Contextual Info: DSZ412SE42 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current230 @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage4.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.5k¥ V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)300 @Temp. (øC) (Test Condition)25#

LT 7250

Contextual Info: M ITEL DSZ412SE Avalanche Diode SEMICONDUCTOR Supersedes Novem ber 1994, version 1.1 DS5107-2.0 FEATURES • Double Side Cooling. ■ High Surge Capability. ■ Avalanche Capability. December 1998 KEY PARAMETERS VRRM 4400V * 230A *fs m 1500A f a v APPLICATIONS

DSZ412SE

Abstract: DSZ412SE44
Contextual Info: DSZ412SE DSZ412SE Avalanche Diode Replaces July 2000 version, DS5107-3.3 DS5107-4.0 October 2001 KEY PARAMETERS FEATURES • Double Side Cooling VRRM 4400V ■ High Surge Capability IF AV 219A ■ Avalanche Capability IFSM 1500A APPLICATIONS ■ Freewheel Diode

Contextual Info: DSZ412SE41 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current230 @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage4.1k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.5k¥ V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)300 @Temp. (øC) (Test Condition)25#

Contextual Info: DSZ412SE40 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current230 @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage4.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.5k¥ V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)300 @Temp. (øC) (Test Condition)25#

DSZ412SE

Abstract: DSZ412SE44 AN4839
Contextual Info: DSZ412SE DSZ412SE Avalanche Diode Replaces July 2000 version, DS5107-3.3 DS5107-4.0 October 2001 KEY PARAMETERS FEATURES • Double Side Cooling VRRM 4400V ■ High Surge Capability IF AV 219A ■ Avalanche Capability IFSM 1500A APPLICATIONS ■ Freewheel Diode

Contextual Info: M ITEL DSZ412SE Avalanche Diode SEMICONDUCTOR Supersedes Novem ber 1994, version 1.1 DS5107-2.0 FEATURES • Double Side Cooling. ■ High Surge Capability. ■ Avalanche Capability. Decem ber 1998 KEY PARAMETERS VRRM 4400V *f a v 230A *fs m 1500A APPLICATIONS

Contextual Info: DSZ412SE44 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current230 @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage4.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.5k¥ V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)300 @Temp. (øC) (Test Condition)25#

DSZ412SE

Abstract: DSZ412SE44
Contextual Info: DSZ412SE DSZ412SE Avalanche Diode Replaces July 2000 version, DS5107-3.3 DS5107-4.0 October 2001 KEY PARAMETERS FEATURES • Double Side Cooling VRRM 4400V ■ High Surge Capability IF AV 219A ■ Avalanche Capability IFSM 1500A APPLICATIONS ■ Freewheel Diode

DSZ412SE

Abstract: DSZ412SE44
Contextual Info: DSZ412SE DSZ412SE Avalanche Diode Replaces July 2000 version, DS5107-3.3 DS5107-4.0 October 2001 KEY PARAMETERS FEATURES • Double Side Cooling VRRM 4400V ■ High Surge Capability IF AV 219A ■ Avalanche Capability IFSM 1500A APPLICATIONS ■ Freewheel Diode

Tag 225-600

Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

M303R

Abstract: im303 m303 DS412 DS502 DS912
Contextual Info: MARCONI CKT TECHNOLOGY 30E l> • 5783442 Q001721 T ■ " p OI-íí CONVERTER a A V A L A N C H E D IO D ES Series Type Stud Cathode Repetitive Peak Reverse Reverse Available Nonrepetltive Peak Reverse Voltage Peak Reverse Current at Tyj V RRM V VRSM V ! RM

kpb 307

Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

31053A2

Abstract: BST45 17331A2 BSA45 30504A2 bsr45
Contextual Info: re c tifie r diodes discs D isc D evices v TO @ T VJ rT @ T vj RthQ-c pth c-hs) T v, @ T vl (kA) (A2sx103) (V) (mQ) (°C/W) fC/W ) (•C) 1205 9 405 0.75 0.25 0.07 0.02 175 11120t+ 6010 6639 17500 37.4 51.5 162 7000 8490 84500 0.6 0.6 0.6 0.872 0.0514 0.0225

DS412

Abstract: DS502 DS912 M303 34004 C 4385
Contextual Info: MARCONI CKT T E C H N O L O G Y 30E D • S7S3445 0001751 T ■ 'pCI-ÌÌ CONVERTER & AVALANCHE DIODES Series Type Stud Cathode Silicon Diameter Voltage Slud Anode Repetitive Peak Reverse Reverse Available Nonrepetttive Peak Reverse Voltage Peak Reverse Current

MP02X

Abstract: DCR10 DYNEX DG648 DCR1596SW DIM200PHM33
Contextual Info: a lp h a n u m e r ic p a r t lis t Part No. ACR300SG ACR400SE ACR44U DCR1002SF DCR1003SF DCR1006SF DCR1008SF DCR1020SF DCR1021SF DCR1374SBA DCR1375SBA DCR1376SBA DCR1474SY DCR1475SY DCR1476SY DCR1478SY DCR1574SY DCR1575SY DCR1576SY DCR1594SW DCR1595SW DCR1596SW

DCR2950W

Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half