DS3003 Search Results

tab1043

Abstract: 1096p
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3003 - 3.0 VP1058 8-BIT, 25MHz, VIDEO FLASH ADC SINGLE + 5V SUPPLY The VP1058 is a low power analog-to-digital flash converter which requires no preceding sample and hold

ultrasonic water level sensor

Abstract: ultrasonic level transmitter LM90100 ultrasonic range cm level LM90-1001 water level controller with lcd display
Contextual Info: EchoSpan DS300350-REV:A TM Ultrasonic Level Transmitter Specifications Rear View Shown LU81: 8" to 16.4' 20 cm to 5m LU83: 8" to 26.2' (20 cm to 8m) LU84: 12" to 32.8' (30 cm to 10m) ± 0.2% of span in air Accuracy: LU81/83: 0.039" (1 mm) Resolution: LU84: 0.078" (2 mm)

tab1043

Abstract: tab1043 replacement 1N4148 2N2222 AD842 DG28 REF12Z VP1058
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3003 - 3.0 VP1058 8-BIT, 25MHz, VIDEO FLASH ADC SINGLE + 5V SUPPLY The VP1058 is a low power analog-to-digital flash converter which requires no preceding sample and hold

DIRECT Replacement with Analog Devices

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3003 - 3.0 VP1058 8-BIT, 25MHz, VIDEO FLASH ADC SINGLE + 5V SUPPLY The VP1058 is a low power analog-to-digital flash converter which requires no preceding sample and hold

K2X pnp

Abstract: K2X TO J-STD-020A MMBT4401 MMBT4401-7 MMBT4403
Contextual Info: MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT4401 Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4403 Ideal for Medium Power Amplification and Switching SOT-23 A C Mechanical Data · · ·

RM3182A

Abstract: RM3182AL RM3182AS
Contextual Info: Electronics Semiconductor Division RM3182A ARINC 429 Differential Line Driver Features Description • • • • • • • • • • The RM3182A is a complete differential line driver IC. When Data A = Data B or Sync or Clock Signal is low, the driver forces the output to a Voltage Null level

Contextual Info: BYT40Y 1.0A HIGH VOLTAGE GLASS BODY RECTIFIER POWER SEMICONDUCTOR Features • • • Hermetically Sealed Glass Body Construction High Voltage to 1600V with Low Leakage Surge Overload Rating to 25A Peak A A B C Mechanical Data • • • • • D Case: DOT-30B, Glass

DS1304

Abstract: aem r10k SMP3316-103M ds1303 renco 4r7 SMTDR54-120M smtdr75 SMTDR75-680K SMTDR75-221K MLF1608A1R0KT
Contextual Info: Bourns P/N CI100505-1N0D CI100505-1N2D CI100505-1N5D CI100505-1N8D CI100505-2N2D CI100505-2N7D CI100505-3N3D CI100505-3N9D CI100505-4N7D CI100505-5N6D CI100505-6N8J CI100505-8N2J CI100505-10NJ CI100505-12NJ CI100505-15NJ CI100505-18NJ CI100505-22NJ CI100505-27NJ

DS30030

Abstract: 4b42
Contextual Info: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

202 sod57

Abstract: DS30034 NI 4001
Contextual Info: SF4001 - SF4007 1.0A ULTRA-FAST RECOVERY GLASS BODY RECTIFIER POWER SEMICONDUCTOR Features • • • • Hermetically Sealed Glass Body Construction Fast Switching for High Efficiency Surge Overload Rating to 30A Peak Low Reverse Leakage Current A A B C

QED22X

Abstract: QED221 QED222 QED223
Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QED221 QED222 QED223 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM SCHEMATIC 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) ANODE

400w power amplifier circuit diagram

Abstract: RM3182A RM3182AL RM3182AS
Contextual Info: www.fairchildsemi.com RM3182A ARINC 429 Differential Line Driver Features Description • • • • • • • • • • The RM3182A is a complete differential line driver IC. When Data A = Data B or Sync or Clock Signal is low, the driver forces the output to a Voltage Null level

Infrared Phototransistor

Abstract: QSB363 QEB363 QEB373
Contextual Info: SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSB363 PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) 0.055 (1.4) 0.008 (0.21)

L14C2

Abstract: L14C1
Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR L14C1 L14C2 PACKAGE DIMENSIONS 0.230 5.84 0.209 (5.31) 0.195 (4.96) 0.178 (4.52) 0.030 (0.76) MAX 0.210 (5.34) MAX 0.500 (12.7) MIN 0.100 (2.54) SCHEMATIC 0.050 (1.27) 0.100 (2.54) DIA. (CONNECTED TO CASE) COLLECTOR 3 2 1

QSD733

Contextual Info: PLASTIC SILICON INFRARED PHOTODARLINGTON QSD733 PACKAGE DIMENSIONS 0.190 4.83 0.178 (4.52) 45° REFERENCE SURFACE 0.235 (5.97) 0.218 (5.54) 0.030 (0.76) 0.800 (20.3) MIN EMITTER COLLECTOR 0.050 (1.27) 0.100 (2.54) NOM SCHEMATIC 0.215 (5.46) NOM 0.020 (0.51)

qed12x

Contextual Info: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°

D880

Contextual Info: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°

Infrared Phototransistor

Abstract: QSB320
Contextual Info: QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)

K1 MARK 6PIN

Abstract: MOC1193S
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES

Infrared Phototransistor

Abstract: phototransistor support QSE122
Contextual Info: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE122 PACKAGE DIMENSIONS 0.175 4.44 0.087 (2.22) Ø0.065 (1.65) 0.050 (1.27) 0.200 (5.08) Ø0.095 (2.41) 0.500 (12.70) MIN COLLECTOR EMITTER 0.020 (0.51) SQ. (2X) SCHEMATIC Collector 0.030 (0.76) 0.100 (2.54) 0.100 (2.54)

Contextual Info: PLASTIC SILICON INFRARED PHOTODARLINGTON QSE133 PACKAGE DIMENSIONS 0.175 4.44 0.087 (2.22) Ø0.065 (1.65) 0.050 (1.27) 0.200 (5.08) Ø0.095 (2.41) 0.500 (12.70) MIN COLLECTOR EMITTER SCHEMATIC 0.020 (0.51) SQ. (2X) COLLECTOR 0.030 (0.76) 0.100 (2.54) 0.100 (2.54)

Infrared Phototransistor

Abstract: QSB320
Contextual Info: QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)

K1N TRANSISTOR

Abstract: MMBT3904 k1n marking code sot23 marking C1N MMBT3904 40V SOT23 marking K1N K1N diodes MMBT3904 c1n
Contextual Info: MMBT3904 40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

MOC8020

Abstract: MOC8021 IR phototransistor
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC8020 DESCRIPTION MOC8021 PACKAGE DIMENSIONS The MOC8020 and MOC8021 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.