DS2016 Search Results

DS2016

Abstract: DS2016R DS2016S SEPTEMBER10
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: September 10, 1999 Product Change Notice – I91501 Subject: Package Obsolescence - DS2016S 2K x 8 3V/5V Operation Static RAM Description of Change: Effective October 30, 1999, Dallas Semiconductor will no longer produce or sell the DS2016S 2K

Contextual Info: DS2016 DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current - 50 nA max at tA = 25°C Vc c = 3.0V - 100 nA max at tA = 25°C V cc = 5.5V 1 |iA max at tA = 60°C Vc c = 5.5V • Full operation for V qc = 5.5V to 2.7V

DS2016

Abstract: DS2016-100 DS2016-150 DS2016R DS2016S
Contextual Info: DS2016 2k x 8 3V/5V Operation Static RAM www.dalsemi.com FEATURES § § § § § § § § § § § Low-power CMOS design Standby current − 50 nA max at tA = 25°C VCC = 3.0V − 100 nA max at tA = 25°C VCC = 5.5V − 1 µA max at tA = 60°C VCC = 5.5V Full operation for VCC = 5.5V to 2.7V

DS2016S

Abstract: DS2016S-100 DS2016
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: February 28, 1996 Subject: PRODUCT CHANGE NOTICE – B60801 Description: DS2016 200ns to 250ns Change Description of Change: Effective May 1, 1996, the specified 3–volt access time of the DS2016 will change from 200ns to 250ns.

VI05

Abstract: DS2016 DS2016-100 DS2016S
Contextual Info: DS 2016 DALLAS s e m ic o n d u c to r DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low pow er C M OS design • S tandby current A7 C 1 24 □ VCC A6 C 2 ^ 23 □ A8 A9 - 50 nA m ax at tA = 25°C V Cc = 3.0V A5 C 3 22 □ - 100 nA max at tA = 25°C V Cc = 5.5V

Contextual Info: DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT 50 nA max at tA = 25°C Vc c = 3.0V 100 nA max at tA = 25°C Vcc = 5.5V 1 nA max at tA = 60°C VCc = 5.5V • Full operation for Vcc = 5-5V to 2.7V • Data Retention Voltage = 5.5V to 2.0V

DS2016

Abstract: DS2016-100 DS2016-150 DS2016R DS2016S
Contextual Info: DS2016 2k x 8 3V/5V Operation Static RAM www.dalsemi.com FEATURES Low-power CMOS design Standby current − 50 nA max at tA = 25°C VCC = 3.0V − 100 nA max at tA = 25°C VCC = 5.5V − 1 µA max at tA = 60°C VCC = 5.5V Full operation for VCC = 5.5V to 2.7V

DS2016

Abstract: DS2016-100 DS2016-150 DS2016R
Contextual Info: DS2016 2k x 8 3V/5V Operation Static RAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT Low-power CMOS design Standby current - 50nA max at tA = 25°C VCC = 3.0V - 100nA max at tA = 25°C VCC = 5.5V - 1µA max at tA = 60°C VCC = 5.5V

Contextual Info: DS2016 DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CM OS design • Standby current - 50 nA max at tA = 25°C VCc = 3.0V - 100 n A m a x at tA = 25°C V GG = 5.5V - 1 |uA max at tA = 60°C Vc c = 5.5V

Contextual Info: DS2016. DS2016S DALLAS SEMICONDUCTOR DS2016, DS2016S 2K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design A7 • Standby current A6 C 1 C 2 ASH 50 nA max at tA = 25°C V cc = 3.0V 100 nA max at t* = 25°C Vcc = 5.5V 1 jA max at t* = 60°C Vcc = 5.5V

Contextual Info: DS2016 DALLAS SEMICONDUCTOR DS2016 2K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • Standby current 50 nA max at tA = 25°C V cc = 3.0V 100 nA max at tA = 25°C Vc c = 5.5V 1 nA max at tA = 60°C V cc = 5.5V • Full operation for V cc = 5.5V to 2.7V

DALLAS SEMICONDUCTOR Ds1235

Abstract: megatest tester DS1235 ds1630 megatest tester datasheet DS2237 DS1217 dallas ds1230 DS1220 ON SEMICONDUCTOR TRACEABILITY
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: 05/24/97 Subject: PRODUCT CHANGE NOTICE - E71301 Description: Tester Change for DS2016, DS2064, DS2068, and DS2257

DS2016

Abstract: DS2016S
Contextual Info: DS2016 DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current – 50 nA max at tA = 25°C VCC = 3.0V – 100 nA max at tA = 25°C VCC = 5.5V – 1 µA max at tA = 60°C VCC = 5.5V • Full operation for VCC = 5.5V to 2.7V

DS2016

Abstract: DS2016S
Contextual Info: DS2016 DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current – 50 nA max at tA = 25°C VCC = 3.0V – 100 nA max at tA = 25°C VCC = 5.5V – 1 µA max at tA = 60°C VCC = 5.5V • Full operation for VCC = 5.5V to 2.7V

Contextual Info: DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CM OS design • Standby current A7 C 1 24 □ VCC A6 E 2 23 □ A8 A9 - 50 nA m ax at tA = 25°C VCc = 3.0V A5 C 3 22 □ - 100 nA max at tA = 25°C VCc = 5.5V

Contextual Info: DALLAS SEMICONDUCTOR DS2016 2K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • Standby current 50 nA max at tA = 25°C Vcc = 3.0V 100 nAmaxat tA = 25°C VCc = 5.5V 1 mA max at tA = 60°C VCc = 5.5V • Full operation for Vcc = 5-5V to 2.7V

DS2016

Abstract: DS2016-100 DS2016R
Contextual Info: DS2016 2k x 8 3V/5V Operation Static RAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT Low-power CMOS design Standby current - 50nA max at tA = +25°C VCC = 3.0V - 100nA max at tA = +25°C VCC = 5.5V - 1µA max at tA = +60°C VCC = 5.5V

Contextual Info: DS2016 DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current A7 G 1 24 J A6G 2 23 □ AS 3 22 □ A9 WE v cc - 50 nA max at tA = 25°C V cc = 3.0V - 100 nA max at tA = 25°C VCc = 5.5V

Contextual Info: DS2016, DS2016S DALLAS SEMICONDUCTOR DS2016, DS2016S 2K x 8 3V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current 50 nA max at tA = 25°C VCc = 3.0V 100 nA max at tA = 25°C Vcc = 5.5V 1 |iA max at tA = 60°C Vcc = 5.5V

Contextual Info: DS90LT012AH DS90LT012AH High Temperature 3V LVDS Differential Line Receiver Literature Number: SNLS199 DS90LT012AH High Temperature 3V LVDS Differential Line Receiver General Description Features The DS90LT012AH is a single CMOS differential line receiver designed for applications requiring ultra low power

Contextual Info: LM4846 Output Capacitor-less Audio Subsystem with Programmable National 3D General Description Key Specifications The LM4846 is an audio power amplifier capable of delivering 500mW of continuous average power into a mono 8Ω bridged-tied load BTL with 1% THD+N, 25mW per channel

dubilier capacitor

Abstract: CORNELL DUBILIER CAPACITOR
Contextual Info: LM2717-ADJ Dual Step-Down DC/DC Converter General Description Features The LM2717-ADJ is composed of two PWM DC/DC buck step-down converters. Both converters are used to generate an adjustable output voltage as low as 1.267V. Both also feature low RDSON (0.16Ω) internal switches for maximum

SMPS pcb CIRCUIT diagram

Contextual Info: LP3879 Micropower 800mA Low Noise "Ceramic Stable" Voltage Regulator for Low Voltage Applications General Description Features The LP3879 is a 800 mA fixed-output voltage regulator designed to provide high performance and low noise in applications requiring output voltages between 1.0V and

L4946SQ

Contextual Info: LM4946 Output Capacitor-Less Audio Subsystem with Programmable National 3D General Description Key Specifications The LM4946 is an audio power amplifier capable of delivering 540mW of continuous average power into a mono 8Ω bridged-tied load BTL with 1% THD+N, 35mW per channel