DS12887B
Abstract: voltage acceleration ON SEMICONDUCTOR TRACEABILITY
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: September 10, 1996 Subject: PRODUCT CHANGE NOTICE – I60302 Description: Burn-in Condition Change for Module Component IC – DS12887B Description of Change:
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i60302ds12887bvoltage accelerationon semiconductor traceability |
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DS2503
Abstract: DS12C885 DS2505 DS1225Y DS2068 DS2414 DS1868 c1 a6 B712 DS83C950
Contextual Info: RMP Process Samples 0.8 µm Double Poly, Double Metal Monitor Device s Product Rev DS2154 DS2152 A2 DS2154 A2 DS80CH10 A3 DS80CH10 A5 0.6 µm 0.6 µm A2 DS32KHZ A6 A3 Double Poly, Double Metal (Ti/TiN layers used on all Metals) Product Rev DS1722 A2 DS1775
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ds2154ds2152ds80ch10ds32khz+14ds1722ds21352ds21552ds2196ds2503ds12c885ds2505ds1225yds2068ds2414ds1868c1 a6b712ds83c950
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DS1235YW
Abstract: ds1480 DS1235YWl DS2228-1MG DS1242 DS2402 ds2403 DS1990A-f50 DS2228-4MG DS1833A
Contextual Info: RELIABILITY MONITOR PROCESS TECHNOLOGY SAMPLING PLAN VEHICLE TECHNOLOGY 0.8 µ Double Poly, Single Metal w/TEOS-OxyNitride Passivation DS87520 DS1302 DS1315 DS17485 DS21S07A DS2153 DS1868 DS1706 DS1800 DS1817 DS1866 DS1305 DS17285 DS1306 DS17485 DS1307 DS17885
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ds87520ds87523ds87530ds2118+15ds1302ds1315ds17485ds1721ds83ch20ds1235ywds1480ds1235ywlds2228-1mgds1242ds2402ds2403ds1990a-f50ds2228-4mgds1833a
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DS1235YW
Abstract: DS1235YWL DS2228-1MG DS1242 DS1868 DS1187 ds1480 DS1671 DS83520 DS1241
Contextual Info: RELIABILITY MONITOR PROCESS TECHNOLOGY SAMPLING PLAN VEHICLE DS87520 TECHNOLOGY 0.8 µ Double Poly, Single Metal w/TEOS-OxyNitride Passivation DS87520 DS1302 DS1585 DS1306 DS17485 DS1307 DS17885 DS1315 DS1803 DS1623 DS1806 DS1627 DS2430A DS1670 DS2437 DS1673
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ds87520ds87523ds87530ds2118+14ds1302ds1721ds83ch20ds12885bds1235ywds1235ywlds2228-1mgds1242ds1868ds1187ds1480ds1671ds83520ds1241
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