DMP210DUFB4 Search Results

Contextual Info: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) -20V 5 @ VGS = -4.5V 7 @ VGS = -2.5V 10 @ VGS = -1.8V 15 @ VGS = -1.5V ID TA = +25°C -200mA -170mA -140mA -50mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching

Contextual Info: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) -20V 5Ω @ VGS = -4.5V 7Ω @ VGS = -2.5V 10Ω @ VGS = -1.8V 15Ω @ VGS = -1.5V ID TA = +25°C -200mA -170mA -140mA -50mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching

DN1G

Contextual Info: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) P-Channel MOSFET Low On-Resistance • 5.5Ω @ -4.5V • 7.5Ω @ -2.5V • 11.5Ω @ -1.8V • 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH), 1.15V max

DMP210DUFB4

Contextual Info: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(on) • • ID P-Channel MOSFET Low On-Resistance • 5.5Ω @ -4.5V • 7.5Ω @ -2.5V • 11.5Ω @ -1.8V • 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH), 1.15V max

Contextual Info: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) P-Channel MOSFET Low On-Resistance • 5.5Ω @ -4.5V • 7.5Ω @ -2.5V • 11.5Ω @ -1.8V • 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH), 1.15V max

Contextual Info: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • • ID RDS(on) P-Channel MOSFET Low On-Resistance • 5.5Ω @ -4.5V • 7.5Ω @ -2.5V • 11.5Ω @ -1.8V • 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH), 1.15V max

NX3008

Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
Contextual Info: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1

DMN26D0UFB4-7B

Abstract: SDPB1K10NB-7 DDTC115TUA LMN200B01 DMN5L06TK DMP2012SN DMN5L06DMK MMDT3946LP4 DDTB123EU DDTD114GC
Contextual Info: DATE: 7th April, 2011 PCN #: 2020 PCN Title: Qualification of Additional Wafer Fabrication Sources Dear Customer: This is an announcement of change s to products that are currently being

complementary MOSFET TO252

Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Contextual Info: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)