DS35026 Search Results

Contextual Info: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) -20V 5 @ VGS = -4.5V 7 @ VGS = -2.5V 10 @ VGS = -1.8V 15 @ VGS = -1.5V ID TA = +25°C -200mA -170mA -140mA -50mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching

Contextual Info: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) -20V 5Ω @ VGS = -4.5V 7Ω @ VGS = -2.5V 10Ω @ VGS = -1.8V 15Ω @ VGS = -1.5V ID TA = +25°C -200mA -170mA -140mA -50mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching

DN1G

Contextual Info: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) P-Channel MOSFET Low On-Resistance • 5.5Ω @ -4.5V • 7.5Ω @ -2.5V • 11.5Ω @ -1.8V • 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH), 1.15V max

DMP210DUFB4

Contextual Info: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(on) • • ID P-Channel MOSFET Low On-Resistance • 5.5Ω @ -4.5V • 7.5Ω @ -2.5V • 11.5Ω @ -1.8V • 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH), 1.15V max

Contextual Info: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) P-Channel MOSFET Low On-Resistance • 5.5Ω @ -4.5V • 7.5Ω @ -2.5V • 11.5Ω @ -1.8V • 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH), 1.15V max

Contextual Info: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • • ID RDS(on) P-Channel MOSFET Low On-Resistance • 5.5Ω @ -4.5V • 7.5Ω @ -2.5V • 11.5Ω @ -1.8V • 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH), 1.15V max