DD317 Search Results

BFQ290

Abstract: BFQ291
Contextual Info: Philips Semiconductors • bbSBTBl DD317Ô4 T T 1 ■ ! A P X ^ l^ 2!Ì2ÌÌ22il2E 2£ÌÌÌ£2ÌÌ^ PNP HDTV video transistor BFQ290 N AnER PHILIPS/DISCRETE b^E D PINNING FEATURES 4 DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1

P10T

Abstract: BFQ236 BFQ236A BFQ256 BFQ256A
Contextual Info: Philips S em iconductors bb53*ì31 DD31723 bflG M A P V NPN 1 GHz video transistors BFQ236; BFQ236A N FEATURES Product specification AUER P H IL IP S /D IS C R E T E b^E PINNING • High breakdown voltages • Low output capacitance PIN 1 • High gain bandwidth product

Contextual Info: Philips Semiconductors bb53T31 DD317flb flbM W A P X Preliminary specification PNP HDTV video transistor BFQ292 — N AMER PHILIPS/DISCRETE b'lE D PINNING FEATURES DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 emitter • High gain bandwidth product

motorola transistor 5331

Abstract: BFQ268
Contextual Info: Philips Semiconductors bbS3T31 DD317LÛ 64^ MAPX NPN 1 GHz video transistor ^ BFQ268; BFQ268/I N DESCRIPTION Product specification AMER PHILIPS/DISCRETE b^E D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a gold sandwich metallization to

Contextual Info: Philips Semiconductors b b s a ' m DD31700 DAB • APX £ NPN 1 GHz video transistors Product specification BFQ231; BFQ231A N AMER PHILIPS/DISCRETE FEATURES bTE D PINNING • High breakdown voltages DESCRIPTION PIN • Low output capacitance 1 • High gain bandwidth product

sfr 135

Abstract: 29 WP 230 sharp tv delay to produce power LH28F160BVHE-BTL90 marking code adi label
Contextual Info: Preliminary Product Stecificwions « Q t B j j j j k f r % jr j> Integrated Circuits Group LH28F160BVHE-BTL90 Flash Memory 1 6 M 2 M x 8 /1 M x 1 6 (Model No.: LHF16V11) Spec No.: EL10Y079A Issue Date: September 8, 1999 aiaP71A DD31734 Tbl SHARP LHF16V11

ic ZN 415

Abstract: BTB10
Contextual Info: 30E T> m 7*12=1237 DD317QÛ ö • S G S -T H O M S O N BTB 10 AW ^D § iLig?H©[MD©i S G S-THOMSON~~ SNUBBERLESS TRIACS ■ It r m s = 1 0 A a t T c = 100 °C. ■ V d r m :200 V to 800 V. ■ ■ ■ ■ Ig t = 75 mA QI-II-III . GLASS PASSIVATED CHIP.

BTB 700

Contextual Info: 3QE ]> T ^ 7# • 7^5^237 DD317QQ 3 ■ S G S -T H O M S O N id ü C T M ie i if s G s " T 'Z S -lS - thohson BTB 08 BW SNUBBERLESS TRIACS ■ It r m s = 8 A at Tc = 95 °C. ■ Vdrm : 200 V to 800 V. ■ Igt = 50 mA Ql-ll-lll . ■ GLASS PASSIVATED CHIP.

Contextual Info: 3DE ]> ¿57 • 7^2*^537 DD31715 T S G S -T H O M S O N -p z s -is ULiOTTlFMDOi BTB 10 BW S 6 S-TH0MS0N SNUBBERLESS TRIACS ■ Itrms = 10 A at Tc = 100 °C. ■ Vdrm : 200 V to 800 V. ■ Ig t = 50 mA QI-II-III . ■ GLASS PASSIVATED CHIP. ■ HIGH SURGE CURRENT : It s m = 100 A.

Contextual Info: TOSHIBA TLCS-90 Series TMP90C041A CMOS 8-Bit Microcontrollers 2 TMP90C041N/TMP90C041F (3) 1. Outline and Characteristics The TMP90C041A is a high-speed advanced 8-bit microcontroller applicable to a variety of equipment. With its 8-bit CPU, A/D converter, multi-function timer/

Contextual Info: HB56H232 Series, HB56H132 Series 2,097,152-word x 32-bit High Density Dynamic RAM Module 1,048,576-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-700A Z Rev.1.0 Dec. 27, 1996 Description The HB56H232 is a 2M x 32 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM (HM5118165)

QML-38535

Abstract: stc 1740 RAS 0510 SMD AH STC 5005 SMJ44C256-12JDM SMJ44C256-15JDM MT4C4256C 5962-9061708 SMJ44C256-80JDM
Contextual Info: REVISIONS LTR DESCRIPTION DATE yr-mo-da APPROVED A_ Changes in accordance with NOR 5962-R049-93._ 92-12-09_M. A. Frye_ B Updated boilerplate. Added device types 06-10. - gig 98-10-02 Raymond Monnin THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED.

Contextual Info: Philips Semiconductors • b b S 3 T 31 D D 3 1 ? b fi 64T ■ NPN 1 GHz video transistor ^ i i — DESCRIPTION A P X ^^^Productspecification BFQ268; BFQ268/I ■ N AMER PHILIPS/DISCRETE b'lE D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a

Contextual Info: Philips Semiconductors bb 53^31 0031727 22 b PNP 1 GHz video transistors ^ N FEATURES WM A P X Product specification BFQ251; BFQ251A AUER PHILIPS/DISCRETE blE ]> PINNING • High breakdown voltages DESCRIPTION PIN » Low output capacitance 1 base • High gain bandwidth product

CRYSTAL-16

Abstract: ZU 607 st zo 607 24MHZ 48MHZ PC11 W164 xtal 3225 25 MHZ Crystal16
Contextual Info: Spread Spectrum Desktop/Notebook System Frequency Generator Features Key Specifications • M axim ized EMI su p p re ssio n u sin g C ypress’s Spread Spectrum tech n o lo g y • Reduces m easured EMI by as m uch as 10 dB • l2C program m able to 153 MHz 16 selectable

sis630

Abstract: S630 W207B 1.5v FM receiver CIRCUIT DIAGRAM 332 lsk 2sa 725
Contextual Info: CYPRESS PRELIMINARY W207B Spread Spectrum FTG for SÌS540 and 630 Chipsets Features Table 1. Pin Selectable Frequency • Maximized EMI Suppression using Cypress’s Spread Spectrum technology • Single-chip system frequency synthesizer for SÌS540 and SÌS630 core logic chip sets

W166

Abstract: W166G cypress ASSEMBLY OF ORIGIN 3ftg
Contextual Info: Spread Spectrum Frequency Timing Generator Features • Maximized EMI suppression using Cypress’s Spread Spectrum technology • Generates a spread spectrum copy of the provided input • Selectable spreading characteristics • Integrated loop filter components

Contextual Info: Data Sheet January 1998 Lucent Technologies Bell Labs Innovations NH020-Series Power SIPs: 5 Vdc Input; 1.5 Vdc to 3.3 Vdc Output; 20 W Features • Non-isolated output ■ Small size: 63.5 mm x 5.6 mm x 14.0 mm 2.50 in. x 0.22 in. x 0.55 in. ■ Constant frequency

Contextual Info: HB56HW164DB Series, HB56HW165DB Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-699A Z Rev. 1.0 Dec. 27,1996 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W16165) sealed in TSOP package and 1

3171S

Contextual Info: KM29V16000ARS Flash ELECTRONICS 2 M x 8 B i t NAND Flash Memory GENERAL DESCRIPTION FEATURES The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Single 3.3 - volt Supply • Organization - Memory Cell Array : (2M +64K)bit - Data Register Flash memory with a spare 64K(65,536)x8 bit. Its NAND

HB56HW465

Contextual Info: HB56HW465DB Series 4196304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-666 Z Preliminary Rev. 0.0 Sep .17,1996 Description The HB56HW465DB Series is a 4 M x 64 Dynamic RAM Small Outline Dual In-line Memory Module (S. O. DIMM), mounted 4 pieces of 64-Mbit DRAM (HM5165165ATT) sealed in TSOP package and 1

LW005F

Abstract: Lucent LW lucent technologies W series HZ120 ti 69 ScansU9X26
Contextual Info: Advance Data Sheet February 1998 Lucent Technologies Bell Labs Innovations LC/LW005 Series Power Modules: 18 Vdc to 36 Vdc or 36 Vdc to 75 Vdc Inputs, 5 W Features • Low profile: 10.2 mm x 25 mm x 32 mm 0.40 in. x 1 in. x 1.26 in. with standoffs (9.8 mm (0.385 in.)

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson BURR-BROWNa 1 DAC714 E 4 r 16-Bit DIGITAL-TO-ANALOG CONVERTER With Serial Data Interface FEATURES: DESCRIPTION • SERIAL DIGITAL INTERFACE DAC714 is a complete monolithic D/A converter. A precision +10V tem perature com pensated voltage

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R - BROW N» I DAC729 DAC729 1 El Ultra-High Resolution 18-BIT DIGITAL-TO-ANALOG CONVERTER CONVERTERS FEATURES • 16-BIT LINEARITY GUARANTEED (K Grade) • USER ADJUSTABLE TO 18-BIT LINEARITY • PRECISION INTERNAL REFERENCE