D1131SH Search Results

Contextual Info: Technische Information / technical information Schnelle beschaltungslose Diode D1131SH Fast Hard Drive Diode Key Parameters VRRM enndaten 6500 V IFAVM 1100 A TC=85 °C IFSM VT0 22000 3570A A (TC=55°C) 2,19 V rT 1,364 mΩ RthJC 7,5 K/kW Clamping Force 36 … 52 kN

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

2T930

Abstract: thyristor t 718 n t1791 D 1481 N 60 T SD178 649S D 2601 N 90 T 2651N gct thyristor T188F
Contextual Info: Clamping Force kN Phase control thyristors Type kN mm T 178 N T 201 N T 218 N T 268 N T 298 N T 308 N T 348 N T 358 N T 378 N T 380 N T 388 N T 398 N T 399 N T 458 N T 459 N T 501 N T 508 N T 509 N T 551 N T 568 N T 588 N T 589 N T 618 N T 619 N T 648 N

D711N

Abstract: D1481N D2601N D3001N D471N Dioden eupec igbt 150kV thyristor gct thyristor
Contextual Info: MARKETING NEWS European PowerSemiconductor and Electronics Company Dioden zu IGBT- und GCT-Umrichtern 1. Anwendungen Moderne Frequenzumrichter hoher Leistungen > ca. 1 MW werden in zunehmenden Maße mit IGBT- oder GCT- (Gate Controlled Thyristor) Bauelementen realisiert.

HIGH VOLTAGE DIODE kv

Abstract: freewheeling diodes 12-pulse medium frequency inverter series connection igbt eupec igbt EUPEC Thyristor gct thyristor D1481N D2601N D3001N
Contextual Info: MARKETING NEWS European PowerSemiconductor and Electronics Company Diodes for IGBT and GCT converters 1. Applications Modern high power frequency converters > approx. 1 MW are increasingly realised with IGBT or GCT (Gate Controlled Thyristor) devices. Here, the line side power converter is

EUPEC Thyristor

Abstract: Eupec Power Semiconductors rectifire diode rectifire D2601N T4301N d911sh design sine wave power inverter T1601 D1481N
Contextual Info: Application Note Date: 11.04.2005 AN-Number: AN2004-04 Page 1 Department:SM PHP Case non rupture current High power Semiconductors DIN IEC 60 747 – 2 Diodes and DIN IEC 747 – 6 (Thyristors) The case non rupture current is the current value by which the housing neither

D1331SH45T

Abstract: D1131SH65T D931SH65T D1481N D2601N D3001N D471N D711N 150kV thyristor d471
Contextual Info: MARKETING NEWS European PowerSemiconductor and Electronics Company Dioden zu IGBT- und GCT-Umrichtern 1. Anwendungen Moderne Frequenzumrichter hoher Leistungen > ca. 1 MW werden in zunehmenden Maße mit IGBT- oder GCT- (Gate Controlled Thyristor) Bauelementen realisiert.