D0D02 Search Results

VRBG5314S

Abstract: VRPY5314S wd1020
Contextual Info: A C INTERFACE INC IDE D | D0S33Ô3 D0D02Û7 2 STANLEY SUPER BRIGHT LED LAMP I BI COLOR TYPE 05 T-1 3/4 TYPE SERIES ISELECTION GUIDE COLOR "v: MATERIAL . J PART NUMBER Red Green GaAsP/Gap GaP V R B G 5314S Red Yellow GaAsP/GaP GaP V R P Y 5 31 4S • FEATURES

970HD

Contextual Info: 47E T> MONITOR PRODUCTS CO INC bE'ì'iOTb D0D02bS 1 • H P C O ^ j -¿,-4¿j MONITOR PRODUCTS M O N I T O R 970HD HIGH SPEED CMOS INDEPENDENT DUAL FREQUENCY OSCILLATOR PACKAGE DIMENSIONS FEATURES 970HD .815" M ax._ 2 0 .8 n .175" Min. (4.5) .200" Max.

dl604

Contextual Info: DATATRONICS EbE D • Efci514flE D0D0270 T -q .q -1 3 3 S E R IE S 604 5-TAPS 16 PIN FAST LOGIC D ELA Y MODULES 1 • 16 Pin D IL Package >TTL and D T L Compatible • 5 Equally Spaced Taps Specifications: • Supply Voltage • Logic 1 Input Current • Logic 0 Input Current

45016m

Abstract: J12-18C-R250U J12D-M204-R01M J12-18C-R01M J12D-M204-R02M metal detectors circuit HgCdTe PbSe Judson judson PA-100 J12-18C
Contextual Info: E G S G JUI1S0N 31E D m 3030b05 D0D0225 □ • JlID T -V /-V / Indium Arsenide Detector Operating Notes General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.6 urn wavelength range.

Contextual Info: Rectangular LED Array G30B and G32XB Series ¡/idea The G30B is made up of a 10 LED lamps. The design of the G30B precludes cutting of the holder to make different length units. The G32XB is made up of a maximum of 10 lamps per array. The G30B array has a shoulder top and bottom. The leads can be

Contextual Info: K n o x S e m ic o n d u c t o r , I n c SMV3022 SERIES SUPER HYPERABRUPT TUNING DIODES FORVCXO ’S • • • • • • • Extremely High Capacitance Swing Linear Characteristics Uniform Capacitance / Temperature Coefficient Highly Reproducible Ion Implanted Structure

Contextual Info: T- :- 34E D MACRONIX INC SbfifififiE □OQDl'ifi B • T'75-O?-iS MXBQ14 Preliminary_¡ V B A CORDLBRSS PHONE 1C HANDSET UNIT FEATURES: • • • • Reduce total component counts. Easy production and enhance productivity.

Contextual Info: :a l i l o n d l l Itr U « G T -4 8 0 0 1 A Switched Ethernet Controller forlOBaseX Preliminary Rev. Revision 1.4 7/17/97 Please contact Galileo Technology for possible updates before finalizing a design. FEATURES Single-chip, low cost, Switched Ethernet Controller

AKD12000

Abstract: Anadigics MMIC Downconverter lnb ku-band SI MMIC DOWNCONVERTER
Contextual Info: Data Sheet AKD12000 Ku-Band DBS MMIC Downconverter L^kM kDIGIG Your GaAs IC Source •{.- • .i.-.:■ #VvV •: i .i ’- . ’ a.,«*'4-; ■ Integrated Monolithic Downconverter V y« ■ 6 dB Noise Figure T ■ 35 dB Conversion Gain ■ Small Size

VERPACKUNGSVORSCHRIFT

Contextual Info: RA 2505.RA 2510 Si-Gleichrichterzellen in Button-Bauform Silicon Rectifier Button-Cell m 25 A Nominal current Nennstrom =a 50. 1000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung tr Plastic case, coloured metal ring indicates cathode

Contextual Info: FCI Semiconductor 6.0 A M P KBPC6 Series Preliminary Data Sheet S ing le Phase S ilicon Bridge Description Mechanical Dimensions KBPC6 Series Hole for # 6 Screw .040 Features O Small Size O Low Forward Voltage Drop O UL Recognition Available O_ 150 Amp Surge Overload Rating

Contextual Info: polyfet rf devices F9012 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended lifetime. Low output capacitance

Contextual Info: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEA TU R ES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages

Contextual Info: 1.8 x 5.3 mm LED Array G26XB. G28XB and G38XB Series The G26XB, G28XB and the G38XB series are each made up of the same rectangular LED lamps. The maximum number of lamps per array is 10, 5, and 12 respectively. The G26XB holder has a 1 mm wide shoulder top and bottom. The G28XBhas a

ISD1000A

Contextual Info: INFORMATION STORAGE <§> De v ic e s ß " OiipCorder' HCHMOCOCVÍYUO I S D 1 0 0 0 A S e r ie s Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations FEATURES • Easy-to-use single-chip voice record/play­ back solution Fully addressable to handle multiple

300D

Abstract: 400M L2008
Contextual Info: polyfet rf devices L2008 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1,11 process features gold metal for greatly extended lifetime. Low output capacitance

b72c

Abstract: L72s T1405
Contextual Info: SSE J> OAK TECHNOLOGY INC b72TMQS 0 0 0 0 2 4 1 T 431 « O A K T - v s t - 3 3 - n — naanm i V C E R U OAK TECHNOLOGY, INC. •••tim ti ••••m u ■■■ m ini May 1992 OTI-95C71 Video Compression/Expansion Processor DISTINCTIVE CHARACTERISTICS

lt 7209

Abstract: 7002 transistor sm EC112
Contextual Info: MôôbSlO OOOOHbb □ O I S O 45E D ISOCOM COMPONENTS LTD t H ll AV1X, H ll AV2X, H ll AV3X ._ % r ÆjH.j M m J - ifè -î « I » ! OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT DESCRIPTION The HI 1 AV is a optically coupled isolator consisting o f a Gallium Arsenide infrared emitting diode and a