VGS12V Search Results

Contextual Info: polyfet rf devices F9012 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended lifetime. Low output capacitance

Contextual Info: ¡SttSfiSSS FSL9110D, FSL9110R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description Features • 2.5A, -100V, rp s O N = 1.3012 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

250JIS

Contextual Info: GBü à ttm FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 18A, 250V, rDS 0N = 0.170Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs

Contextual Info: a h a r r is S E M I C O N D U C T O R FSF150D, FSF150R " " m Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 25A Note 1 , 100V, rDS(ON) = 0.070H • Total Dose - • Single Event - • Dose Rate TO-254AA Meets Pre-Rad Specifications to 100kRAD(Si)

Contextual Info: polyfet rf devices F2021 PATENTED GOLD METALIZED General Description pp p a c k a g e : Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"* process features gold metal for greatly extended