D02FL Search Results

IP710-DLX

Abstract: 8-28VDC
Contextual Info: Constant Voltage LED Dimmer E3X-D02FP - 315 MHz wireless w/ terminal block connections E9X-D02FL - 902 MHz wireless w/ flying lead connections NWO-D02FP - 0-10V controlled PWM dimmer no wireless capability Ultra Smooth LED Dimming •■ Architectural dimming

philips power transistor bd139

Abstract: BU406F BU407F 407F
Contextual Info: N AUER PHILIPS/DISCRETE bbiS3^31 D02fl53G 7M1! M A P X bU 4UblBU 407F bTE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistor in a SO T186 envelope w ith ele c tric a lly Isolated m ounting base, intended fo r use in converters, inverters, sw itching regulators

Contextual Info: TOSHIBA ^□•17240 D02flöL4 Tflfl TC551001BPI/BFI/BFn/BTRI-^5/10 ■a < ■D Ü CS <3 IB - SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS

Contextual Info: N AMER PHILIPS/DISCRETE ^ 5 3 ^ 3 1 D02fl4b4 TT3 I IAPX BUV27F BUV27AF b'lE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control

Contextual Info: TOSHIBA m E|[lcJ7EL4fl D02fl3ûfl T07 • TC51V16165BFT-70 PRELIMINARY 1,048,576 WORD X 16 BIT EDO DYNAMIC RAM Description The TC51V16165BFT is the Hyper Page M ode (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The TC51V16165BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide

PWS740

Contextual Info: BUWR-BROWWti IS0122 Precision Lowest Cost ISOLATION AMPLIFIER FEATURES APPLICATIONS • 100% TESTED FOR HIGH-VOLTAGE BREAKDOWN • RATED 1500Vrms • HIGH IMR: 140dB at 60Hz • BIPOLAR OPERATION: V0= ±10V • 16-PIN PLASTIC DIP AND 28-LEAD SOIC • EASE OF USE: Fixed Unity Gain

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R - BROW N« MPY634 Wide Bandwidth PRECISION ANALOG MULTIPLIER FEATURES DESCRIPTION • WIDE BANDWIDTH: 10MHz typ • ±0.5% MAX FOUR-QUADRANT ACCURACY • INTERNAL WIDE-BANDWIDTH OP AMP • EASY TO USE

Contextual Info: TOSHIBA T M P90C840A/841A A tten tion should be paid to the follow ing three modes h a vin g special circuits: INTO Level mode IF INTO is not an edge-based interrupt, the function of Interrupt Request Flip-flop is canceled. Therefore the interrupt request signal must be held

A2530

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N 0 PGA204 PGA205 Programmable Gain INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • DIGITALLY PROGRAMMABLE GAIN: The PGA204 and PGA205 are low cost, general pur­ pose programmable-gain instrumentation amplifiers

74LS04C

Abstract: gd5f 80515K m8ab
Contextual Info: 47E D • fl23SfciüS D02ÔS7D fl ■ SIEG SIEMENS AKT IENGESELLSCHAF Xsrv SAB 80515K 8-Bit Single-Chip Microcontroller ROM-less Version • • • • • • • • • • • • • A dditional bus interface fo r external m em ory 256 x 8 RAM S ix 8-bit ports

Contextual Info: PD 9.1453A International IO R Rectifier IRG4BC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3R31 0Q2flfl2M ^30 I IAPX bLUcJO/12 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 M H z communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile

BLU98

Contextual Info: N AUER PHILIPS/DISCRETE bTE T> m bbS3S3i ooeaaaB BLU98 J U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • emitter-ballasting resistors fo r an optimum temperature profile

Contextual Info: Data Sheet March 1997 microelectronics group Lucent Technologies Bell Labs Innovations T7115A Synchronous Protocol Data Formatter Dynamic channel allocation or channel concatenation supports DSO, HO, H11, and H12 channels and other channel rates Features

Contextual Info: DS4372-2.6 ITC14410012D POWERLINE N-CHANNELIGBT CHIP FEATURES • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed. ■ Latch-Free Operation. ■ Low Forward Voltage Drop. ■ Short Circuit Capability 10(xs TYPICAL KEY PARAMETERS (25 C)

Contextual Info: MITSUBISHI LSlS DCi iwuNAfW * 80 M5M418160CJ,TP-5,-6,-7, -5S,-6S,-7S FAST PAGE M O DE 16777216-B IT 1 Û 48576-W O RD B Y 16-B IT DYNAM IC RAM DESCRIPTION This is a fam ily of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal

Contextual Info: MITSUBISHI LSIs M 5 M 4 1 6 1 0 0 B J ,T P -5 ,- 6 ,-7 FAST PAGE MODE 16777216-BIT 16777216-WORD BY 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 16777216-word by 1-bit dynamic RAMS, fabricated with the high performance CMOS process,and is ideal

Contextual Info: MITSUBISHI LSIs M5M417400CJ,TP-5,-6,-7, -5S,-6S,-7S FAST PAGE MODE 16777216-BIT 4194304-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATIO N (TO P VIEW ) This is a family of 4194304-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal

Contextual Info: E2D0017-27-42 O K I Semiconductor M S M 6652/53/54/55/56-xxx, M SM 6652A/53A/ 54A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx Under development , MSM6650 Internal Mask ROM Voice Synthesis 1C, Internal One-Time-Programmable (OTP) ROM Voice Synthesis 1C, External ROM Drive Voice Synthesis 1C

Contextual Info: Data Sheet September 1997 m i c r o e l e c t r o n i c s gr oup Lucent Technologies Bell Labs Innovations JW050H, JW075H, JW100H, JW150H Power Modules: dc-dc Converters; 36 to 75 Vdc Input, 24 Vdc Output; 50 W to 150 W Features • Small size: 61.0 mm x 57.9 mm x 13.1 mm

Contextual Info: PD - 9.1269G In tern a tio n al IRF7507 IGR Rectifier HEXFET Power M OSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available In Tape & Reel Fast Switching

Contextual Info: N-CHANNEL POWER MOSFETS IRF620/621 FEATURES • • • • • • • Lower R d sio n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bb53^31 □D2flD31 813 PH2369 IAPX l SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P-N transistor in a plastic TO-92 envelope intended for high-speed switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter

Contextual Info: N AMER PHILIPS/DISCRETE t.'lE D ^ 5 3 ^ 3 1 QQ2fl2fl2 047 I IAPX BU705 BU705D Jl SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivated npn power transistor in a SOT93A envelope, intended for use in horizontal deflection circuits of television receivers. The BU705D has an integrated efficiency