D02FL3 Search Results

Contextual Info: TOSHIBA m E|[lcJ7EL4fl D02fl3ûfl T07 • TC51V16165BFT-70 PRELIMINARY 1,048,576 WORD X 16 BIT EDO DYNAMIC RAM Description The TC51V16165BFT is the Hyper Page M ode (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The TC51V16165BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide

A2530

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N 0 PGA204 PGA205 Programmable Gain INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • DIGITALLY PROGRAMMABLE GAIN: The PGA204 and PGA205 are low cost, general pur­ pose programmable-gain instrumentation amplifiers

Contextual Info: DS4372-2.6 ITC14410012D POWERLINE N-CHANNELIGBT CHIP FEATURES • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed. ■ Latch-Free Operation. ■ Low Forward Voltage Drop. ■ Short Circuit Capability 10(xs TYPICAL KEY PARAMETERS (25 C)

Contextual Info: N AMER PHILIPS/DISCRETE bbSB^Bl DDSfiBbR 5T4 « A P X b'lE P Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2520AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in

BST60

Contextual Info: T O S H I B A ^0^7240 OOHôBlS ÔÔ4 • - TC5116405BSJ/BST-60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116405BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5116405BSJ/

Contextual Info: IIP ^ Y ^ ^QT72 4 f l 0 0 2 ñ 2 cí i:í ñ 01 TC51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC51V16400BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. TheTC51 V16400BST uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar­

SSH10N80

Abstract: 250M SSH10N70
Contextual Info: N-CHANNEL POWER MOSFETS SSH10N80/70 FEATURES • Lower Rds<on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • improved high temperature reliability

Contextual Info: MITSUBISHI LSIs M5M44265CJ,TP-5,-6,-7, -5S,-6S,-7S EDO HYPER PAGE M O DE 4194304-BIT (262144-W O RD BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs with Hyper Page mode fuction, fabricated with the high performance