D0031 Search Results

DM 321

Abstract: magnetoresistance element
Contextual Info: SONY CORP/COMPONENT PRODS M^E D &3&R3&3 D0031b0 ^ DM-231 SO N Y . Magnetoresistance Element / *•Cq Description r DM-231 a magnetic sensor using magnétorésist­ ance effect is. composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is

Contextual Info: m I TAIWAN LITON ELECTRONIC UTE M ^E flfl3Sb^S ]> D0031ÔT LCD BACK LIGHT ~ MI-3» LTM -89X04 FEATURES • THE S O L ID L IG H T SOURCE BE ABLE TO R E D U C E M E C H A N IC A L S T R U C T U R E . • LOW POW ER R E Q U IR E M E N T . •E X C E L L E N T C H A R AC TER S APPEARANCE.

Contextual Info: • • H Y U N D A I H Y 5 1 1 7 8 1 0 S e r ie s 2 M x 8-bit CMOS DRAM with WPB DESCRIPTION The HY5117810 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5117810 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

OP223TX

Abstract: OP223TXV OP224S OP224TX OP224TXV
Contextual Info: @ .OPTEK P ro d u c t B u lle tin O P223TX, O P224S S e p te m b e r 1996 Hi-Reliability GaAIAs Infrared Emitting Diodes Types OP223TX, OP223TXV, OP224TX, OP224TXV, OP224S 069 i .7 5 062 (1 .5 7 ) 062 (1 .5 7 ) 058 (1 .4 7 ) .1 3 6 (3 .4 5 ) .1 1 7 (2 .9 7 )

RTD 1185

Abstract: OP196 OP296 OP496 501u 100A CURRENT SINGLE PHASE bridge rectifier
Contextual Info: Micropower RRIO Operational Amplifiers OP196/OP296/OP496 a FEATURES Rail-to-Rail Input and Output Swing Low Power: 60 ␮A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300 ␮V max High Open-Loop Gain: 500 V/mV

Contextual Info: Integrator Series FPGAs - 1200XL and 3200DX Famüies Features Cadence, Escalade, Exemplar, 1ST, M entor Graphics, Synopsys and Viewlogic High C a p a c ity • JTAG1149.1 Boundary Scan Testing • 2,500 to 40,000 logic gates • Up to 4 Kbits configurable dual-port SRAM

C350AVB

Abstract: full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder
Contextual Info: FUJITSU MICROELECTRONICS F U JIT S U wmmm 7flC D B 37MT7bH □D03c]4b 3 • JZ CMOS Gate Array GENERAL INFORMATION The Fujitsu CM O S gate array fam ily consists of tw en tyeight device types which are fabricated w ith advanced silicon gate CMOS technology. And more than 14 devices

R04AM

Abstract: powerex nd
Contextual Info: POldEREX m i INC H OS /B IS D e | 7 2 ,:1 4 b a i 00031D2 X 0 §~r FT1S0ÛDL Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeUana, France (43) 72.75.15 Phase Control SCR -f^QQ A m p e r e s A v g

3180S

Abstract: op07 ic metal package professional microphone preamp phono preamp OP07 balanced microphone inside schematic OP273 RIAA phono pre-amp pmi op27 OP27 IC 3180
Contextual Info: Low Noise, Precision Operational Amplifier OP27 PIN CONNECTIONS FEATURES Low noise: 80 nV p-p 0.1 Hz to 10 Hz , 3 nV/√Hz Low drift: 0.2 V/°C High speed: 2.8 V/μs slew rate, 8 MHz gain bandwidth Low VOS: 10 μV Excellent CMRR: 126 dB at VCM of ±11 V

sony 0642

Contextual Info: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron

TK15065

Contextual Info: r & T O K O TK15065/66 TWO INPUT/SINGLE OUTPUT VIDEO ANALOG SWITCH APPLICATIONS FEATURES • Low Output Impedance 100 Television ■ Less Sensitive to ESD than CMOS Devices VTR ■ Wide Bandwidth Switchers ■ Can Be Used as IF Bandwidth Switch Effects

capacitor 100-10L

Abstract: 100-10L SCX15DNC 100-10L WD SENSYM scx15dnc 100-10L AD DD118 ML2208 ML2200 ML2208CCP
Contextual Info: October 1994 PRELIM IN ARY Micro Linear ML2200, ML2208 12-Bit Plus Sign Data Acquisition Peripheral GENERAL DESCRIPTION FEATURES The M L2200 and M L2208 Data Acquisition Peripherals DAP are monolithic CM O S data acquisition subsystems. These data acquisition peripherals feature an input

efr-rtb40k2

Abstract: 13a1002-c3 ultrasonic receiver OP492 EFR* ultrasonic 13a1002 ntc 1k thermometer OP292 twin-t imperial m015
Contextual Info: Dual/Quad Single-Supply Operational Amplifiers OP292/OP492 APPLICATIONS Disk drives Mobile phones Servo controls Modems and fax machines Pagers Power supply monitors and controls Battery-operated instrumentation PIN CONFIGURATIONS OUTA 1 –INA 2 OP292 +INA 3

IL43 marking

Abstract: mb 3221 IL43 bit 3105 BTS 308 0314E irf 345h 2tu marking code BTS 716 G cj-cc
Contextual Info: P r e l im in a r y I n f o r m a t io n PMC PMC-Sierra, Inc. P M 63 44 EQUAD QUAD E1 FRAMER ISSUE 3 FEA TU RES • Integrates four full-featured E1 framers and transmitters in a single device for terminating duplex E1 signals. • Software and functionally compatible with the PM6341 E1XC Single E1

EM-189

Abstract: 68B09E Motorola 68A09 motorola 6809 bd 825 10 6809E 68A09 ic 2030 6809 assembly language programming 68B09
Contextual Info: A p p lied M icro sy stem s C orp oration É C « 4 " d aT V I 6 8 0 9 /6 8 0 9 E S eries M icroprocessors 5020 148th Ave. N.E. Redmond, WA 98052 or P.O. Box C-1002 Redmond, WA 98073-1002 Copyrightc 1984, All rights reserved T o ll Free Service: 1-800-426-3925

Sis 968

Abstract: 1S697 BP107 FT1500DL FT1500DL-12 SCR gate Control IC scr1500
Contextual Info: POldEREX m i I NC OS D e | 7 2 ,:1 4 b a i 00031D2 H / B IS X §~r FT1S0ÛDL Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeUana, France (43) 72.75.15 Phase Control SCR -f^QQ A m p e re s A v g

27DSA

Abstract: HIF7-60DA-1
Contextual Info: Receptacle Straight Type 1.905 0.3 x 0 .5 2 £ PCB Layout ffl Application Chart Center line for mounting eyes 40.60.80.100.120 Size H IF 7- & P A - 1 .2 7 D S ( L ) 2 - 1.905 1.905 H IF7-«PA -1,27D SA (L ) 02.8* 1.905 1 . 9 0 5 ± 0 .0 5 Polarization Mark

op07

Contextual Info: Ultralow Offset Voltage Operational Amplifier OP07 Data Sheet PIN CONFIGURATION Low VOS: 75 V maximum Low VOS drift: 1.3 μV/°C maximum Ultrastable vs. time: 1.5 μV per month maximum Low noise: 0.6 μV p-p maximum Wide input voltage range: ±14 V typical

Contextual Info: 3 TAIWAN LITON ELECTRONIC M^E D flfl35b*15 □□□3124 ITLIT 173 High Collector-emitter Voltage Type LITEK l w h é v ' • FEATURES 1. High collector-emitter voltage V q e o :7 0 V 2. High input-output isolation voltage (Viso:5,000Vrms) 3. D irectly connectable to TTL

op296hruz-reel

Abstract: 3183P
Contextual Info: Micropower RRIO Operational Amplifiers OP196/OP296/OP496 a FEATURES Rail-to-Rail Input and Output Swing Low Power: 60 ␮A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300 ␮V max High Open-Loop Gain: 500 V/mV

e120k

Abstract: OP07E circuit op07 for thermocouple type k
Contextual Info: Ultralow Offset Voltage Operational Amplifier OP07 Data Sheet PIN CONFIGURATION Low VOS: 75 V maximum Low VOS drift: 1.3 μV/°C maximum Ultrastable vs. time: 1.5 μV per month maximum Low noise: 0.6 μV p-p maximum Wide input voltage range: ±14 V typical

thyristors 5000 volt 3000 amperes

Contextual Info: POQJEREX INC m 1 m B OS X '"T-'ZS’rZl DE | THTMbSl 0DD310b fl | X FT1S O O B V Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. Q. Durand, BP107, 72003 LeMana, France (43) 72.7S.1S P tlQ S B C O f l t t O l S C R

SPT5230

Abstract: SPT5230SCT TT126N
Contextual Info: SPT5 2 3 0 fà S P T 10-BIT, 36 MWPS TRIPLE VIDEO DAC SIGNAL PROCESSING TECHNOLOGIES FEATURES • • • • • • • APPLICATIONS 10-Bit Triple Video Digital-to-Anaiog Converter Output Full-Scale Voltage +0.5 to +2.0 Vpp 36 MWPS Operation typ Low Power: 280 mW

VMEbus

Abstract: VME64 termination VME System Controller CA91C042 pci to vme SCV64 vme 3u board standards VMEbus and Universe I MD32 REQ64
Contextual Info: Openbus Interface Components - Universe User Manual 2 Functional Description 2.1 Architectural Overview This section introduces the general architecture of the Universe. This description makes frequent reference to the functional block diagram provided in Figure 2.1 on page 2-2. Notice