CY7C1021 Search Results

7C1021

Abstract: C2223 ge639 A12C CY7C1021
Contextual Info: CYPRESS Features • 12 ns • C M O S for optim um speed/pow er • L ow active power — 1020 mW • A vailable in 450 x 550-m il LCC • A utom atic power-down w hen deselected • E asy m em ory exp an sion w ith C Ej, CE 2, and O E options CY7C1021 64K x 16 Static RAM

CY7C1021V30

Abstract: CY7C1021V30-15BAI
Contextual Info: CY7C1021V30 64K x 16 Static RAM Features W riting to the device is a cco m plished by takin g C hip Enable CE and W rite Enable (W E) inputs LOW. If Byte Low Enable (BLE) is LOW, then da ta from I/O pins (l/O-i throu gh l/Og), is w ritten into the location specified on th e address pins (A0

CY7C1021BV33

Abstract: CY7C1021CV33 TSOP 48 thermal resistance
Contextual Info: CY7C1021CV33 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021CV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces

550mi

Contextual Info: 7c1021: March 31,1995 Revised: June 25,1996 CY7C1021 64K x 16 Static RAM ADVANCED INFORMATION Features Functional Description The CY7C1021 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW chip enable

Contextual Info: fax id: 1083 C 'i- PRELIMINARY CY7C1021V30 64K Features X 16 Static RAM Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BEE) is LOW, then data from I/O pins (l/Oi through l/0 8), is written into the location specified on the address pins (A0

Contextual Info: CY7C1021 P Yi. PX :V«*1 64K x 16 Static RAM BLE is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (A0 through A i5). If byte high enable (BHE) is LOW, then data from I/O pins (l/Og through I/0 1 6) is written into the location speci­

Contextual Info: CY7C1021CV33 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C ■ Pin and function compatible with CY7C1021CV33

Contextual Info: CY7C1021BNV33 64 K x 16 Static RAM 64 K × 16 Static RAM Features Functional Description The CY7C1021BNV33[1] is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power

CY7C1021BN-15VI

Abstract: CY7C1021BN
Contextual Info: CY7C1021BN CY7C10211BN 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

CY7C1021BN

Contextual Info: CY7C1021BN CY7C10211BN 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

CY7C1021CV33

Abstract: CY7C1021DV33 CY7C1021DV33-10VXI
Contextual Info: CY7C1021DV33 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021DV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces

Contextual Info: CY7C1021D PRELIMINARY 1-Mbit 64K x 16 Static RAM Features automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1021B • High speed — tAA = 10 ns • CMOS for optimum speed/power

Contextual Info: CY7C1021D 1-Mbit 64K x 16 Static RAM Features • Pin-and function-compatible with CY7C1021B • High speed — tAA = 10 ns • Low active power — ICC = 60 mA @ 10 ns • Low CMOS Standby Power • • • • • — ISB2 = 3 mA 2.0V Data Retention Automatic power-down when deselected

Contextual Info: CY7C1021D 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • Temperature Ranges: ❐ Industrial: –40 °C to 85 °C The CY7C1021D is a high performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an

CY7C1021V30

Abstract: CY7C1021V30-15BSI
Contextual Info: fax id: 1083 1CY 7C10 21 V ADVANCED INFORMATION CY7C1021V30 64K x 16 Static RAM Features • 3.0V operation 2.7V–3.3V • High speed — tAA = 15 ns • CMOS for optimum speed/power • Low active power (L version) — 462 mW (max.) • Low CMOS Standby Power (L version)

CY7C1021BV

Abstract: CY7C1021BV33
Contextual Info: CY7C1021BV33 CY7C1021BV33 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

CY7C1021BNV33

Abstract: CY7C1021BNV33L-15BAI CY7C1021BNV33L-15ZXI
Contextual Info: CY7C1021BNV33 64 K x 16 Static RAM 64 K × 16 Static RAM Features Functional Description The CY7C1021BNV33[1] is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power

CY7C1021B-15ZSXE

Abstract: CY7C1021B-12ZXC CY7C1021B
Contextual Info: CY7C1021B 1-Mbit 64K x 16 Static RAM Features automatic power-down feature that significantly reduces power consumption when deselected. • Temperature Ranges Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable

CY7C1021

Abstract: 7c1021
Contextual Info: 7c1021: March 31, 1995 Revised: June 25, 1996 ADVANCED INFORMATION CY7C1021 64K x 16 Static RAM Features D Functional Description The CY7C1021 is a highĆperformance CMOS static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW chip enable

CY7C1021CV33

Abstract: CY7C1021DV33 CY7C1021DV33-10VXI TSOP 66 Package thermal resistance
Contextual Info: CY7C1021DV33 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021DV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces

CY7C1021CV26

Contextual Info: CY7C1021CV26 1-Mbit 64K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption when deselected. • Temperature Range Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable

Contextual Info: CY7C10212CV33-12BAXET Alert me about changes to this product Status: In Production Datasheet Inventory Packaging/Ordering Quality and RoHS Technical Documents Related Products Support and Community CY7C10212CV33-12BAXET Automotive Qualified Y Min. Operating Voltage V

CY7C1021V33-15VI

Abstract: 1021V-10 CY7C1021V33L-15ZI CY7C1021V33 CY7C1021V CY7C1021V33-12ZC CY7C1021V33L15ZI CY7C1021V33L15BAC CY7C1021V33-12BAI
Contextual Info: fax id: 1077 CY7C1021V 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

Contextual Info: CY7C1021DV33 1-Mbit 64 K x 16 Static RAM Features Functional Description[1] • Temperature ranges ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ■ Pin-and function-compatible with CY7C1021CV33 The CY7C1021DV33 is a high-performance CMOS static