CMST3410 Search Results

V30010

Abstract: CMST3410 CMST7410 C07 MARKING CODE
Contextual Info: CMST3410 NPN CMST7410 PNP SURFACE MOUNT COMPLEMENTARY LOW VCE SAT SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST3410, CMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy

v30010

Abstract: marking C07 CMST7410 CMST3410
Contextual Info: CMST3410 NPN CMST7410 PNP SURFACE MOUNT SUPERminiTM COMPLEMENTARY SILICON LOW VCE SAT TRANSISTORS SOT-323 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Collector-Base Voltage VCBO Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST3410, CMST7410 types are complementary silicon

Contextual Info: CMST3410 NPN CMST7410 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT COMPLEMENTARY LOW VCE SAT SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST3410, CMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy

marking C07

Contextual Info: CMST3410 NPN CMST7410 PNP SURFACE MOUNT COMPLEMENTARY LOW VCE SAT SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST3410, CMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy

CMLT3410

Abstract: CMPT3410 CMST3410 CMUT3410 CP341V CXT3410
Contextual Info: PROCESS CP341V Small Signal Transistors NPN - Low VCE SAT Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 18 x 18 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization

a42e

Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
Contextual Info: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

transistor

Abstract: CMLT3410 CMPT3410 CMST3410 CMUT3410 CP341V chip die npn transistor
Contextual Info: PROCESS CP341V Small Signal Transistors NPN - Low VCE SAT Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 18 x 18 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization

CMLT3410

Abstract: CMPT3410 CMST3410 CMUT3410 CP341V CXT3410
Contextual Info: PROCESS CP341V Small Signal Transistors NPN - Low VCE SAT Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 18 x 18 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization