CMOD2004 Search Results

CMOD2004

Contextual Info: CMOD2004 SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOD2004 type is a high voltage silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a

Contextual Info: Central CMOD2004 Semiconductor Corp. SURFACE MOUNT ULTRAmini™ HIGH VOLTAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOD2004 type is a high voltage silicon switching diode man­ ufactured by the epitaxial planar process, epoxy molded in a ULTRAmini™ surface mount pack­

marking code diode 04

Abstract: CMOD2004 IR marking code
Contextual Info: Central CMOD2004 TM Semiconductor Corp. SURFACE MOUNT ULTRAmini HIGH VOLTAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOD2004 type is a high voltage silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini™ surface mount

CMOD2004

Contextual Info: Central CMOD2004 ULTRAmini SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOD2004 type is a high voltage silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini™ surface mount

by 028 200

Abstract: CMOD2004
Contextual Info: Central CMOD2004 Semiconductor Corp. SURFACE MOUNT ULTRAmini™ HIGH VOLTAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOD2004 type is a high voltage silicon switching diode man­ ufactured by the epitaxial planar process, epoxy molded in a ULTRAmini™ surface mount pack­

240V

Abstract: CMOD2004
Contextual Info: CMOD2004 SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOD2004 type is a high voltage silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a

CMOD2004

Abstract: CPD80V CMDD2004 1N3070 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
Contextual Info: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å

CMPZ4124

Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches

BAT 13003 D

Abstract: SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40
Contextual Info: index/Cross Reference Industry Part Number Central Part Number CMXD4448 1MN10 10BQ015 CMSH1-20ML CMR1U-02M 10MF2 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M CMR1-10M 1N6484 1S2835 CMPD2836

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

C 704 diode

Abstract: DIODE R3 1N3070 CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
Contextual Info: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å

transistor marking 44 sot23

Abstract: marking code diode 04 Diode SMA marking code PD MARKING CODE 028a sot 23 schottky diode 40a marking 1PC on SEMICONDUCTOR MARKING transistor C5D SOT323 MOSFET P hFE-100
Contextual Info: Discrete Semiconductor Sample Kit DC-DC Power Supply Applications Central Semiconductor sample kits provide designers with the discrete semiconductor devices ideal for their latest design challenges. The contents of this 3 part sample kit include examples of Central Semiconductor devices most

transistor T 523

Abstract: TRANSISTOR 3000W 400V SMD transistor 26 sot 23 npn 400V switching transistor sot-23 high gain PNP POWER TRANSISTOR "SOT23" Lighting Controllers SMD TRANSISTOR HP TRANSISTOR SMD HP 89 smc diodes motorola Transistors SOT89 smd
Contextual Info: SMD DATA BOOK 2001-2002 Ultra Low Leakage Diodes in SOT-23. Central is introducing a family of Energy Efficient Devices, EED's, for the segment of the electronics market that demands both small size and very low leakage currents, typically 100pA. Applications include laptops, cell

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E

CMOD2004

Abstract: 1N3070 CMDD2004 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V
Contextual Info: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

diode BY 028

Abstract: 631 DIODE SMD SMD Diode 631 SMD Switching diode SOD323 DIODE 33 25 SWITCHING DIODE ny smd transistor SOD-123 CMOD2004 BY 225 diode
Contextual Info: New Product Announcement Sample Devices Reduce your board space requirements with available Ultramini upon request. TM SOD-523 Actual Size Available technologies include: Switching Diode Schottky Diode High Voltage Switching Diode Ultra Low Leakage Switching Diode

1N3070

Abstract: DIODE 1N3070 CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V
Contextual Info: Central TM Semiconductor Corp. PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å

CMR1U-02M

Abstract: CMSD4448 CMSH3-40 CMPZ4124 CMSH3-100 CXTA27 TR em 328 SO3903 BST60 CMPZ4614
Contextual Info: index/Cross Reference Industry Part Number Central Part Number 1MN10 CMXD4448 10BQ015 CMSH1-20ML 10MF2 CMR1U-02M 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M 1N6484 CMR1-10M 1S2835 CMPD2836