BUV42 Search Results

Contextual Info: 3 7E SEMELAB LTD D • Û1331B7 00001Ô2 SEM ELAB JUL 0 6 1988 BUV42 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for applications requiring low saturation and high gain transistors for reduced load operation M EC H A N IC A L DATA Dim ensions in mm FEATURES

VCEO

Abstract: TO3 package
Contextual Info: ANALOG PRODUCTS T H O n S O N HIL ET S P A T I A U X PRODUCT 2TE D • TD2bô75 ÛG00Ü07 0 ■ o í S ” DESCRIPTION ü ü y « î se -> TO-3 modified package, VCEO sus = 60 v IC(sat) = 80 A ■ TO-3 package, v CEO(sus) = 200 V ICXsat) = 6 A ■ BUV42 TO-3 package,

BUV42

Contextual Info: BUV42 MECHANICAL DATA Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 2 FEATURES 22.23 (0.875) max. 1 1.52 (0.06) 3.43 (0.135) 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)

IC 7414

Contextual Info: BUV42A MECHANICAL DATA Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 2 FEATURES 22.23 (0.875) max. 1 1.52 (0.06) 3.43 (0.135) 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)

Contextual Info: f Z 7 SGS-THOMSON 7# ^ 5 BUV42A ¡LiO T@ iO S FAST SWITCHING POWER TRANSISTOR • FAST SWITCHING TIMES . LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERA­ TION TO-3 ABSOLUTE MAXIMUM RATINGS Symbol < V O o m VcEV

BUV42

Contextual Info: BUV42 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BUV42

Contextual Info: Inchange Semiconductor Product Specification BUV42 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Fast switching times ・Low collector saturation voltage APPLICATIONS ・For switching applications PINNING See Fig.2 PIN DESCRIPTION 1 Base

Contextual Info: • 7= ^ 231^0020737 0 ■ ¡" " P '3 3 “ì3 _ SGS-THOMSON ¡[ L ìO T q « S S G S-TH0MS0N BUV42A 30E ]> FAST SWITCHING POWER TRANSISTOR ■ FAST SWITCHING TIMES ■ LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERA­

Contextual Info: SEMELAB 37E D LTD JUL 0 6 1988 • Ô1331Ô7 DGODlfiM 5 SEMELAB BUV42A NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for applications requiring low saturation and high gain transistors for reduced load operation M E C H A N IC A L D A T A D im e nsion s in mm

Contextual Info: BUV42 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BUV42

Contextual Info: SavantIC Semiconductor Product Specification BUV42 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Fast switching times ·Low collector saturation voltage APPLICATIONS ·For switching applications PINNING See Fig.2 PIN DESCRIPTION 1 Base

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUV42 SILICON NPN SWITCHING TRANSISTOR FAST SWITCHING TIMES LOW SWITCHING LOSSES VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD

BUV42

Abstract: BB 555 pbas P003N
Contextual Info: BUV42 SILICON NPN SWITCHING TRANSISTOR n n n n SGS-THOMSON PREFERRED SALESTYPE FAST SWITCHING TIMES LOW SWITCHING LOSSES VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol

BUV42A

Contextual Info: BUV42A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: BUV42A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: BUV42 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: 4ÔE D 0 1 3 3 1 0 7 GGDD42D 7 b l H S N L B G137 chip family The G 137 chip family is an NPN bipolar multi-epitaxial planar transistor intended for applications requiring fast switching, low saturation power devices. SEMELAB LT]> 'î- 3 5 'O l • UP TO 35 AMPS

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

BUV42

Contextual Info: rrz ^ 7# SGS-THOMSON QjaniBiB@igugigir^ ieieg_ B U V 4 2 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . FAST SWITCHING TIMES . LOW SWITCHING LOSSES . VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION

mje520

Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
Contextual Info: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50

BUS11A

Abstract: BUV11 BUT91
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUR51 BUR51S BUR52 BUR52S BUS11 BUS11 CECC BUS11A BUS11A CECC BUS 12 BUS12A BUS 13 BUS13A BUSI 4 BUS14A BUS50 BUS51 BUS52 BUT13 BUT13P BUT70 BUT70MC BUT72 BUT90 BUT90C BUT91 BUT92 BUT92A BUT92AS

DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240