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    BUV27AF Search Results

    BUV27AF Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BUV27AF
    Philips Semiconductors Silicon Diffused Power Transistor Original PDF 148.75KB 6
    BUV27AF
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 33.24KB 1

    BUV27AF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUV27AF

    Abstract: BUV27F
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUV27F/AF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 120V(Min)- BUV27F 150V(Min)- BUV27AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high


    Original
    buv27f/afbuv27fbuv27afib27af PDF

    D0310

    Abstract: BUV27AF BUV27F L100 A10q 27af
    Contextual Info: _ 711QäBfci liU □ Cb D0310ñS T D P H I N I I PHILIPS INTERNATIONAL MSE ]> O BUV27F BUV27AF J l T -3 3 -0 7 SILICON DIFFUSED POWER TRANSISTORS H igh-voltage, high-speed, glass-passivated npn p o w er transistor in a S O T 1 8 6 envelope w ith electrically


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    d0310flsbuv27fbuv27afot186+6t-33-077z94453d0310l100a10q27af PDF

    V27AF

    Contextual Info: PHILIPS INTERNATIONAL mse: » 7 iiQasb 0031005 t b IPHIN BUV27F BUV27AF o SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators, motor control


    OCR Scan
    buv27fbuv27afot186711gflbh+30g310tdt-33-07v27af PDF

    Contextual Info: N AMER PHILIPS/DISCRETE ^ 5 3 ^ 3 1 D02fl4b4 TT3 I IAPX BUV27F BUV27AF b'lE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control


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    d02fl4b4buv27fbuv27afot186 PDF

    z9s21

    Abstract: BUV27AF BUV27F 27af BU100
    Contextual Info: N AMER PHILIPS/DISCRETE bTE » • bbSB^l DD2flMbM ‘ì'ìa HIAPX BUV27F BUV27AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistor in a S O T 1 8 6 envelope w ith electrically isolated m ounting base, intended fo r use in converters, inverters, switching regulators, m o to r control


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    bb53131buv27fbuv27afot186+3z9s2127afbu100 PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7bb112smd transistor code marking 2f 6na1211 lgcqy58bu705transistor 131-6 bj 026philips om350 PDF

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    lcd01bgy41bfw10 fet transistorcqy58+7germaniumrx101equivalent components fet bfw10bd643bf199283 to92 600a transistorzener phc PDF

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


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    ba220ba221ba223ba281+16ba314ba315ba316ba317ba318ba423fet bfw10kp101afet bfw11bdx38kpz20gcqy58abfw10 fetrpw100b0943of fet bfw11 PDF