BLY88 Search Results

BLY88A

Abstract: A41E BLY88 W1032 Paver Components
Contextual Info: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is

K 3699 transistor

Abstract: BLY88A 3699 npn pscw
Contextual Info: N AMER PHILIPS/DISCRETE 86D 01894 D ObE D • y ^53^31 00mi32 T j J BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is

ST 2222

Abstract: SOT-120 BLY88C
Contextual Info: PHILIPS INTERNATIONAL bSE D m 7110û2b DDb3Sôl 7T4 • PHIN II BLY88C V.H.F, POW ER TRANSISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is

BLY88C

Contextual Info: ^53*131 0 0 2 = ^ 2 SO? • APX BLY88U/01 b'lE » N AMER PHILIPS/DISCRETE J V V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is

Contextual Info: , U na. J.S.IIE.U Cs 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLY88C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLY88C is Designed for PACKAGE STYLE .380 4L STUD 12.5V, High Band Application.

BLY88A

Abstract: DATA TRANSISTOR 48UNF
Contextual Info: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 36.0 V NO. BLY88A Voltage, Collector to Emitter (VCE) 18.0 V TYPE NPN-RF Voltage, Emitter to Base (VEBO) 4.0 V empty empty Collector Current (IC) 2.5 A empty empty Base Current (IB)

BLY88C

Abstract: lyp 809 BLY88 SOT122A TRANSISTOR 2X5
Contextual Info: 711005b DQbBSÔT TIS « P H I N bSE D BLY88C/01 PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V . The transistor is resistance stabilized and is

BLY88

Contextual Info: N AMER PHILIPS/DISCRETE b'îE D • ^53^31 002=11^2 SO? ■ APX BLY88Ü/01 A V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is

BLY88C

Abstract: sot120 SOT-120
Contextual Info: N AMER PHILIPS /DI SCRETE b^E 5 • bb53<i31 0 0 2 ^ 0 4 430 H A P X BLY88C A V.H.F. POW ER TRANSISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is

RF POWER TRANSISTOR NPN vhf

Abstract: SLY88 texas rf power transistor BLY88T transistor b73
Contextual Info: BLY88T SIL IC O N NPN V H F POWER T R A N SIST O R 15 W at 13.5 Volts 175 M H z Minimum Gain — 7.5 dB mechanical specification absolute maximum ratings Tease = 25 °C C ollector-Base V o l t a g e . 3 6 V

ceramic trimmer capacitor

Abstract: transistor Common Base configuration philips Trimmer 60 pf BLY88C MSB056 15 w RF POWER TRANSISTOR NPN BLy88 list of transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLY88C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

Contextual Info: N AMER PHILIPS/DISCRETE 86D 0 1 8 9 4 ObE D • bb53T31 0 0 m i 3 2 f^ 3 Y -6 1 ’~ D BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V . The transistor is resistance stabilized and is

Contextual Info: N AMER PHILIPS/DISCRETE b'lE ]> bbS3cl31 DOETfciflM 430 BLY88C APX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is

BLY88C

Abstract: BLY88
Contextual Info: BLY88C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY88C is Designed for 12.5 V, High Band Application. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° A B C • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold Metalization System E E

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

tp2304

Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

BLY93A

Abstract: blw79 SOT123 Package BLW80 BLV11 BFS22A BLY94 BLY93C bly88
Contextual Info: 60 RF/Microwave Devices Bipolar RF Transmitting Transistors VHF 25175M H z Package Outline Type No. Load Power W @ 175MHz Power Gain (dB) @ 175MHz Supply Voltage (V) 0.7 1.5 3 9 8 8.4 9.4 7.4 7.5 7.5 7.5 7.5 1 2 2 4 4 4 4 8 8 8 10 15 15 15 15 25 25 28 30

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

MRF212

Abstract: b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC92 2SC94 2N5590 2S01614 2S01614 TN3252 BlY21 2N5861 ~~g~~~~ 25 30 ZTX649 B0505 B0505 B0505 B0505•1 B0505·1 B0505·5 B0507 ~g~g~ 35 40 B0507-1 B0507·5 B0509 B0509 B0509 B0509-1 B0509-5 2N5413

2SC636

Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642

2sd155

Abstract: SN232 BLY92 2SD154 BD109 BLY88 TIP27 MD17A X51c stc1201
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors kI B H H LINE No. TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT

BD264

Abstract: TIP27 BD109 S1050 BD263 BD264A BLY88 BLY92 S708 transistor BD400
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C