BLT53 Search Results

MCD198

Abstract: UHF TRANSISTOR philips transistor handbook BLT53 MCD194 transistor DATA REFERENCE handbook
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT53 UHF power transistor Product specification May 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

Philips 4312 020

Abstract: ferroxcube wideband hf choke transistor 4312 BLT53 philips Trimmer 60 pf philips capacitor 470 philips transistor UHF POWER TRANSISTOR UHF POWER transistor d 1991 ar
Contextual Info: 711002b Q O b E b m PHILIPS INTERNATIONAL UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability • Withstands full load mismatch. IPHIN 0G1 Product specification

BFG87

Abstract: BSF17 BSF17W Philips BFQ bipolar transistor blt81 driver circuit BGY46B BFE505 T119 Transistor BFQ43 bgy132
Contextual Info: Philips Sem iconductors Selection guide Selection list GENERAL For further information, refer to Data Handbook SC08a “R F Bipolar transistors", to Data Handbook SC09 “R F Power Modules”and to Data Handbook SC14 “R F Wideband Transistors, Video Transistors and Modules"

Philips TdA3619

Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
Contextual Info: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

FN1016

Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773

Contextual Info: <^£.m.i-C.and\Ji<Aoi ZPioducti., {Jnc. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212) 227-6005 FAX: (973) 376-8960 UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures

MCD195

Abstract: UHF POWER TRANSISTOR UHF POWER BLT53 MCD201
Contextual Info: bTE T> N AUER P H I L I P S / D I S C R E T E bbS3^3]i GQ2Ö744 Ö4fl M A P X tjciiiiwudUUCIOrS _Product speciricauon UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures

TRANSISTOR D196

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bhS3T31 0026744 flMfl M A P X . ' k j > jciiin;uiiuu cio specm cauon UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile

122d

Abstract: blw79 BLW80 BLX91 sot 122
Contextual Info: 61 RF/Microwave Devices Bipolar RF Transmitting Transistors UHF 400-512MHz Package Outline Type No. Load Power W> @ 470MHz Power Gain (dB @ 470MHz Supply Voltage (V) 1.2 8 10.5 6 7.5 7.5 0.4 1 2 2 2 2 2.5 4 5 7 10 10 15 20 30 45 60 10 12 6 9 6 9 10 8 10.5