BDX33C Search Results

Contextual Info: BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A

Box 34C

Abstract: BDX 34C pnp box 34b BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B
Contextual Info: BDX33, BDX33A, BDX33B, BDX33C BDX34, BDX34A, BDX34B, BDX34C f l . BDX33, A, B, C BDX34, A, B, C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlington for Linear Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER

BDX33

Abstract: BDX34C BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B T-801 k 30 transistor
Contextual Info: E lMOSPEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN PNP BDX33 BDX33A BDX33B BDX33C .designed for general-purpose amplifier and low speed switching applications FEATURES: * Coliector-Emitter Sustaining VoltageVcEopus, = 45 V Min - BDX33.BDX34

bdx34

Abstract: BDX34A
Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A

Contextual Info: SG S-TH O M SO N lü3D SI^@lliyiiSin^@lDCl BDX33A/33B/33C B DX34A/34 B/34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . DBX33B, BDX33C, BDX34B AND BDX34C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in

Contextual Info: • TqgqSB? D056M57 5 ■ " T '3 3>-Z.°\ f Z T SGS-THOMSON BDX33/33A/33B/33C ^ 7 # MÛi [i[Li©ir[B ô [MQ©S BDX34/34A/34B/34C 3GE D S G S-THOMSON HIGH GAIN GENERAL PURPOSE DESC RIPTIO N The BDX33, BDX33A, BDX33B and BDX33C are silicon epitaxial-base NPN transistors in monolithic

transistor BDX34 65

Contextual Info: BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D • 70 W at 25°C Case Temperature

BDX34C

Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A

BDX33C

Abstract: BDX34B BDX34C BDX33B BDX33
Contextual Info: BDX33B/33C BDX34B/34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They

BDX330

Abstract: BDX338 8DX33 BOX33B BOX33 TRANSISTOR BDX330 8DX33B B0X33 BOX33D bdx33d on
Contextual Info: B0X33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations United, UK_ • Designed lor Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D • 70 W at 25°C Case Temperature

BDX34C

Abstract: BDX34A BDX34 BDX34D BDX33 BDX33A BDX33B BDX33C BDX33D BDX34B
Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A

Contextual Info: BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented

Contextual Info: ON Semiconductor NPN Darlington Complementary Silicon Power Transistors BDX33B BDX33C* . . . designed for general purpose and low speed switching applications. PNP BDX34B * BDX34C • High DC Current Gain — • • • • hFE = 2500 typ.) at IC = 4.0

BDX34 equivalent

Abstract: bdx33c BDX33 BDX33B BDX34 BDX34B BDX34C BDX33A BDX34A
Contextual Info: NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO220 plastic package.

BDX33D equivalent

Abstract: BOX33B RCA-BDX33 BDX33c equivalent
Contextual Info: oï G E SOLID STATE 38 75081 G E SOLID-STATE Darlington Power Translators 0 1E ~ d^3ö7S0öi □□vpsflü 3 17280 Ö’ T - 3 3 - 2 L 7 BDX33, BDX33A, BDX33B, BDX33C, BDX33D File Number 693/ r 10-Ampere N-P-N Darlington Power Transistors « TERMINAL DESIGNATIONS

BDX 34C pnp

Abstract: BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C bdx 33c
Contextual Info: BDX33, BDX33A, BDX33B, BDX33C BDX34, BDX34A, BDX34B, BDX34C BDX33, A, B, C BDX34, A, B, C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlington for Linear Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR

BDX33CG

Abstract: BDX33BG BDX334 BDX33C Box 34C BDX334B BDX34CG BDX33B BDX34B BDX34C
Contextual Info: BDX33B, BDX33C* NPN BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features •ăHigh DC Current Gain - hFE = 2500 (typ.) at IC = 4.0

BDX33D

Abstract: BDX33 BDX34 BDX34C BDX34D BDX33A BDX33B BDX33C BDX34A BDX34B
Contextual Info: BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D ● 70 W at 25°C Case Temperature

BDX33C

Abstract: BDX33B BDX34B BDX34C
Contextual Info: BDX33B BDX33C BDX34B BDX34C  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They

33c marking

Abstract: BDX33BG box 34b BDX334B BDX33CG BDX334
Contextual Info: BDX33B, BDX33C NPN BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc

BDX34C

Abstract: 10 amp pnp darlington power transistors BDX33CG BDX33C BDX34CG BDX33B BDX34B marking 33c diode
Contextual Info: BDX33B, BDX33C* NPN BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0

BD320C

Abstract: BCX21 BD323 TlPl22 2N6383 BD320 BD321 BD322 BDX33 BDX33A
Contextual Info: DARLINGTONS POWER DARLINGTON SELECTOR CHART T0-220 10A BDX TO-39 2A TO-39 A Package •c o w ÜÔ >> NPN TO-3 10A PNP 40 - - - - 2N6383 45 BCX21 - BDX33 BDX34 - 60 BD320 BD321 BDX33A BDX34A BD322 BD323 TIP120 TIP125 - BDX33B BDX34B TIP121 TIP126 BDX33C BDX34C

DBX33B

Abstract: BDX34C BDX33A BDX33B BDX33C BDX34A BDX34B
Contextual Info: BDX33A/33B/33C BDX34A/34B/34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n DBX33B, BDX33C, BDX34B AND BDX34C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are

BDX33D equivalent

Abstract: B0X33B b0x33c box33 BDX33 BDX33A BDX33B BDX33C BDX33D BDX34
Contextual Info: oï G E SOLID STATE 3875081 G E SOLID-STATE Darlington Power Translators »Ë^Ba7S0ôi □□vpsflG 3 0 1E ~ D 1T 17280 '3 3 “2L7 File Number 6 9 3 / BDX33, BDX33A, BDX33B, BDX33C, BDX33D r 10-Ampere N-P-N Darlington Power Transistors « TERMINAL DESIGNATIONS