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    BDX33BG Search Results

    BDX33BG Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BDX33BG
    		On Semiconductor TRANS DARLINGTON NPN 80V 10A 3TO-220 Original PDF 71.45KB 6
    SF Impression Pixel

    BDX33BG Price and Stock

    onsemi

    onsemi BDX33BG

    TRANS NPN DARL 80V 10A TO-220
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    BDX33BG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BDX33C

    Contextual Info: BDX33B, BDX33C NPN BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc


    Original     		BDX33B, BDX33C BDX34B, BDX34C BDX334B BDX33C, BDX334C 33C/34B, BDX33C PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    BDX33CG

    Abstract: BDX33BG BDX334 BDX33C Box 34C BDX334B BDX34CG BDX33B BDX34B BDX34C
    Contextual Info: BDX33B, BDX33C* NPN BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features •ăHigh DC Current Gain - hFE = 2500 (typ.) at IC = 4.0


    Original     		BDX33B, BDX33C* BDX34B, BDX34C* BDX33C BDX34C BDX334B BDX33C, BDX334C BDX33CG BDX33BG BDX334 Box 34C BDX334B BDX34CG BDX33B BDX34B PDF

    33c marking

    Abstract: BDX33BG box 34b BDX334B BDX33CG BDX334
    Contextual Info: BDX33B, BDX33C NPN BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc


    Original     		BDX33B, BDX33C BDX34B, BDX34C BDX334B BDX33C, BDX334C 33C/34B, 33c marking BDX33BG box 34b BDX334B BDX33CG BDX334 PDF

    BDX34C

    Abstract: 10 amp pnp darlington power transistors BDX33CG BDX33C BDX34CG BDX33B BDX34B marking 33c diode
    Contextual Info: BDX33B, BDX33C* NPN BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0


    Original     		BDX33B, BDX33C* BDX34B, BDX34C* BDX33C BDX34C BDX334B BDX33C, BDX334C 10 amp pnp darlington power transistors BDX33CG BDX34CG BDX33B BDX34B marking 33c diode PDF