BDX33C
Contextual Info: BDX33B, BDX33C NPN BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc
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bdx33bbdx33cbdx34bbdx34c+3bdx334bbdx334c33c/34b
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BDX33CG
Abstract: BDX33BG BDX334 BDX33C Box 34C BDX334B BDX34CG BDX33B BDX34B BDX34C
Contextual Info: BDX33B, BDX33C* NPN BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features •ăHigh DC Current Gain - hFE = 2500 (typ.) at IC = 4.0
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bdx33bbdx33cbdx34bbdx34c+7bdx334bbdx334cbdx33cgbdx33bgbdx334box 34cbdx34cg
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33c marking
Abstract: BDX33BG box 34b BDX334B BDX33CG BDX334
Contextual Info: BDX33B, BDX33C NPN BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc
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bdx33bbdx33cbdx34bbdx34c+8bdx334bbdx334c33c/34b33c markingbdx33bgbox 34bbdx33cgbdx334
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BDX34C
Abstract: 10 amp pnp darlington power transistors BDX33CG BDX33C BDX34CG BDX33B BDX34B marking 33c diode
Contextual Info: BDX33B, BDX33C* NPN BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0
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bdx33bbdx33cbdx34bbdx34c+6bdx334bbdx334c10 amp pnp darlington power transistorsbdx33cgbdx34cgmarking 33c diode
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