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    BDT41BF Search Results

    BDT41BF Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BDT41BF
    Philips Semiconductors Silicon Epitaxial Power Transistors Original PDF 151KB 7
    BDT41BF
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 34.78KB 1
    BDT41BF
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 89.09KB 1

    BDT41BF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: N ANER PHILIPS/DISCRETE ESE D 1^53=131 0011721 T • BDT41F;41AF; BDT41BF;41CF T -33-0? SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT42F, BDT42AF, BDT42BF, and BDT42CF.


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    bdt41fbdt41bfot186bdt42f+3bdt42afbdt42bfbdt42cf PDF

    NPN Transistor VCEO 80V 100V

    Abstract: BDT41AF BDT41BF BDT41CF BDT41F
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT41F/AF/BF/CF DESCRIPTION •DC Current Gain -hFE = 30 Min @ IC= 0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF


    Original
    bdt41f/af/bf/cfbdt41fbdt41afbdt41bf+3bdt41cfbdt42f/af/bf/cfnpn transistor vceo 80v 100v PDF

    Contextual Info: II N AUER PHILIPS/DISCRETE 2SE D U bb53T31 □□1^737 3 • I J BDT42F; 42AF; BDT42BF; 42CF T-33-/7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. NPN complements are BDT41F, BDT41AF, BDT41BF, and BDT41CF.


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    bb53t31bdt42fbdt42bft-33-/7+5ot186bdt41fbdt41afbdt41bfbdt41cf PDF

    BDT42CF

    Abstract: BDT41BF BDT41F BDT42AF BDT42BF BDT42F 41F 134 41AF 2bdt
    Contextual Info: ^ 5 3 1 3 1 N AMER PHILIPS/DISCRETE H 5 E D 0 0 1 1 7 2 1 I I T BDT41F;41AF; BDT41BF;41CF r-3 ^ -0 ? SILICON EPITAXIAL POWER TRANSISTORS w in a «ÏOT186 e n v e lo p e with an electrically insulated NPN silicon epitaxial power transistors, each m a SOT186 enve p


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    bdt41fbdt41bfent186ot186+7bdt42afbdt42bfbdt42cfbdt42f41f 13441af2bdt PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7bb112smd transistor code marking 2f 6na1211 lgcqy58bu705transistor 131-6 bj 026philips om350 PDF

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    lcd01bgy41bfw10 fet transistorcqy58+7germaniumrx101equivalent components fet bfw10bd643bf199283 to92 600a transistorzener phc PDF

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


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    ba220ba221ba223ba281+16ba314ba315ba316ba317ba318ba423fet bfw10kp101afet bfw11bdx38kpz20gcqy58abfw10 fetrpw100b0943of fet bfw11 PDF