BDT41F Search Results

Contextual Info: N ANER PHILIPS/DISCRETE ESE D 1^53=131 0011721 T • BDT41F;41AF; BDT41BF;41CF T -33-0? SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT42F, BDT42AF, BDT42BF, and BDT42CF.

NPN Transistor VCEO 80V 100V

Abstract: BDT41AF BDT41BF BDT41CF BDT41F
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT41F/AF/BF/CF DESCRIPTION •DC Current Gain -hFE = 30 Min @ IC= 0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF

Contextual Info: II N AUER PHILIPS/DISCRETE 2SE D U bb53T31 □□1^737 3 • I J BDT42F; 42AF; BDT42BF; 42CF T-33-/7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. NPN complements are BDT41F, BDT41AF, BDT41BF, and BDT41CF.

BDT42CF

Abstract: BDT41BF BDT41F BDT42AF BDT42BF BDT42F 41F 134 41AF 2bdt
Contextual Info: ^ 5 3 1 3 1 N AMER PHILIPS/DISCRETE H 5 E D 0 0 1 1 7 2 1 I I T BDT41F;41AF; BDT41BF;41CF r-3 ^ -0 ? SILICON EPITAXIAL POWER TRANSISTORS w in a «ÏOT186 e n v e lo p e with an electrically insulated NPN silicon epitaxial power transistors, each m a SOT186 enve p