BD316 Search Results

BD317

Abstract: transistor npn 3-326 bd 317 BD318 BD-316 S357 BD317 TRANSISTOR AN-415 BD315 BD316
Contextual Info: motorola -c x s t r s / r sc .6367254 MOTOROLA f > SC CXSTRS/R F » TJt.3t.7aS4 DOÖOSTD 96D D T -S W -T 80590 f-33- ¿>3 NPN MOTOROLA BD315, BD316 SEMICONDUCTOR PNP TECHNICAL DATA BD317, BD318 C O M P L E M E N T A R Y SILICO N HIGH-POW ER T R A N S IS T O R S

transistor D318

Abstract: d318 transistor transistor D317 BD317 BD318 d318 80592
Contextual Info: motorola -c x s t r s / r sc .6367254 f MOTOROLA > » T Jt.3t.7aS 4 SC CXSTRS/R F 96D NPN MOTOROLA BD317, BD318 C O M PLEM ENTARY SILICO N HIGH-POWER TRANSISTO RS . designed for high' quality amplifiers operating up to 100 Watts into 4 ohm load with BD31S, BD316 and into 8 ohm load with BD317,

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

BD119

Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20

sd317

Abstract: Motorola 3-326 transistor SS3672 BD317 BD318 BD315 BD-316 H2525 transistor BP 109 S357
Contextual Info: motorola -c x s t r s / r sc »FJt.3t.7aSM fj 6 3 6 7 2 5 4 ; MOTOROLA SC CXS T RS / R F 96D 80590 NPN B D 315, B D 316 PNP BD317, BD318 M OTOROLA SEMICONDUCTOR TECHNICAL DATA C O M P L E M E N T A R Y SILICON HIGH-POW ER T R A N S IS T O R S . OGfi OSTD

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BD267

Contextual Info: SEMELAB LTD 37E I fll331fl? 0000040 3 • S d L B I - 3 3 - 6 1 ^ 1 i tj j ■type No. SST' Package V q e o . cont ^FE VCE/>C PD BD262B BD263A BD263B BD266 BD267 PNP NPN NPN PNP NPN T0126 T0126 T0126 T0220 T0220 100 100 120 60 60 4 4 4 8 8 750rain 750min

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

UAA2001

Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­

Germanium drift transistor

Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
Contextual Info: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of

BT061S

Abstract: BDX50 GENTRON STH16018 MRF435 BDY77
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD hFE fT ICBO Max ON) Min (Hz) (A) Max r (CE)sat Max (s) Max (Ohms) Tp.r Max (°C) Package Style D vices 20 Watts or More, (Cont'd) 5 10 BT061 BT061R BT061RS BT061S

Contextual Info: 6 7 DRAWI NG THIS MADE IN THI RD DRAWI NG ANGLE PROJECTION 15 U N P U B L I 5 H E D CO PYR IG H T 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED . ALL 5 2 3 4 IN T ER N A T IO N A L R IG H T S DI ST LOC 19 BD RESERVED. REV I 5 I0N5 77 LTR ZONE DE5CR[RTION

BD-316

Abstract: TMP76 bq2050 bq2050H ZVNL110A SCR SN 101 BENCHMARQ MICROELECTRONICS
Contextual Info: Preliminary bq2050H Lithium Ion Power Gauge IC Features Ø Ø Ø Conservative and repeatable measurement of available capacity in Lithium Ion rechargeable batteries 16-pin narrow SOIC Designed for battery pack integration - Ø Ø Ø 120µA typical operating current

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.