BD135 Search Results

BD140

Abstract: BD136 BD138 BD140 circuits bd138 hfe BD136 pin bd136 hfe BD136-16 BD140-10 BD140-16
Contextual Info: SavantIC Semiconductor Product Specification BD136 BD138 BD140 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·High current ·Complement to type BD135/137/139 APPLICATIONS ·Driver stages in high-fidelity amplifiers and television circuits

bd139

Abstract: BD135 BD137 bd139 140 BD139 circuits bd139 Complement BD139 silicon transistors BD135-10 BD135-16 BD139-10
Contextual Info: SavantIC Semiconductor Product Specification BD135 BD137 BD139 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High current ·Complement to type BD136/138/140 APPLICATIONS ·Driver stages in high-fidelity amplifiers and television circuits

Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 Rating Unit 45 V : BD137

transistor BD 246

Abstract: transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241
Contextual Info: BDI 36 PNP EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD135 • • • • • • • Driver Stages Active Convergence Control Circuits Switching Application Ptot * 6.5 Wat TC * 60 <>c hpE > 40 at lc = —150 mA Vce sat < 0.5 V at lc “ - 0.5 A

Contextual Info: BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25 OC Parameter Symbol Value BD135T BD137T BD139T Unit Collector Emitter Voltage

BD139

Abstract: BD139 N bd137 BD139-25 BD139 p BD135-BD137-BD139 bd135 N BD139 silicon transistors
Contextual Info: MCC BD135 BD137 BD139
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

transistor BD139 N

Abstract: bd139 Complement
Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol : BD135 VcB O Rating Unit 45 V : BD137 60 V

Contextual Info: r 7 z S G S - m O M S O BD135 BD137/BD139 N Ä T # [MO gfô l[L[iera®*S NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers

bd139

Abstract: M/triac bd139 bd135
Contextual Info: BD135 BD139 NPN SILICON TRANSISTORS • STMicraelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi

transistor BD139 N

Abstract: power transistor bd139 BD139 amplifier BD139 BD139 N TRANSISTOR NPN BD139 BD137-16 to126 case BD135-10 BD137-10
Contextual Info: DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS: TC=25°C unless otherwise noted

CDIL BD139

Abstract: CDIL BD137 bd139 140 BD135 CDIL BD137 parameters bd135 BD136 mw 137 BD137 BD139
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-126 SOT-32 Plastic Package BD135, 137, 139 BD135, BD137, BD139 NPN PLASTIC POWER TRANSISTORS Complementary BD136, 138, 140

philips power transistor bd139

Abstract: BD139 N bd139 application note BD139 philips BD135 philips BD140 npn power transistor bd139 TRANSISTOR BD139 TRANSISTOR NPN BD139 TRANSISTOR NPN BD140
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES

BD139 application

Abstract: BD139 N bd139 BD135 BD139 p of bd139 bd135 N BD139-25 BD136
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components HDWXUHV • • DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

bd139

Abstract: BD139 p BD135-BD137-BD139 bd135 N BD139 N BD139-25 BD136 bd137
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

BD135C

Contextual Info: SEMICONDUCTOR BD136 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : -1.5A ・Low Voltage (Max. : -45V) ・DC Current Gain : hFE=40Min. @IC=-0.15A ・Complementary to BD135. D C E F G H DIM

transistor BD 141

Abstract: BD139G bd139 140 BD139-25 BD139 NPN transistor Bd139 operation of BD 139 bd135 diagram
Contextual Info: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features

transistores

Abstract: AMPLIFICADOR PE210 PE108 oscilador amplificador de 400 w amplificador de RF PE109 amplificadores de audio amplificador transistor audio
Contextual Info: 50E D • ñ2315ím GODOODS T ■ T-2-cL-2A -SID MICROELETRÔNICA S/A Tipo Pol. Emcaps. Term 321 PC107 PNP T092 EBC PC108 PNP T092 EBC PC109 PE107 PE108 PE109 PE155 PE210 PE254 PE255 PE422 PE423 BD135 PNP NPN NPN

BD139 N

Abstract: BD135,BD137,BD139 BD139 bd135 N BD137 BD135-BD137-BD139 BD135 power transistor bd135 power transistor bd139 power transistor bd137
Contextual Info: BD135 BD137 BD139 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

BD139 N

Abstract: TRANSISTOR TC 137 BD135 LB 137 transistor power transistor bd135 BD139 BD139 NPN transistor bd135 N BD135 NPN transistor TRANSISTOR NPN BD139
Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector Base Voltage :B D 1 3 5 : BD137 : BD139 C ollector E m itter V o lta g e : BD135

BD139

Abstract: BD140 BD139 application BD140 application circuits circuits BD139 NPN transistor BD136 BD135 BD140 npn TRANSISTOR NPN BD140 of ic BD140
Contextual Info: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed

BD139 N

Abstract: BD139 bd137 BD135,BD137,BD139 bd135 N BD135 power transistor bd135 BD135-BD137-BD139 BD139 p BD139 silicon transistors
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

Contextual Info: r Z 7 S G S -T H O M S O N ^ 7 # 5MŒ HHi TT!FM0©S BD135 B D137-BD139 MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD135, BD137, BD139 are silicon epitaxial pla­ nar NPN transistors in Jedec TO-126 plastic package, designed for audio amplifiers and drivers

BD135

Abstract: BD135 BD137 BD139
Contextual Info: BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 2Collector 3Base CLASSIFICATION OF hFE 1

bd139 pin out

Abstract: BD139 application BD139 N BD139 bd135 n power transistor bd139 bd140
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components  HDWXUHV • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information)