BCX54 Search Results

BCX54

Abstract: bc 052 BCX54-10 BCX54-16
Contextual Info: BCX54 NPN Transistors Plastic-Encapsulate Transistors Elektronische Bauelemente RoHS Compliant Product 1 2 SOT-89 3 1.BASE 4.4~4.6 2.COLLECTOR 1.4~1.8 1.4~1.6 o W Tamb=25 C 0.5 1 A 45 V 2.3~2.6 0.36~0.56 0.9~1.1 Power dissipation PCM: Collector current ICM:

Marking BA SOT89

Abstract: sot-89 MARKING CODE BM BH Ra BM marking code BCX54 BCX54-10 BCX54-16 BCX55 SOT-89 marking BC BCX55-16
Contextual Info: BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high

MXTA92

Abstract: MXT3904 MXTA42 MXT3906 MXTA27 BCX51 BCX52 BCX53 MXTA44 BCX55
Contextual Info: SOT-89 Transistors SOT-89 Pinout: 1-Base, 2-C ollector, 3-Em itter General Purpose CASE 345-01 NPN «T hFE Device BCX56 BCX55 BCX54 MXT3904 BCX68 V b R CEO Min Max @ 1C (mA) Min (MHz) 80 60 45 40 20 40 40 40 100 85 160 160 250 300 375 150 150 150 10 500 50

Contextual Info: BEE D • 023b3SQ 0Glb712 3 H S I P BCX54 ■BCX 56 NPN Silicon AF Transistors SIEMENS/ SPCL-. SEMICONDS • • • • For A F driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: B C X 51-•• B C X 53 PNP

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BCX51,BCX52,BCX53 TRANSISTOR PNP 1. BASE FEATURES z NPN Complements to BCX54,BCX55,BCX56 z Low Voltage z High Current 2. COLLECTOR 3. EMITTER APPLICATIONS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BCX51,BCX52,BCX53 TRANSISTOR PNP 1. BASE FEATURES z NPN Complements to BCX54,BCX55,BCX56 z Low Voltage z High Current 2. COLLECTOR 3. EMITTER APPLICATIONS

BXC54-6

Abstract: BCX51 BCX52 BCX53 BCX54 BCX54-10 BCX54-16 BCX54-6 BCX55 BCX55-6
Contextual Info: bbSBTBl 0D15böb 3 AMER PHILIPS/DISCRETE BCX54 BCX55 BCX56 ObE D X 'X °i SILICON PLANAR EPITAXIAL T RA N SISTO R S Medium power n-p-n transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages

BQX54

Abstract: BCX56 BCX54 71A marking BCX51 BCX52 BCX53 BCX54-10 BCX54-16 BCX55
Contextual Info: • bhS3^31 0024tD'ì 1T3 HiAPX N AUER PHILIPS/DISCRETE BCX54 BCX55 BCX56 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS Medium power n-p-n transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages

BCX56

Abstract: BCX55-10-BG BCX54
Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996 BCX54 BCX55 BCX56 * O PAR TM ARKING DETAILS:BCX54 - BA BCX54-10 - BC BCX54 16 - BD BCX55 - BE BCX55-10 ~ BG BCX55-16 - BM BCX56 - BH BCX56-10 - BCX56-16 - BL BK C O M PLEM ENTAR Y TYPES:

Contextual Info: BCX51.BCX53 1 PNP Silicon AF Transistors 2 3 • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage 2 • Complementary types: BCX54.BCX56 NPN VPS05162 Type Marking Pin Configuration BCX51 AA 1=B 2=C

Marking BH SOT89

Contextual Info: BCX54 .- BCX56. NPN Silicon AF Transistors • For AF driver and output stages 1 2 • High collector current 3 2 • Low collctor-emitter saturation voltage • Complementary types: BCX51.BCX53 PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101

BCX56

Abstract: BCX53B bcx55 bcx54 BCX56E Bcx56-16 SOT89 bc BCX5616
Contextual Info: Not Recommended for New Design Please Use BCX5616 BCX54 BCX55 BCX56 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ✪ ISSUE 3 – FEBRUARY 1996 PARTMARKING DETAILS:BCX54 – BA BCX54-10 – BC BCX55 – BE BCX55-10 – BG BCX56 – BH BCX56-10 – BK C

bcx56-16

Abstract: BCX51 BCX53 BCX54 BCX54-16 BCX55 BCX55-16 BCX56 BCX56-10
Contextual Info: BCX54 .- BCX56. NPN Silicon AF Transistors • For AF driver and output stages 1 2 • High collector current 3 2 • Low collctor-emitter saturation voltage • Complementary types: BCX51.BCX53 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

sot89

Abstract: sot89 AE pnp SOT89 marking BCX51 BCX51-10 BCX51-16 BCX52 BCX52-10 BCX52-16 BCX53
Contextual Info: BCX51.BCX53 PNP Silicon AF Transistors • For AF driver and output stages 1 • High collector current 2 • Low collector-emitter saturation voltage 3 • Complementary types: BCX54.BCX56 NPN 2 VPS05162 Type Marking Pin Configuration BCX51 AA 1=B 2=C

BCX54

Abstract: BCX54-BA BCX54-10 BCX54-16
Contextual Info: BCX54 BCX54 SOT-89 TRANSISTOR NPN FEATURES Power dissipation 0.5 PCM: Collector current 1 ICM: Collector-base voltage 45 V(BR)CBO: 1. BASE 2. COLLECTOR W (Tamb=25℃) 1 2 3. EMITTER A 3 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Contextual Info: BCX54-10 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.63 h(FE) Max. Current gain.160

BCX56

Abstract: smd marking BH KEXIN BH SMD BCX54 bcx56 smd smd bh npn smd marking BA BCX56-16 BCX55 BH 16 smd
Contextual Info: Transistors SMD Type NPN Medium Power Transistors BCX54,BCX55,BCX56 Features High current max. 1 A . Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Symbol Rating Unit VCBO 45 V BCX55 60

SOT89 bc

Abstract: BCX51 BCX52 BCX54 BCX54-10 BCX55 BCX55-10 BCX56 BCX56-10 DSA003675
Contextual Info: I SOT89 NPN SILICON PLANAR MEDIUM ISSUE 3- POWER TRANSISTORS FEBRUARY 1996 PARTMARKING m DETAILS: - C - BA BCX54-10 - BC BCX54- 16 - BD BCX55 - BE BCX55-10 - BG BCX55- 16 - BM BCX56 - BH BCX56-10 - BK BCX5616 - BL BCX54 COMPLEMENTARY BCX54 - BCX54 BCX51 E

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors BCX54 SOT-89 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. BASE 0.5 2. COLLECTOR W (Tamb=25℃) 1 2 1 A

BCx56

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BCX54,BCX55,BCX56 TRANSISTOR NPN 1. BASE FEATURES z PNP Complements to BCX51,BCX52,BCX53 z Low Voltage z High Current 2. COLLECTOR 3. EMITTER APPLICATIONS

BCX56

Abstract: BCX54 BCX54-10 bc 104 npn transistor BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56-10 BCX56-16
Contextual Info: Central BCX54 BCX55 BCX56 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BCX54,BCX55,BCX56 TRANSISTOR NPN 1. BASE FEATURES z PNP Complements to BCX51,BCX52,BCX53 z Low Voltage z High Current 2. COLLECTOR 3. EMITTER APPLICATIONS

Contextual Info: BCX51 BCX52 BCX53 SOT89 PNP SILICON PLANAR M EDIU M POWER TRANSISTORS ISSU E 3 - FEBRUARY 1996_ O C O M P LEM EN T A R Y TYPE - BCX51 - BCX54 BC X52 - BCX55 BCX53 - BCX56 P A R T M A R K IN G D E T A I L S BCX51 BCX52 -A A -A E BCX53 -A H B C X 5 1 -1 0 -A C

bc 104 npn transistor

Abstract: Marking BH SOT89 Marking BA SOT89 MARKING BL SOT89 TRANSISTOR BC 187 sot-89 MARKING CODE Ba bc 187 npn transistor BCX56 on BC 187 TRANSISTOR SOT89 bc
Contextual Info: Central BCX54 BCX55 BCX56 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount