BCR08AS Search Results

BCR08AS-8

Contextual Info: MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR08AS-8 OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 3 3.9±0.3 2 2.5±0.1 0.8 MIN 1 1.5±0.1 0.5±0.07 0.4 +0.03 –0.05 0.4±0.07 1.5±0.1 1.5±0.1

Contextual Info: BCR08AS-12A Triac Low Power Use REJ03G0292-0400 Rev.4.00 Dec 10, 2008 Features • • • • • Non-Insulated Type • Planar Passivation Type • Completed Pb Free IT RMS : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 5 mA IFGT : 10 mA Outline RENESAS Package code: PLZZ0004CA-A

REJ03G0292-0100

Abstract: BCR08AS-12A BCR08AS-12 BCR08AS-12A-T13
Contextual Info: BCR08AS-12 Triac Low Power Use REJ03G0292-0100 Rev.1.00 Aug.20.2004 Features • • • • • Non-Insulated Type • Planar Passivation Type IT RMS : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGTⅢ : 5 mA IFGTⅢ : 10 mA Outline SOT-89 2, 4 4 1 2 3 3 1. 2. 3.

Contextual Info: Preliminary Datasheet BCR08AS-12A R07DS0134EJ0500 Previous: REJ03G0292-0400 Rev.5.00 Sep 15, 2010 Triac Low Power Use Features •        IT (RMS) : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 5 mA IFGT III : 10 mA Non-Insulated Type

REJ03G0292-0200

Abstract: BCR08AS-12 BCR08AS-12A-T14 PLZZ0004CA-A hybrid ic sc ka BCR08AS
Contextual Info: BCR08AS-12 Triac Low Power Use REJ03G0292-0200 Rev.2.00 Mar 22, 2007 Features • • • • • Non-Insulated Type • Planar Passivation Type • Completed Pb Free IT RMS : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGT : 5 mA IFGT : 10 mA Outline RENESAS Package code: PLZZ0004CA-A

triac conduction angle control ic

Abstract: BCR08AS-8 mitsubishi triac
Contextual Info: M ITSU B ISH I S E M IC O N D U C T O R TR IA C BCR08AS-8 LO W PO W ER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.5±0.1 1 . 6 ± 0.2 í I r 0.5±0.07 I 0.4±0.07 _-•J"1_l_ L— _ I“ 1.5±0.1 1.5±0.1

Contextual Info: Preliminary Datasheet BCR08AS-14A R07DS0970EJ0001 Rev.0.01 Nov 28, 2012 700V - 0.8A - Triac Low Power Use Features •     Non-Insulated Type  Planar Passivation Type  Surface Mounted Type IT RMS : 0.8 A VDRM : 700 V IFGTI, IRGTI, IRGTIII : 5 mA

Contextual Info: MITSUBISHI SEMICONDUCTOR TRIAC BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.5±0.1 1 . 6 ± 0.2 í I r 0.5 ± 0 .0 7 \— \ 0.4 ± 0 .0 7 -JIL—_ •*1 I “ 1.5±0.1 1.5±0.1 (B a c k side)

BCR08

Abstract: BCR08AS-12A BCR08AS-12A-T14 LZZ0004CB-A BCR08AS
Contextual Info: Preliminary Datasheet BCR08AS-12A R07DS0134EJ0500 Previous: REJ03G0292-0400 Rev.5.00 Sep 15, 2010 Triac Low Power Use Features •        IT (RMS) : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 5 mA IFGT III : 10 mA Non-Insulated Type

TRIAC 600V 1A SOT-89

Abstract: triac conduction angle control ic BCR08AS mitsubishi triac
Contextual Info: MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR08AS OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 3 3.9±0.3 2 2.5±0.1 0.8 MIN 1 1.5±0.1 0.5±0.07 0.4 +0.03 –0.05 0.4±0.07 1.5±0.1 1.5±0.1

bcr8dm

Contextual Info: POUEREX INC TL DE:j 7 a ,:14bEl □□DIADI D T - z ^ - /i" TRIACS I t rms l* t Te= 80° C 360° C onduction (Amps) fa r .8 T c = 4 8 eC ITSM (Amps) SO Hz 60 Hz Fuslng @ 8.3 ms (A2sec) R e jc (°C/W ) Jun ction Temp. Range (°C) Max Vgt (Volts) Max Vgd A ll

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

RJH60F7

Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
Contextual Info: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

BTA16-600B equivalent

Abstract: BTA16 800BW equivalent BT137 equivalent BT134 equivalent BTA08-600C equivalent BTA12-600B equivalent BTb12 equivalent TYN412 equivalent BTB16 800BW equivalent btb16 800cw equivalent
Contextual Info: CROSS REFERENCE THYRISTORS INDUSTRY STANDARD 16TTS08S 25TTS08S 2N6071 2N6071A 2N6073 2N6073A 2N6075 2N6075A 2N6342 2N6342A 2N6343 2N6343A 2N6344 2N6344A 2N6345 2N6345A 2N6346 2N6346A 2N6347 2N6347A 2N6348 2N6348A 2N6349 2N6349A 2N6394 2N6395 2N6396 2N6397

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

rjh60f5

Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
Contextual Info: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.

BCR08AS

Abstract: mitsubishi triac
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

BT136-600E equivalent

Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
Contextual Info: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.