BC869 Search Results

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC869 Features • • High current max. 1.0A Low voltage (max. 20V) PNP Medium Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO

Contextual Info: MCC TM Micro Commercial Components BC869 BC869-16 BC869-25
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High current max. 1.0A Low voltage (max. 20V) x Case Material: Molded Plastic.

Contextual Info: MCC TM Micro Commercial Components BC869 BC869-16 BC869-25
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features High current max. 1.0A Low voltage (max. 20V) Lead Free Finish/RoHS Compliant ("P" Suffix designates

Contextual Info: BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors Rev. 7 — 12 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview

cec "sot89"

Abstract: BC869 SOT89 chc CHC SOT89
Contextual Info: Not Recommended for New Design Please Use BCX6925 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC869 ISSUE 4 - JANUARY 1996 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE

BC869-16 SOT89 PHILIPS

Abstract: PHILIPS BC869 BC869 BC869-16 BC869-25
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC869 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 2003 Dec 02 2004 Nov 08 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BC869

marking chc

Contextual Info: MCC TM Micro Commercial Components BC869 BC869-16 BC869-25
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High current max. 1.0A Low voltage (max. 20V) x Case Material: Molded Plastic. UL Flammability

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC869 Features • • High current max. 1.0A Low voltage (max. 20V) PNP Medium Power Transistors Maximum Ratings

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors BC869 ＳＯＴ－８９ TRANSISTOR（PNP ） FEATURES Power dissipation PCM : 1.35 W （Tamb=25℃） Collector current ICM : -2 A Collector-base voltage V BR CBO : -32

transistor n53

Abstract: BC869-10
Contextual Info: bbS3^31 00244*13 N AUER PHILIPS/DISCRETE • APX BC869 b?E D y v SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic microminiature envelope, intended for low-voltage, high-current l.f. applications. BC868/BC869 is the matched complementary pair suitable fo r class-B audio output

Contextual Info: BC869 PNP Plastic-Encapsulate Transistor P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS ( TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO -32 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage

311 SOT89

Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 -OCTOBER 1995 FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B A U D IO O U TPUT STAGES UPTO 3W * HIGH hFE A N D LO W SATURATIO N VOLTAGE CO M PLEM ENTAR Y TYPE - BC869 PAR TM ARKING D E TA ILS -

BC868

Abstract: BC868-16 BC868-25 BC869 FMMT449
Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BC868 ISSUE 4 - OCTOBER 1995 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - C BC869 PARTMARKING DETAILS–

Contextual Info: BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors Rev. 7 — 12 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview

Contextual Info: I SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 •OCTOBER 1995 O_ BC868 m FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE- BC869

Schottky Diode SOT-89

Abstract: MBRL130 MBRL140 BAT54S SOT-23 CMR1U-02M SOT-89 MBRL120 MURS120 SMA BCX53 Rohm DPAK
Contextual Info: Competitive Part List Central Semiconductor Corp. 1. SOT-89 / SOT-223 Small Signal Transistors Our primary competition on the following devices is Philips, Siemens and Motorola. Competitor P/N BC868 BC869 BCP28 BCP29 BCP51, -10, -16 BCP52, -10, -16 BCP53, -10, -16

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors BC869 SOT-89 TRANSISTOR PNP FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. BASE 500 mW (Tamb=25℃) -2 A -32 V 2. COLLECTOR

BC869-16 SOT89 PHILIPS

Abstract: 13861 SOT89 marking cec BC869 BC869-16 BC869-25 SOT89 transistor marking 84
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BC869 PNP medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Dec 02 2004 Nov 08 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC869 FEATURES

transistor 103

Abstract: BC869 BC869-10 BC869-16 BC869-25 marking code CFC SOT
Contextual Info: 71 1 0 0 5 b DObfl4Sfl TT7 • P H I N BC869 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic microminiature envelope, intended for low-voltage, high-current l.f. applications. BC 868/BC869 is the matched complementary pair suitable for class-B audio output

Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - OCTOBER 1995 BC868 | m O_ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - BC869

cec "sot89"

Contextual Info: PART OBSOLETE - USE BCX6925 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC869 ISSUE 4 - JANUARY 1996 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE -

Contextual Info: BC868 J\ _ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a m icrominiature plastic package intended for low-voltage, high-current l.f. applications. BC868/BC869 is the matched complementary pair suitable fo r class-B audio output stages up to 3 W.

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Jul 16 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP medium power transistor BC869 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V).

Contextual Info: Transistors SMD Type Product specification BC869 Features High current. Three current gain selections. 1.2 W total power dissipation. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -32 V Collector-emitter voltage