bc327b
Abstract: BC327 ITT Intermetall bc328
Contextual Info: BC327, BC328 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suit able for AF-driver stages and iow-power output stages. These types are also available subdivided into three groups -16, -25, and -40, according to their DC current
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bc327bc328bc337bc338+2bc327bitt intermetall
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m p lif ie r T ra n s is to rs PNP Silicon B C 3 2 7 ,-1 6 ,-2 5 B C 3 2 8 ,-1 6 ,-2 5 COLLECTOR 1 3 EMITTER MAXIMUM RATINGS Rating Symbol BC327 BC328 Unit C ollector-Em itter Voltage VCEO -4 5 -2 5 Vdc C ollector-B ase Voltage
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BC327 pin out
Abstract: CBC327 BC327 BC328 BC327 motorola
Contextual Info: MOTOROLA Order this document by BC327/D SEMICONDUCTOR TECHNICAL DATA A m p lifie r T r a n s is to r s PNP Silicon B C 3 2 7 ,-1 6 ,-2 5 B C 3 2 8 ,-1 6 ,-2 5 COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating Symbol BC327 BC328 Unit C o lle c to r-E m itte r Voltage
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bc327/dbc327bc328o-226aa+3bc327 pin outcbc327bc327 motorola
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BC32b
Contextual Info: Rating Symbol BC327 BC328 Unit C o llector-E m itter Voltage VCEO -4 5 -2 5 Vdc Collector-Base Voltage v CBO -5 0 -3 0 Vdc Em itter-Base Voltage vebo - 5 .0 Vdc C o llector C u rrent — C o ntin uous >c -8 0 0 m A dc Total Device D issipation a Derate above 25°C
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C327a
Abstract: C337A
Contextual Info: BC327 BC327A BC328 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO -92 package, p rim a rily intended fo r use in d rive r and o u tp u t stages o f audio am plifiers. The BC327, BC 327A, BC328 are com plem entary to the BC337, B C 337A and BC338 respectively.
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bc327bc327abc328bc337+3bc338c327ac337a
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I3C327
Abstract: BC327 BC328 cbc327 103 ma BC327/BC328 transistor bc 102 BC337 BC338 BC 160
Contextual Info: BC327, BC328 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. These types are also available subdivided into three groups -1 6 , - 2 5 and - 4 0 , according to their DC current gain. As com
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bc327bc328bc337bc338+6i3c327cbc327103 mabc327/bc328transistor bc 102bc 160
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BC327
Abstract: BC327-16 BC327-25 BC327A BC328 BC328-16 BC337 BC337A BC338 bC328 philips
Contextual Info: h ^E J> m 1^53^31 GG27S24 2T0 N AMER PHILIPS/DISCRE TE IAPX B C 327 BC327A B C 328 I SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 envelopes, prim arily intended fo r use in driver and ou tput stages o f audio amplifiers. The BC327, BC327A, BC328 are complementary to the BC337, BC337A and BC338 respectively.
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gg27s24bc327bc327abc328+7bc337bc337abc338bc327-16bc327-25bc328-16bc328 philips
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TRANSISTOR pnp BC328
Abstract: BC327 BC328 BC337 pnp transistor
Contextual Info: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-ORIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC337/BC338 AB SO LU TE MAXIMUM RATINGS Ta = 25°C Characteristic Sym bol C ollector Em itter Voltage
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bc327/328bc337/bc338bc327bc328+4-10ma00250s7transistor pnp bc328bc337 pnp transistor
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C 32725
Abstract: BC327 C327 C327 C 327-25 C327 PNP BC327B c328 bc328c
Contextual Info: BC327,-16,-25 BC328,-16,-25 MAXIMUM RATINGS Rating S ym bol BC 327 VCEO -4 5 C o lle c to r-B a s e V o lta g e VCBO - 50 E m itte r-B a s e V o lta g e V £B O - 5.0 V dc >C -8 0 0 m Adc PD 625 5.0 C o lle c to r-E m itte r V o lta g e C o lle c to r C u rre n t —
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bc327bc328o-226aac 32725+7bc327 c327c327c 327-25c327 pnpbc327bc328bc328c
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transistor c327 25
Abstract: BC327 C327
Contextual Info: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC337IBC338 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Collector Emitter Voltage
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bc327/328bc337ibc338bc327bc328+3gg25057transistor c327 25bc327 c327
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BC327
Abstract: BC328 BC337 BC338 C338 BC327-25
Contextual Info: Rating Symbol BC327 BC328 -2 5 Vdc -3 0 Vdc VcEO -4 5 Collector-Base Voltage v CBO -5 0 Emitter-Base Voltage Collector-Emitter Voltage Unit V ë BO -5 .0 Vdc Collector Current — Continuous 'c -8 0 0 mAdc Total Device Dissipation @ Ta = 25”C Derate above 25°C
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bc327bc328o-226aabc337+3bc338c338bc327-25
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bc327 pnp
Abstract: BC327
Contextual Info: BC327 PNP EPITAXIAL PLANAR TRANSISTOR Features KM h H Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation T B TO-92 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,
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bc327625mwmil-std-202ds21708+1bc327 pnp
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BC327-25 ph
Abstract: transistor BC327 BC337 PH BC337 BC327 NPN transistor bc327 application note
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification PNP general purpose transistor BC327 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V).
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bc327bc337115002/00/03/pp8bc327-25 ph+4transistor bc327bc337 phbc327 npn transistorbc327 application note
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BC337A
Contextual Info: D BC337 BC337A BC338 ^ 5 3 ^ 3 1 Q027530 5T4 H A P X N AUER PHILIPS/DISCRETE _ / V _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers.
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BC250A
Contextual Info: PNP TRANSISTORS ITT SEP1IC0ND/ INTERMET ALL 3ME D MbfiSTll QQQ5MM5 L, ISI 7 - 3 l - o i PN P Silico n Transistors with plastic package 10D3 according to DIN 41870 =»TO-92 . On special request, these transistors w ill also be produced with TO-18 pin configura
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BC337 ITT
Abstract: 8C338 BC337 BC337 leads pin configuration Bc337 bc338 complementary pin configuration Bc338
Contextual Info: BC337, BC338 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suit able for AF-driver stages and low power output stages. These types are also available subdivided into three groups -16, -25, and -40, according to their DC current
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bc337bc338bc327bc328+762pulsebc337 itt8c338bc337 leadspin configuration bc337bc338 complementarypin configuration bc338
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bc337-40 npn transistor
Abstract: BC337 bc338 complementary BC337A JA02 BC337-40 BC33840
Contextual Info: BC337 BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 package, prim arily intended fo r use in driver and ou tput stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.
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bc337bc337abc338bc327+7bc327abc328bc337-40 npn transistorbc338 complementaryja02bc337-40bc33840
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Contextual Info: TAIWAN LITON E L E C T R O N I C MTE » • 0035^5 0 0 0 4 0 7 b 5ÖÖ ■ TLIT LEAD MOUNTED TRANSISTORS 'T-v-zi NPN T R A N SIST O R S TO-92 PLASTIC C A SE 625 m W @ TL = 25°C 2mm FRO M C A SE C H A R A C T ER IST IC S @ Ta 25°C Type Number 2N3903 2N3904
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2n39032n39042n44002n4401+6pn2221pn2221apn2222pn2222abc327bc327-16
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IPS2222A
Abstract: IPS2907A IPS2907
Contextual Info: DIODES INC 32E D • 20407=13 00DG3bl 1 « D I I LEAD M OUNTED TRANSISTORS -r-z-7-.s NPN T R A N SIST O R S TO-92 PLASTIC C A S E 625 m W @ T l = 25°C 2mm FROM CASE VcEO Type Number Volts 2N3903 2N3904 2N4400 2N4401 IPS2221 IPS2221A IPS2222 IPS2222A 40
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MPSA08
Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number VCEO Volts hfE @ ^ ce/Ic V/mA Cqb @ Vcb max pF V Pin Diagram See Page 45 V/mA 4.0 5 10 — 20/10 — — 10 10 Fig. 1 Fig. 3 Fig. 1 20/20 20/10 10/20 8.0 10 5 5 Fig. 1 Fig. 1 Fig. 1 50/5 300 — 5/1
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transistors/to-922n41242n51722n5088+7pn2222a2n39042n4401mpsa05/itta05psa08/itta062n5551mpsa08
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8C337
Abstract: 8C327 8C337-16 3C337 3C327A BC337A sc337 BC328 BC337 BC338
Contextual Info: !< - BC337^ BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 variant envelopes, prim arily intended fo r use in driver and o u tp u t stages o f audio amplifiers. The 8C337, BC337A, BC338 are complementary to the 8C327, 3C 327A and BC328 respectively.
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bc337xcbc337abc3388c337+78c3273c327abc3288c337-163c337sc337bc337
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2n2907 TO-92
Abstract: BC337 hie hre hfe bc337 hie c237a C714B BC337 hoe 2N3702 NATIONAL SEMICONDUCTOR C2371 C2379 hie for bc337
Contextual Info: Process National Semiconductor 3 S o -(pS 2_ 63 PNP M edium Row ^ 12. ( 2 13 2 1 Uj- D ESC R IPT IO N 3.020 Process 63 is a non-overlay, double-diffused, si I epitaxial device. Complement to Process 19. A PPLIC A T IO N This device was designed for use as general pure
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2n29052n29072n44032n3702+16o-237tn2905t0-2372n3416t0-922n34172n2907 to-92bc337 hie hre hfebc337 hiec237ac714bbc337 hoe2n3702 national semiconductorc2371c2379hie for bc337
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KEYPAD 4X3
Abstract: SBL-1 mixer enamelled copper wire swg table RADCOM 7805 IC6 74LS47 jm09k keypad 4x3 encoder maplin KEYPAD 4X3 SWITCH G3JI water level indicator using pic microcontroller
Contextual Info: a AN-557 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • 781/329-4700 • World Wide Web Site: http://www.analog.com An Experimenter’s Project for Incorporating the AD9850 Complete-DDS Device as a Digital LO Function in an Amateur Radio Transceiver*
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an-557ad9850pic16c84e3732+10keypad 4x3sbl-1 mixerenamelled copper wire swg tableradcom 7805ic6 74ls47jm09kkeypad 4x3 encodermaplin keypad 4x3 switchg3jiwater level indicator using pic microcontroller
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KEYPAD 4x3
Abstract: enamelled copper wire swg table KEYPAD 4X3 SWITCH maplin KEYPAD 4X3 SWITCH jm09k keypad 4x3 encoder pin diagram of 74LS47 TTL IC CW 7805 IC6 74LS47 74LS47 pin configuration
Contextual Info: a AN-557 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • 781/329-4700 • World Wide Web Site: http://www.analog.com An Experimenter’s Project for Incorporating the AD9850 Complete-DDS Device as a Digital LO Function in an Amateur Radio Transceiver*
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an-557ad9850pic16c84e3732+10keypad 4x3enamelled copper wire swg tablekeypad 4x3 switchmaplin keypad 4x3 switchjm09kkeypad 4x3 encoderpin diagram of 74ls47 ttl iccw 7805ic6 74ls4774ls47 pin configuration
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