BC327-25 ITT Search Results

TRANSISTOR pnp BC328

Abstract: BC327 BC328 BC337 pnp transistor
Contextual Info: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-ORIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC337/BC338 AB SO LU TE MAXIMUM RATINGS Ta = 25°C Characteristic Sym bol C ollector Em itter Voltage

transistor c327 25

Abstract: BC327 C327
Contextual Info: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC337IBC338 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Collector Emitter Voltage

BC327

Abstract: BC307 BC328 BC338 BC337 pnp transistor
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Sym bol C ollector-E m itter Voltage

bc327b

Abstract: BC327 ITT Intermetall bc328
Contextual Info: BC327, BC328 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suit­ able for AF-driver stages and iow-power output stages. These types are also available subdivided into three groups -16, -25, and -40, according to their DC current

BC327

Abstract: BC328 BC337 BC338 C338 BC327-25
Contextual Info: Rating Symbol BC327 BC328 -2 5 Vdc -3 0 Vdc VcEO -4 5 Collector-Base Voltage v CBO -5 0 Emitter-Base Voltage Collector-Emitter Voltage Unit V ë BO -5 .0 Vdc Collector Current — Continuous 'c -8 0 0 mAdc Total Device Dissipation @ Ta = 25”C Derate above 25°C

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 338 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage

bc328c

Abstract: lt 328
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC337/BC 338 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m ltter Voltage

BC32b

Contextual Info: Rating Symbol BC327 BC328 Unit C o llector-E m itter Voltage VCEO -4 5 -2 5 Vdc Collector-Base Voltage v CBO -5 0 -3 0 Vdc Em itter-Base Voltage vebo - 5 .0 Vdc C o llector C u rrent — C o ntin uous >c -8 0 0 m A dc Total Device D issipation a Derate above 25°C

C 32725

Abstract: BC327 C327 C327 C 327-25 C327 PNP BC327B c328 bc328c
Contextual Info: BC327,-16,-25 BC328,-16,-25 MAXIMUM RATINGS Rating S ym bol BC 327 VCEO -4 5 C o lle c to r-B a s e V o lta g e VCBO - 50 E m itte r-B a s e V o lta g e V £B O - 5.0 V dc >C -8 0 0 m Adc PD 625 5.0 C o lle c to r-E m itte r V o lta g e C o lle c to r C u rre n t —

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m p lif ie r T ra n s is to rs PNP Silicon B C 3 2 7 ,-1 6 ,-2 5 B C 3 2 8 ,-1 6 ,-2 5 COLLECTOR 1 3 EMITTER MAXIMUM RATINGS Rating Symbol BC327 BC328 Unit C ollector-Em itter Voltage VCEO -4 5 -2 5 Vdc C ollector-B ase Voltage

BC327 pin out

Abstract: CBC327 BC327 BC328 BC327 motorola
Contextual Info: MOTOROLA Order this document by BC327/D SEMICONDUCTOR TECHNICAL DATA A m p lifie r T r a n s is to r s PNP Silicon B C 3 2 7 ,-1 6 ,-2 5 B C 3 2 8 ,-1 6 ,-2 5 COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating Symbol BC327 BC328 Unit C o lle c to r-E m itte r Voltage

BC337 pnp transistor

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA= 2 5 t C haracteristic Sym bol Collector-Em itter Voltage

C327a

Abstract: C337A
Contextual Info: BC327 BC327A BC328 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO -92 package, p rim a rily intended fo r use in d rive r and o u tp u t stages o f audio am plifiers. The BC327, BC 327A, BC328 are com plem entary to the BC337, B C 337A and BC338 respectively.

I3C327

Abstract: BC327 BC328 cbc327 103 ma BC327/BC328 transistor bc 102 BC337 BC338 BC 160
Contextual Info: BC327, BC328 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. These types are also available subdivided into three groups -1 6 , - 2 5 and - 4 0 , according to their DC current gain. As com ­

bc327 pnp

Abstract: BC327
Contextual Info: BC327 PNP EPITAXIAL PLANAR TRANSISTOR Features KM h H Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation T B TO-92 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,

bc327c

Contextual Info: BC327 BC327A BC328 FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC04 OR DATA SHEET SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 package, p rim a rily intended fo r use in d rive r and o u tp u t stages o f audio am plifiers.

BC327-25 ph

Abstract: transistor BC327 BC337 PH BC337 BC327 NPN transistor bc327 application note
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification PNP general purpose transistor BC327 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V).

BC337A

Contextual Info: D BC337 BC337A BC338 ^ 5 3 ^ 3 1 Q027530 5T4 H A P X N AUER PHILIPS/DISCRETE _ / V _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers.

BC338

Abstract: BC337A BC337 BC327 BC327A BC328 BC337-16 DDE7530 DDE7532
Contextual Info: b^E D • bL S3^131 DDE753D 5T4 BC337 BC337A BC338 IAPX N AflER P H I L I P S / D I S C R E T E SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic T O -92 envelopes, p rim a rily intended fo r use in d riv e r and o u tp u t stages o f a udio a m plifiers.

BC337A

Contextual Info: BC337 BC337A BC338 FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC04 OR DATA SHEET SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 package, prim arily intended fo r use in driver and ou tput stages o f audio amplifiers.

BC250A

Contextual Info: PNP TRANSISTORS ITT SEP1IC0ND/ INTERMET ALL 3ME D MbfiSTll QQQ5MM5 L, ISI 7 - 3 l - o i PN P Silico n Transistors with plastic package 10D3 according to DIN 41870 =»TO-92 . On special request, these transistors w ill also be produced with TO-18 pin configura­

BC337 ITT

Abstract: 8C338 BC337 BC337 leads pin configuration Bc337 bc338 complementary pin configuration Bc338
Contextual Info: BC337, BC338 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suit­ able for AF-driver stages and low power output stages. These types are also available subdivided into three groups -16, -25, and -40, according to their DC current

bc337-40 npn transistor

Abstract: BC337 bc338 complementary BC337A JA02 BC337-40 BC33840
Contextual Info: BC337 BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 package, prim arily intended fo r use in driver and ou tput stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.

8C337

Abstract: 8C327 8C337-16 3C337 3C327A BC337A sc337 BC328 BC337 BC338
Contextual Info: !< - BC337^ BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 variant envelopes, prim arily intended fo r use in driver and o u tp u t stages o f audio amplifiers. The 8C337, BC337A, BC338 are complementary to the 8C327, 3C 327A and BC328 respectively.