AT6021 Search Results

ct60

Abstract: symbol of varactor diode and equivalent circuit varactor diode notes "Tuning Varactor" varactor APPLICATION AT6021M JC500
Contextual Info: AT6021M SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 15 The ASI AT6021M is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship

AT6021

Contextual Info: AT6021 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: The AT6021 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship

AT-60500

Abstract: AT-01635 AT-21400 AT21400 AT-60586
Contextual Info: Silicon Bipolar Transistors Low Noise Transistors Typical Specifications at +25°C Case Temperature Part Number Test Freq. (GHz) NF0 (dB) PldB (dBm) I 21eI2 @ 1.0 GHz (dB) Max. Usable Freq.M (GHz) w* (GHz) AT-41400 AT-60100 AT-60200 AT-60500 2.0 2.0 2.0

870-5513

Abstract: 870-5036 MS12ANG03 8700-812
Contextual Info: NKK Switches Rocker, Paddle and Slide Switches Subminiature Rocker and Paddle Switches Ñ NEW Ñ Lighted Snap-In Paddle and Rocker Switches MLW Series Features: .902" behind panel, front panel relampable, isolated lamp circuit, UL recognition, and epoxy sealed

Contextual Info: HEWLETT-PACKARD/ CHPNTS t.lE D WM 4447534 1 44 577 □DD‘Ö Surface Mount, Low Current Silicon Bipolar Transistor Technical Data AT-60111 AT-60211 Features • Low C u rrent O peration AT-60111: 0.4 mA at 3 V AT-60211: 0.8 mA at 3 V • Low Noise Figure

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

AT-60211-TR1

Abstract: AT-60211 Hewlett-Packard transistor microwave 821 AT-60111-TR1 AT-60111-TR2 AT-60211-TR2
Contextual Info: H E W L E T T - P A C K A R D / C M PN TS tlE D • MM H7 53M □ □ □ ‘^844 S77 H I H P A Surface Mount, Low Current Silicon Bipolar Transistor Technical Data AT-60111 AT-60211 Features • L o w C u r r e n t O p e r a tio n AT-60111: 0.4 mA a t 3 V

24 volt rocker switch

Abstract: LW3129 "Rocker Switch" DPDT INDEPENDENT illuminated neon E44145
Contextual Info: STANDARD SIZE/DUAL LAMPS/SNAP-IN MOUNTED 5 //- DISTINCTIVE FEATURES Each half of the rocker face is distinctly illuminated due to partitioned rocker construction and dual lamps. Selection of colored rocker filters and lamp covers provides numerous lighting combinations.

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

AT6018

Abstract: AT9000 at9000A AT6006 impatt AT9003 AT3002 AT3000 Gunn Diode 72 GHz AT6001
Contextual Info: ABRUPT TUNING VARACTORS ASI, AT series of Abrupt PN-Junction Tuning Varactors utilize the lowest resistance & highest Q characteristics of optimized tuning circuit performance. Applications include both narrow and wideband frequency tuning through 12GHz. These devices

Contextual Info: W hp% H E W LE T T mL'KM PA C K A R D Surface Mount, Low Current Silicon Bipolar Transistor Technical Data AT-60111 AT-60211 Features • Low Current Operation AT-60111: 0.4 mA at 3 V AT-60211: 0.8 mA at 3 V • Low Noise Figure AT-60111:1.4 dB at 1 GHz AT-60211: 1.5 dB at 1 GHz