APT5540BN Search Results

6040BN

Abstract: apt6040bn APT5540BN mc 668 L
Contextual Info: O A d v a n ced P o w er Te c h n o l o g y D APT6040BN APT5540BN APT6045BN APT5545BN Ô S ÜB WER MOS IV55 600V 550V 600V 550V 18.0A 18.0A 17.0A 17.0A 0.40U 0.400 0.451] 0.45!. 2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.

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Contextual Info: A dvanced R o w er Te c h n o l o g y • O D APT6040BN APT5540BN APT6045BN APT5545BN O s POWER MOS IVe 600V 550V 600V 550V 18.0A 18.0A 17.0A 17.0A 0.40Í2 0.40Q 0.45Q 0.45Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: APT5540BN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)550 V(BR)GSS (V)30 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)310 Minimum Operating Temp (øC)

Contextual Info: A dvanced P ow er Te c h n o l o g y O D APT6040BN APT5540BN APT6045BN APT5545BN O s POWER MOS IV' 600V 550V 600V 550V 18.0A 18.0A 17.0A 17.0A 0.40Q 0.40Í2 0.45ÍÍ 0.45Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER M0SFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

APT901RBN

Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN
Contextual Info: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN

APT5085BN

Abstract: APT501R1BN APT801R2BN APT5025BN APT1002R4BN
Contextual Info: ADVANCED APT PA R T NUM BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN APT8090BN APT801R2BN APT801R4BN APT802RBN APT802R4BN APT7575BN APT7S90BN APT751R2BN