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    l-band Phase Shifter

    Abstract: level shifter 3.3 cmos
    Contextual Info: Advance Information: AI1104 L-Band 6-Bit Digital Phase Shifter GaAs Monolithic Microwave IC P6…P1 V- V+ Control interface In Out P1 P2 P3 P4 P5 P6 UMS is developing a L-Band 1.2-1.4GHz monolithic 6 bit digital phase-shifter with a 0-360° range and offering a high phase accuracy. The typical RMS phase error is lower than 1.5°.


    Original     		ai1104an0020es-chp3010-99fai11041152+2l-band phase shifterlevel shifter 3.3 cmos PDF

    CR10

    Abstract: 4047N
    Contextual Info: M30L0T8000T0 M30L0T8000B0 256 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V core, 3V I/O Flash memory Feature summary • ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 2.2V to 3.6V for I/O Buffers – VPP = 9V for fast program (12V tolerant)


    Original     		m30l0t8000t0m30l0t8000b052mhzlfbga88+2cr104047n PDF

    CR10

    Abstract: J-STD-020B M58LR128GB M58LR128GT VFBGA56
    Contextual Info: M58LR128GT M58LR128GB 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		m58lr128gtm58lr128gb54mhzcr10+2j-std-020bvfbga56 PDF