ACT2708 Search Results

Contextual Info: S E M IC O N D U C T O R tm ACT2708 64 x 9 First-In, First-Out Memory General Description Features The ACT2708 is an expandable first-in, first-out memory or­ ganized as 64 words by 9 bits. An 85 MHz shift-in and 60 MHz shift-out typical data rate makes it ideal for high-speed

DIODE HF 20

Abstract: 74ACT2708 74ACT2708PC N28B
Contextual Info: Revised January 1999 ACT2708 64 x 9 First-In, First-Out Memory General Description Features The ACT2708 is an expandable first-in, first-out memory organized as 64 words by 9 bits. An 85 MHz shift-in and 60 MHz shift-out typical data rate makes it ideal for high-speed

N28B

Abstract: 74ACT2708 74ACT2708PC
Contextual Info: ACT2708 64 x 9 First-In, First-Out Memory General Description Features The ACT2708 is an expandable first-in, first-out memory organized as 64 words by 9 bits. An 85 MHz shift-in and 60 MHz shift-out typical data rate makes it ideal for high-speed applications. It uses a dual port RAM architecture with

transistor AC126

Abstract: equivalent transistor ac125 AC393 AC126 74AC393 AC365 AC682 d flip flop p6nk60z ACT03
Contextual Info: HC Portfolio Comparison PART # AC00 ACT00 AC01 AC02 ACT02 AC03 ACT03 AC04 ACT04 ACU04 AC05 ACT05 AC07 AC08 ACT08 AC09 AC10 ACT10 AC11 ACT11 AC14 ACT14 AC20 ACT20 AC32 ACT32 AC74 ACT74 AC86 ACT86 AC107 AC109 ACT109 AC112 ACT112 AC123 AC125 ACT125 AC126 ACT126

mr 044

Contextual Info: 2708 ¡^National Æm Semiconductor 74AC2708«ACT2708 64 x 9 First-In, First-Out Memory General Description The 'AC/’ACT2708 is an expandable first-in, first-out memo­ ry organized as 64 words by 9 bits. An 85 MHz shift-in and 60 MHz shift-out typical data rate makes it idea for high­