999 FAIRCHILD Search Results

175 WIV High Switching

Abstract: fdh-999 fdh900 fds01200 FDH999 FDLL900 FDLL999 FDR900
Contextual Info: FAIRCHILD SEMICONDUCTOR AM D E | 3 4 h cit 17 4 D057337 1 |~ FDH900/FDLL900 FDH999/999 FAIRCHILD • A Schlumberger Company High Speed Switching Diodes _ 7“- 03 -OÌ PACKAG ES FDH900 FDH999 FDLL900 FDLL999 • B V . ,4 5 V FD R 900 , 3 5 V (FD H 999)

100390PC

Abstract: 100390QC 100390QI 100390SC F100K M24B MS-011 MS-013 N24E V28A
Contextual Info: p e p te m H b N M 9 9 ° h1 Q Q ReVISed N OVem D6T 1Q 999 TM 100390 Low Power Single Supply Hex PECL-to-TTL Translator General Description Features The 100390 is a hex tra n sla tor for converting F100K logic levels to T T L logic levels. Unlike oth e r level translators, the

4aej

Abstract: 74LCX157 74LCX157M 74LCX157MTC 74LCX157SJ LCX157 M16A M16D MTC16 AD508
Contextual Info: R 3 vy is 1e 9d H9 M Re M a rc hh 11 QQQ 999 74LCX157 Low Voltage Quad 2-Input Multiplexer with 5V Tolerant Inputs General Description Features T h e L C X 1 5 7 is a h ig h -s p e e d q u a d 2 -in p u t m u ltip le x e r. F o u r b its o f d a ta fro m tw o s o u rc e s c a n be s e le c te d u s in g th e

CD 76 13 CP

Abstract: 74LVX174 74LVX174M 74LVX174MTC 74LVX174SJ LVX174 M16A M16D MTC16
Contextual Info: S E M i C O N D U C T O R 74LVX174 F A IR C H IL D p ay19H M R e v is e d M a rc hh 11QQQ 999 TM General Description Features T h e L V X 1 7 4 is a h ig h -s p e e d he x D flip -flo p . T h e d e v ic e is • In p u t v o lta g e le vel tra n s la tio n fro m 5 V to 3 V

74F192

Abstract: 74F192PC 74F192SJ M16D MS-001 N16E
Contextual Info: R H8 M RPe rviM is e9 d M a rc hh 11QQQ 999 74F192 Up/Down Clocks Decade Counter with Separate Up/Down General Description w ith o u t e x tra T h e 7 4 F 1 9 2 is a n u p /d o w n B C D d e c a d e 8 4 2 1 co u n te r. a s a p ro g ra m m a b le c o u n te r. B o th th e P a ra lle l L o a d (PL)

TDC1009

Abstract: C1009 A1009
Contextual Info: LMA1009/2009 □ FV IC E S 12 x 12-bit Multiplier-Accumulator NGORPORATFD DESCRIPTION FEATURES □ 20 ns Multiply-Accumulate Time □ Low Power CMOS Technology □ Replaces Fairchild TD C 1009/ TMC2009 □ Tw o's Complement or Unsigned Operands □ Accum ulator Performs Preload,

BA216

Abstract: fdh900 1N4009 1N459 1N459A 1N485B 1N486B 1N625 FDH300 FDH666
Contextual Info: FAIRCHILD D IODES DIODES COMPUTER DIODES BY ASCENDING trr (C o n t’d) GLASS PACKAGE Item D E V IC E NO. *rr ns M ax BV V M in 1 F D H 666 4.0 40 |r nA M ax vF Vr V @ V M ax @ 'F mA C pF M ax Pa ckag e No. 100 25 1.0 100 3.5 D O -35 4.0 • D O -35 4.0

diode EZD

Contextual Info: L O O iO L2330 Coordinate Transformer D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ Rectangular-to-Polar or Polar-toRectangular at 50 MHz □ 24-Bit Polar Phase Angle Accuracy □ Replaces Fairchild TMC2330A □ Available 100% Screened to MIL-STD-883, Class B

Contextual Info: LMU12 12 x 12-bit Parallel Multiplier D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ □ □ □ 20 ns Worst-Case Multiply Time Low Power CMOS Technology Replaces Fairchild MPY012H Two's Complement, Unsigned, or Mixed Operands □ Three-State Outputs

5A65

Abstract: JI 32 py013
Contextual Info: L2330 □ FV IC E S Coordinate Transformer NCOHPORATFD DESCRIPTION FEATURES □ Rectangular-to-Polar or Polar-toRectangular at 50 MHz □ 24-Bit Polar Phase Angle Accuracy □ Replaces Fairchild TMC2330A □ Available 100% Screened to MIL-STD-883, Class B

Contextual Info: S E M IC O N D U C TO R tm FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

on999

Abstract: FDN335N
Contextual Info: =M l C O N D U C T O R tm FDN335N N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

Contextual Info: S E M IC O N D U C T O R tm FDD6612A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state

Contextual Info: E M I C O N D U C T O R tm FDD6680A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state

FDT434P

Contextual Info: S E M IC O N D U C TO R tm FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state

Contextual Info: EMI C O N D U C T O R PRELIMINARY tm FDD5680 N-Channel, PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to m inimize the on-state

C2250

Contextual Info: LF2250 12 x 10-bit Matrix Multiplier □ F V IC E S IN C O R P O R A T E D FEATURES □ 50 M Hz Data and Computation Rate □ Nine M ultiplier Array w ith 12-bit Data and 10-bit Coefficient Inputs □ Separate 16-bit Cascade Input and Output Ports □ On-board Coefficient Storage

108D

Abstract: IRFP254
Contextual Info: IRFP254 A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V

Power MOSFET 50V 10A

Abstract: 108D IRFP254A
Contextual Info: IRFP254A Advanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V

DIODE S3V

Abstract: DIODE S3V 08 IRL520S DIODE S3V 50
Contextual Info: IRL520S A dvanced Power MOSFET FEATURES B V DSS — 1 0 0 V ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 9 -2 A lD = ♦ Improved Gate Charge 0 .2 2 Î1 ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

Contextual Info: =Ml C O N D U C TO R PRELIMINARY tm FDD6670A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level M O SFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state

Contextual Info: LF2242 5 ~ ~ ~ = 12/16-bit H alf-B and Interpolating/ D ecim ating Digital Filter ^ dev c=s ncdrporated DESCRIPTION FEATURES □ 40 MHz Clock Rate □ Passband 0 to 0.22:fs Ripple: ±0.02 dB □ Stopband (0.28/s to 0.5/s) Rejection: 59.4 dB □ User-Selectable 2:1 Decimation or

Contextual Info: 5 LF2242 12/16-bit Half-Band Interpolating/ Decimating Digital Filter devices incorporated DESCRIPTION FEATURES □ 40 M H z Clock Rate □ Passband 0 to 0.22:fs Ripple: ±0.02 dB □ Stopband (0.28/s to 0.5/s) Rejection: 59.4 dB □ User-Selectable 2:1 Decim ation or

Contextual Info: S E M IC O N D U C TO R tm FDC642P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state