9886 Search Results
9886 Result Highlights (2)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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10119886-101LF |
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AirMax VSe®, Backplane Connectors, 3-Pair, 54 -position, 2mm pitch, 6 column, 4 Walls, Right Angle Header, small press-fit, 2 side plating. | |||
10119886-111LF |
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AirMax VSe®, Backplane Connectors, Header, Right Angle, Press-Fit, 3 Pair, 6 Column, 54 Position, 2.00mm (0.079in) Pitch |
9886 Price and Stock
Dialight 5988610207FLED GREEN/RED CLEAR 1210 SMD |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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5988610207F | Reel | 12,000 | 3,000 |
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5988610207F | Reel | 12,000 | 3,000 |
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5988610207F | 2,103 |
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5988610207F | 153 |
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Dialight 5988660207FLED RED/YELLOW CLEAR 1210 SMD |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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5988660207F | Cut Tape | 8,412 | 1 |
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5988660207F | 13,342 |
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Dialight 5988610307FLED RGB CLEAR 1210 SMD |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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5988610307F | Digi-Reel | 6,348 | 1 |
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Lapp Group 1119886OLFLEX CLASIC 110 4G2,5 BK METER |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1119886 | 2,060 | 1 |
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Phoenix Contact 1419886CONTACT INSERT MODULE TYPE: RJ45 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1419886 | Bulk | 747 | 1 |
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1419886 | 259 |
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1419886 | Each | 82 | 1 |
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1419886 | 50 |
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1419886 | 82 |
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9886 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Instruction Sheet PRO- CRIMPER* III Hand Crimping Tool Assembly 90574- 1 with Die Assembly 90574- 2 408- 9886 29 OCT 09 Rev C PROPER USE GUIDELINES Cumulative Trauma Disorders can result from the prolonged use of manually powered hand tools. Hand tools are intended for occasional use and low volume |
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D 88069
Abstract: D-88069 SP11
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N-1601 D-88069 F-14200 B-9400 D 88069 SP11 | |
Contextual Info: S U R -g!“ 16DY Vishay Siliconix N-Channel 30-V D-S MOSFET New Product V M (VJ *BS (O N) lo (A l 0 .018 @ V GS = 10 V ± 9 .0 0 .028 & Vqs = 4.5 V ± 7 .3 30 D D D D ú p SO-8 0 - I& 1 Ô s N-Channel M O SFET A B S O L U T E M A X IM U M |
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23-Nov Si4416DY 23-Nov-98 | |
s13456dvContextual Info: SÌ3456DV Vishay Siliconix N-Channel 30-V D-S MOSFET Vd s M IntA ) Rds (om) 0.045 @ VGS = 10 V ±5,1 0.065 @ VQs - 4.5 V ±4.3 30 (1,2, 5, 6) D O TS O P -6 T o p V ie w Œ 1 6 Œ 2 5 n Œ 3 4 I] m | l— (3) G o— Ifa :i Ô (4) S N-Channel MOSFET A B S O L U T E M A X I M U M R A T IN G S |
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3456DV S-56945-- 23-Nov-98 s13456dv | |
IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
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TSFF5200Contextual Info: TSFF5200 Vishay Telefunken High Speed IR Emitting Diode in ø5 mm T–1¾ Package Description 94 8390 TSFF5200 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines the high speed of DH– |
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TSFF5200 TSFF5200 D-74025 29-Jun-99 | |
bd9886fv
Abstract: INVERTER bd9886fv BD9886 BD9884FV BD9884 LCD Inverter ccfl bit inverter BD9884FV TQFP64V TQFP100V SSOP-B28
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BD9884FV/ BD9885FV/ BD9886FV BU9794KV 200SEG 50SEG MCF18 MCF18 bd9886fv INVERTER bd9886fv BD9886 BD9884FV BD9884 LCD Inverter ccfl bit inverter BD9884FV TQFP64V TQFP100V SSOP-B28 | |
Contextual Info: TSFF6410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 870 nm • • • • High reliability |
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TSFF6410 2002/95/EC 2002/96/EC TSFF6410 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
TSFF5400Contextual Info: TSFF5400 Vishay Telefunken High Speed IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8390 TSFF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines the high speed of DH– |
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TSFF5400 TSFF5400 D-74025 29-Jun-99 | |
49145
Abstract: DW 3432 LQ 36 Q 4819 066-3 322873 43171 45048 il 72742 LW37
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QWHUQDO0520 49145 DW 3432 LQ 36 Q 4819 066-3 322873 43171 45048 il 72742 LW37 | |
transistor c5578
Abstract: BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor
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MCAT-2003 transistor c5578 BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor | |
Contextual Info: KB Plug-In Horsepower Resistor Selection Chart Motor Characteristics SCR Controls Plug-In Horsepower Resistor® Ordering Information KBIC, KBMM, KBPB, KBCC, KBWM, KBMD 90 – 130 VDC 180 VDC Motor Horsepower Range (KBWD, KBWS) Motor Current (apporx. amps DC) |
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A40999) | |
q351
Abstract: S1365 AGILENT 5971
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250052B 08A001 S1365 NW8002-CS01 q351 S1365 AGILENT 5971 | |
Contextual Info: TSHF5200 Vishay Telefunken ¾ High Speed IR Emitting Diode in ø 5 mm T–1 Package Description 94 8390 TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic |
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TSHF5200 TSHF5200 D-74025 02-Aug-99 | |
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heatsink
Abstract: 214-243-4321 3001 transistor diode 4151 Wakefield Engineering 4151 THERMALLOY Wakefield
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74146
Abstract: ks 407 4322 020 9717 53RD bc 303 transistor KS 5814 200G N2960 W232 17680-B
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412V-3/01 74146 ks 407 4322 020 9717 53RD bc 303 transistor KS 5814 200G N2960 W232 17680-B | |
Contextual Info: >>>7D;9C5;8<2=35294?=A2< K1.:561 2>8611">@DC141B181EB1-15 K1?=@24C1*:I6131!:89177:4:6>4H K1 D2A2>C665181FBJ1*C2AC8,@ |
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DC141 B181EB I6131! C28614 C665181FBJ 8C1A88D8CE171, B11311( K1E1062A1 B131CBB1 DA46B71 | |
Contextual Info: TSFF6210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • 94 8389 Package type: leaded Package form: T-1¾ Dimensions in mm = Ø 5 Peak wavelength: λp = 870 nm |
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TSFF6210 2002/95/EC 2002/96/EC TSFF6210 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
Contextual Info: TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 870 nm |
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TSFF5410 2002/95/EC 2002/96/EC TSFF5410 11-Mar-11 | |
Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
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TSFF5210 TSFF5210 2002/95/EC 2002/9s 08-Apr-05 | |
Contextual Info: CD54ACT139, CD74ACT139 DUAL 2-LINE TO 4-LINE DECODERS/DEMULTIPLEXERS SCHS337 – MARCH 2003 D D D D D D D D CD54ACT139 . . . F PACKAGE CD74ACT139 . . . E OR M PACKAGE TOP VIEW AC Types Feature 1.5-V to 5.5-V Operation and Balanced Noise Immunity at 30% of the |
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CD54ACT139, CD74ACT139 SCHS337 24-mA MIL-STD-883, CD54ACT139 CD74ACT139 scyd013 sdyu001x sgyc003d | |
tsff5200Contextual Info: TSFF5200 Vishay Telefunken ¾ High Speed IR Emitting Diode in ø5 mm T–1 Package Description 94 8390 TSFF5200 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines the high speed of DH– |
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TSFF5200 TSFF5200 D-74025 29-Jun-99 | |
enthalpyContextual Info: VORTEX FLOWMETERS MADE IN USA $ 1752 Basic Unit FV-520B-F-D, shown smaller than actual size ߜ Measures Steam, Gas, and Low Viscosity Liquids ߜ No Moving Parts and No Sensor Contact with Process Fluid ߜ Accuracy Up to 0.8% of Rate ߜ Intelligent Amplifier |
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FV-520B-F-D, FV-500B FV-500B-TBL FV-500B-TBL FV-500B-TBLCC FV-500B-RMK FV-500B-TBL) FV-520B, enthalpy | |
21N50QContextual Info: Advance Technical Information IXTH 21N50Q IXTT 21N50Q Power MOSFETs Q-Class VDSS = 500 V = 21 A ID25 RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR |
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21N50Q 21N50Q O-247 O-268 O-268 |