96N20P Search Results

Contextual Info: IXTQ 96N20P IXTT 96N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 96 A Ω = 24 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ TO-3P (IXTQ) Maximum Ratings

96N20

Abstract: 96N20P IXFT96N20P
Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 96N20P IXFT 96N20P IXFV 96N20P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 200 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ

96N20

Abstract: 96N20P 96N2
Contextual Info: IXTH 96N20P IXTQ 96N20P IXTT 96N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 96 A Ω = 24 mΩ RDS on N-Channel Enhancement Mode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: IXTH 96N20P IXTQ 96N20P IXTT 96N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 96 A Ω ≤ 24 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 200 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ

96N20P

Abstract: PLUS220SMD
Contextual Info: IXFH 96N20P IXFV 96N20P IXFV 96N20PS PolarHTTM Power MOSFET VDSS ID25 = 200 = 96 = 24 < 200 RDS on trr V A Ω mΩ ns N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

96N20P

Abstract: 96N20
Contextual Info: IXTH 96N20P IXTQ 96N20P IXTT 96N20P PolarHTTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 200 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 200 V VGSS VGSM Continous

Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 96N20P IXFT 96N20P IXFV 96N20P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 200 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 200

IXTD08N100P-1A

Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

STW20N60

Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal

DIODE 1334

Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205