9641 Search Results

IGBT 4000V ICM 400A

Abstract: IGBT 4000V
Contextual Info: PD - 96410B AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C VCES = 600V Low VCE ON Trench IGBT Technology Low switching losses IC(Nominal) = 75A

IRFS9640

Abstract: IRFS9641
Contextual Info: P-CHANNEL POWER MOSFETS IRFS9640/9641 FEATURES • • • • • • • Lower R d sio n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

h 9645

Abstract: Level Translators 9644 10125 ecl to ttl B1 9A 9645 fairchild Quad TTL to MOS Driver 8T26 11C44 11C58
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE RECEIVER ENABLE RECEIVER O UT A DRIVER IN C DRIVER IN C 155 9641/26S11 Vcc G ND ^ 14 RECEIVER □ 0UTD TJ IND “ I DRIVER 3 STROBE BUS D RECEIVER OUT D H DRIVER IND ^ STROBE ^ BUS C ^ 1 DRIVER i” 1 RECEIVER

8T26

Abstract: 8T28 EE25
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE RECEIVER ENABLE RECEIVER O UT A DRIVER IN C DRIVER IN C 155 9641/26S11 Vcc G ND ^ 14 RECEIVER □ 0UTD TJ IND “ I DRIVER 3 STROBE BUS D RECEIVER OUT D H DRIVER IND ^ STROBE ^ BUS C ^ 1 DRIVER i” 1 RECEIVER

Contextual Info: CAD DRAWING - NO MANUAL REVISIONS NOTES: 1, DESIGN AND INTERFACE PER I, D, S, -32, 2, FOR USE WITH ML7/151 0. 047 S/R DR EQUIVALENT CABLE, PALCH BG 22 GREAT HILL RD, , NAUGATUCK, B PER ECN 97 72 02/03/09 JEN A PER ECN 9641 11/19/08 JEN REV. DE SC R I P T I O N

Contextual Info: Part Details for P/N: 964114-1 Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Home Part Number Search Document Search Terminals and Splices MAG-MATE Terminals AMP 964114-1 Active Active Tyco Electronics P/N: 964114-1

Contextual Info: Part Details for P/N: 964106-1 Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Home Part Number Search Document Search Terminals and Splices MAG-MATE Terminals AMP 964106-1 Active Active Tyco Electronics P/N: 964106-1

Contextual Info: PD - 96415 AUTOMOTIVE GRADE AUIRFZ44V HEXFET Power MOSFET Features l l l l l l l l l D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax

HFA3102

Contextual Info: High-Frequency VGA Has Digital Control Sem iconductor A p p lic a tio n N o te A p r il 1998 A N 9641 .1 Introduction The VGA design comprises a three-transistor, long-tailed pair configuration comprising , Q2, and Q 3 . By changing the base voltage of Q 3 , the DAC IC, varies the emitter cur­

power mosfet IRF14

Abstract: IRF140 IRF143 IRF141 IRF142
Contextual Info: 7 96414 2 .SAMS UNG_S EM I CONDUCTOR 1- ' :V ñ DE § INC 98D 0 50 79 □ □ 0 5 D 7 C] T Dr-3 ? -'3 - N-CHANNEL POWER MOSFETS IRF140/141/142/143 FEA TU R ES LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

Mascot 9640

Abstract: D-88069 SP11 D 88069 mascot 9641
Contextual Info: 9640-9641 Max. 2,7 A CHARGERS FOR LEAD ACID AND LI-ION BATTERIES 9641 - medisinsk godkjent / medical approved EN 60601 • 3-trinns ladekontroll med timer • Plugg-inn enhet - switch mode • Ladestrøm uavhengig av nett- spenningsvariasjoner • Polvendingssikker

auirf3007

Abstract: AUIRF
Contextual Info: PD - 96417 AUTOMOTIVE GRADE AUIRF3007 HEXFET Power MOSFET Features l Advanced Planar Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant

M9642

Abstract: dm9640 9642d 9642
Contextual Info: 9640/26S10 • 9 641/26S 11 • 9642 QUAD GENERAL PURPOSE BUS TRANSCEIVERS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R IP T IO N The 9640, 9641 and 9642 are High-Speed Qua<} Bus Transceivers. Each driver output, which is capable of sinking 100 mA at 0.8 V, is con­

Contextual Info: PD - 96410 AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • Low VCE ON Trench IGBT Technology IC(Nominal) = 75A Low switching losses

k 2545 MOSFET

Abstract: AUIRF7734M2 AUIRF7734M2TR
Contextual Info: PD - 96413 AUIRF7734M2TR AUIRF7734M2TR1 AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET ‚ V BR DSS 40V RDS(on) typ. 3.8mΩ • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile

IRFTS9342TRPBF

Abstract: 8342T IRFTS9342 6342T TSOP6 Marking Code 17 IRF 840 MOSFET IRF n 30v IRF5803
Contextual Info: PD - 96411A IRFTS9342PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V D 1 6 40 mΩ D 2 5 D 66 mΩ G 3 4 S 12 nC -5.8 A RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET

Contextual Info: PD - 96415 AUTOMOTIVE GRADE AUIRFZ44V HEXFET Power MOSFET Features l l l l l l l l l D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax

3n70

Abstract: sem 304 SSM3N70 E5304
Contextual Info: 7 964142 S A M S U N G S E M I C O N D U C T O R . INC DE 1 7T b 4 1 4 E □□□5304 jCia 98D .053 0 4 i ^ 1^ ' 1 D N -C H A N Ñ E lT 0 ? ' " POWER MOSFETS SSM3N70 FEATURES / • • • • • • • • • Low R d s oii ' at high voltage Improved inductive ruggedness

Contextual Info: Part Details for P/N: 964106-2 Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Home Part Number Search Document Search Terminals and Splices MAG-MATE Terminals AMP 964106-2 Active Active Tyco Electronics P/N: 964106-2

Contextual Info: Part Details for P/N: 964114-2 Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Home Part Number Search Document Search Terminals and Splices MAG-MATE Terminals AMP 964114-2 Active Active Tyco Electronics P/N: 964114-2

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2502 Dec-96 9641 A6 CARSEM DM631365ABA1 1.2µ OX/NI EPROM 08 SOIC 150 STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C):

auirgp4066d1

Abstract: AUIRGP4066 AUP4066D1 auirgp4066d1-e
Contextual Info: PD - 96410 AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • • • VCES = 600V Low VCE ON Trench IGBT Technology IC(Nominal) = 75A Low switching losses

9642DC

Abstract: 9642 9641 PH 9640 9642DM 9642PC AM26S10 AM26S11 h 9649 MAX9640
Contextual Info: 9640/26S10 • 9641/26S 11 • 9642 QUAD GENERAL PURPOSE BUS TRANSCEIVERS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R IP T IO N The 9 6 4 0 , 9 641 a n d 9 6 4 2 a re H ig h -S p e e d Q u a ^ B u s T ra n sce ive rs. Each d riv e r o u tp u t, w h ic h is ca p a b le o f s in k in g 1 0 0 m A at 0 -8 V, is c o n ­

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TlbMlMS Ü01BM2Q 5^6 ■ SMGK P-CHANNEL POWER MOSFETS IRFS9640/9641 /9642/9643 FEATURES • • • • • • • TO-220F Lower RDs ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure