samsung
Abstract: 1RFU220 IPAK IRFU121 irfu310 IRFU010 IRFU012 IRFU020
Contextual Info: - f ± ft Vd s or ? Vd g t s £ tt « £ Vg s rTS fê Ta;:25°C Id * /CH Pd ft m. V g s th) Id s s Ig s s min * /CH (nA) Vg s (V) max Id Vd s (m a ) (V) Vd s = Vg s (V) (V) 4# te Id (oii) D s (o n ) Ciss g fs Coss Crss Vg s =0 (max) *typ Vg s ( 0 ) (V) Id
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18fs963zo-220irfs9s331rfs9640+101rfs96411rfs964samsung1rfu220ipakirfu121irfu310irfu010irfu012irfu020
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IRFS9620
Abstract: IRFS9522 SSS6N60 IRFS820
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL Continued BVdss(V) ID(onKA) RDS(onXQ) Part Number 2.20 2.50 4.00 4.50 7.00 8.00 4.000 3.000 2.000 1.500 1.100 0.850 IRFS823 IRFS821 IRFS833 IRFS831 IRFS843 IRFS841 500.00 2.20 2.50 4.00 4.50 7.00
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o-220irfs823irfs821irfs833+9irfs831irfs843irfs841irfs822irfs820irfs832irfs9620irfs9522sss6n60
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Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TlbMlMS Ü01BM2Q 5^6 ■ SMGK P-CHANNEL POWER MOSFETS IRFS9640/9641 /9642/9643 FEATURES • • • • • • • TO-220F Lower RDs ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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01bm2qirfs9640/9641o-220firfs9640+3irfs9641irfs9642irfs9643
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IRF9210
Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF
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2n39042n39062n44012n4403+162n50872n50882n55512n6515ksp06ksp10irf9210darlington npn 600v 8a transistorfet 10a 600vdarlington npn 600v 12a transistortransistor irf9640n-ch power mosfet to-92600v 12a to220fnpn transistor 600v 5a to-220transistor irf620ksh117-1
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IRFS1Z0
Abstract: IRFS1Z3 irfb220 irfu310 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212
Contextual Info: - SI € tt f « ± r Vd s £ Vgs *£ 1 T a = 2 5 tC Ig s s Pd Id Id s s Vg s th) or € n ft ft f Ds(on) Vd s = '14 lD(on) Ciss 9 fs Coss Crss * Vd g (V) (V) * /CH * /CH (A) (W) (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) (max) Id (mA) ft B ffi % Vg s =0
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1hfpg50o-247act0-247acrfu310+161rfu321rfu411irfu420irfu901irfu9012irfu9020irfs1z0irfs1z3irfb220irfu310251cirfr020irfr120irfr121irfr210irfr212
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9643
Abstract: 9642 FS9640
Contextual Info: P-CHANNEL POWER MOSFETS IRFS9640/9641 /9642Z9643 FEATURES • • • • • • * TO-220F Lower Rds on Improved inductive ruggedness Fast sw itching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
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irfs9640/9641/9642z9643o-220ffs9640/9641+8/9642zirfs9640irfs9641irfs9642irfs964396439642fs9640
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