9564 Search Results

Contextual Info: PD - 95645 IRGB8B60KPbF IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features C • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. •TO-220 is available in PbF as a Lead-Free.

IRGBC30K

Abstract: IRGBC30M marking code TR
Contextual Info: PD - 95641 IRG4BC30KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

Contextual Info: PD- 95649 IRFIBE30GPbF • Lead-Free www.irf.com 1 7/26/04 IRFIBE30GPbF 2 www.irf.com IRFIBE30GPbF www.irf.com 3 IRFIBE30GPbF 4 www.irf.com IRFIBE30GPbF www.irf.com 5 IRFIBE30GPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations • Low Stray Inductance

SL4B

Abstract: FD059
Contextual Info: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

ST 95640

Abstract: IRG4BC20W
Contextual Info: PD-95640 IRG4BC20W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter

Contextual Info: BRIGHT VIEW LED DIGIT DISPLAY ELECTRONICS CO.,LTD BVN-4564E2/9564E2 DESCRIPTION Dice Material : GaAsP/GaP Orange Light Color : Orange Color Lens Color : Milky Diffused Surface Color : Gray PACKAGE CONFIGURATION 8. 1 Tolerance : ± 0.25 mm 2 DIGIT 1 8 3 4 A

Contextual Info: BRIGHT VIEW LED DIGIT DISPLAY ELECTRONICS CO.,LTD BVN-4564G2/9564G2 DESCRIPTION Dice Material : GaP/GaP Green Light Color : Green Color Lens Color : Milky Diffused Surface Color : Gray PACKAGE CONFIGURATION 8. 1 Tolerance : ± 0.25 mm 2 DIGIT 1 8 3 4 A 18.8

Contextual Info: PD- 95648 IRFIBE20GPbF • Lead-Free www.irf.com 1 7/26/04 IRFIBE20GPbF 2 www.irf.com IRFIBE20GPbF www.irf.com 3 IRFIBE20GPbF 4 www.irf.com IRFIBE20GPbF www.irf.com 5 IRFIBE20GPbF 6 www.irf.com IRFIBE20GPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

ST 95640

Abstract: IRG4BC20W 95640 A/CHN 95640
Contextual Info: PD-95640 IRG4BC20W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter

Contextual Info: A ltflF * Catalog 1307612 Flexible Film Products Revised 7-01 Application Tooling for Flexible Film Contacts Hand Crimping Tool Assemblies Part Number 9 0 2 7 3 -5 — for MultiCrimp 408-9564 Extraction Tools ‘ Consult Tyco Electronics for specific dash nos.

Contextual Info: PD- 95649 IRFIBE30GPbF • Lead-Free Document Number: 91184 7/26/04 www.vishay.com 1 IRFIBE30GPbF Document Number: 91184 www.vishay.com 2 IRFIBE30GPbF Document Number: 91184 www.vishay.com 3 IRFIBE30GPbF Document Number: 91184 www.vishay.com 4 IRFIBE30GPbF

Contextual Info: PD - 95646 IRG4PC40KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency

Contextual Info: PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient.

035H

Abstract: IRFPE30
Contextual Info: PD - 95646 IRG4PC40KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency

400v 50A Transistor

Abstract: C-150 IRGB6B60K IRGS6B60K IRGSL6B60K
Contextual Info: PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient.

Contextual Info: PD- 95648 IRFIBE20GPbF • Lead-Free Document Number: 91183 7/26/04 www.vishay.com 1 IRFIBE20GPbF Document Number: 91183 www.vishay.com 2 IRFIBE20GPbF Document Number: 91183 www.vishay.com 3 IRFIBE20GPbF Document Number: 91183 www.vishay.com 4 IRFIBE20GPbF

Contextual Info: PD - 95641A IRG4BC30KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

AN-994

Abstract: C-150 HF03D060ACE
Contextual Info: PD - 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • VCES = 600V C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

035H

Abstract: IRFPE30 IRGPC50K IRGPC50M
Contextual Info: PD - 95647 IRG4PC50KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

035H

Abstract: IRFPE30
Contextual Info: PD - 95646 IRG4PC40KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency

Contextual Info: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

AN-994

Abstract: C-150 IRGS8B60K IRGSL8B60K
Contextual Info: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.

w241

Abstract: 999in
Contextual Info: PD- 95642 IRLI3803PbF • Lead-Free www.irf.com 1 7/26/04 IRLI3803PbF 2 www.irf.com IRLI3803PbF www.irf.com 3 IRLI3803PbF 4 www.irf.com IRLI3803PbF www.irf.com 5 IRLI3803PbF 6 www.irf.com IRLI3803PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

Contextual Info: PD-95640 IRG4BC20W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter