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Samtec Inc


Samtec Inc MTSW-149-07-F-D-059-RA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	MTSW-149-07-F-D-059-RA					1 - 10 $7.48 100 $5.40 1000 $3.44 10000 $2.68	Buy Now
Samtec Inc MTSW-103-06-F-D-059
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	MTSW-103-06-F-D-059					1 - 10 - 100 $0.46 1000 $0.34 10000 $0.18	Buy Now
Samtec Inc MTSW-110-08-F-D-059 .100 Variable Post Height Terminal Strip
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	MTSW-110-08-F-D-059					1 - 10 - 100 $1.48 1000 $1.03 10000 $0.56	Buy Now
Avnet Americas	MTSW-110-08-F-D-059	Bulk		1 Weeks, 5 Days	1	1 $1.46 10 $1.46 100 $1.46 1000 $0.92 10000 $0.50	Buy Now
Newark	MTSW-110-08-F-D-059	Bulk			1	1 $1.46 10 $1.43 100 $1.28 1000 $1.21 10000 $1.10	Buy Now
Sager	MTSW-110-08-F-D-059				1	1 $1.56 10 $1.56 100 $1.20 1000 $0.96 10000 $0.83	Buy Now
Samtec Inc MTSW-220-08-F-D-059 .100 Variable Post Height Terminal Strip
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	MTSW-220-08-F-D-059					1 - 10 $5.69 100 $4.42 1000 $3.33 10000 $2.06	Buy Now
Sager	MTSW-220-08-F-D-059					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc MTMM-107-04-F-D-059 VARIABLE POST HEIGHT HEAD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	MTMM-107-04-F-D-059					1 - 10 - 100 $1.44 1000 $1.00 10000 $0.62	Buy Now
Avnet Americas	MTMM-107-04-F-D-059	Bulk		1 Weeks, 2 Days	1	1 $1.39 10 $1.39 100 $1.39 1000 $0.90 10000 $0.40	Buy Now
Sager	MTMM-107-04-F-D-059				1	1 $1.45 10 $1.45 100 $1.15 1000 $0.94 10000 $0.82	Buy Now

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FD059 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FD059H06A5B Abstract: 31-2 MIL-HDBK-263 S1025 Contextual Info: I - 0512J rev. A FD059H06A5B FRED Die in Wafer Form z z 600V VF = 1.45V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage	Original	0512j fd059h06a5b 12-mar-07 31-2 +2mil-hdbk-263 s1025	PDF
FD059 Contextual Info: I - 0513J rev.B FD059U06A5B FRED Die in Wafer Form z z 600V VF = 1.25V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage	Original	0513j fd059u06a5b fd059	PDF
FD059U06A5B Abstract: fd059u06 MIL-HDBK-263 S1025 FD059 Contextual Info: I - 0513J rev.B FD059U06A5B FRED Die in Wafer Form z z 600V VF = 1.25V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage	Original	0513j fd059u06a5b 12-mar-07 fd059u06 +3mil-hdbk-263 s1025 fd059	PDF
Contextual Info: Bulletin I0513J 02/03 FD059U06A5. Fred Die in Wafer Form a 0.35 ± 0.01 14 ± 0.4 c NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS). 2. CONTROLLING DIMENSION (MILS): b d C A 40 (1.57) 3. DIMENSIONS AND TOLERANCES: a = 1.499 ± 0.01 (59.01 ± 0.4)	Original	i0513j fd059u06a5 s1025 o-220 +1059x059	PDF
C-150 Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 FD059H06A5 Contextual Info: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	4607a irgb4b60kd1 irgs4b60kd1 irgsl4b60kd1 +7o-220 o-262 an-994 c-150 irf1010 irf530s fd059h06a5	PDF
Contextual Info: PD - 94607B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	94607b irgb4b60kd1 irgs4b60kd1 irgsl4b60kd1 +3o-220 o-262 an-994	PDF
SL4B Abstract: FD059 Contextual Info: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	5643a irgb4b60kpbf irgs4b60kpbf irgsl4b60kpbf +5o-220 o-262 an-994 sl4b fd059	PDF
Contextual Info: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.	Original	5616a irgb4b60kd1pbf irgs4b60kd1pbf irgsl4b60kd1pbf +6o-220 irgb4b60kd1 irgs4b60kd1 o-262 irgsl4b60kd1 an-994	PDF
igbt 500V 22A Abstract: C-150 IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 diode 6-7 SL4B Contextual Info: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	4607a irgb4b60kd1 irgs4b60kd1 irgsl4b60kd1 +9o-220 o-262 an-994 igbt 500v 22a c-150 irf1010 irf530s diode 6-7 sl4b	PDF
AN-994 Abstract: C-150 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 Contextual Info: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.	Original	5616a irgb4b60kd1pbf irgs4b60kd1pbf irgsl4b60kd1pbf +7o-220 irgb4b60kd1 irgs4b60kd1 o-262 irgsl4b60kd1 an-994 c-150	PDF
Contextual Info: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C VCES = 600V Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.	Original	5616a irgb4b60kd1pbf irgs4b60kd1pbf irgsl4b60kd1pbf +6o-220 irgb4b60kd1 irgs4b60kd1 o-262 irgsl4b60kd1 an-994	PDF
Contextual Info: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	5643a irgb4b60kpbf irgs4b60kpbf irgsl4b60kpbf +3o-220 o-262 an-994	PDF
Contextual Info: PD - 94633 IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	irgb4b60k irgs4b60k irgsl4b60k o-220 +3o-262 an-994 fd059h06a5	PDF
C-150 Abstract: IRGS4B60K IRGSL4B60K Contextual Info: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.	Original	irgb4b60kpbf irgs4b60k irgsl4b60k o-220 +3o-262 an-994 c-150	PDF

Contextual Info: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.	Original	irgb4b60kpbf irgs4b60k irgsl4b60k o-220 +2o-262 an-994	PDF
Contextual Info: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	4607a irgb4b60kd1 irgs4b60kd1 irgsl4b60kd1 +3o-220 o-262 an-994	PDF
C-150 Abstract: IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K diode 68A VGE15V Contextual Info: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.	Original	4633a irgb4b60k irgs4b60k irgsl4b60k +8o-220 o-262 an-994 c-150 irf1010 irf530s diode 68a vge15v	PDF
C-150 Abstract: IRGS4B60K IRGSL4B60K Contextual Info: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.	Original	irgb4b60kpbf irgs4b60k irgsl4b60k o-220 +3o-262 an-994 c-150	PDF
C-150 Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 Contextual Info: PD - 94607 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	irgb4b60kd1 irgs4b60kd1 irgsl4b60kd1 o-220 +6o-262 an-994 fd059h06a5 c-150 irf1010 irf530s	PDF
Contextual Info: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.	Original	4633a irgb4b60k irgs4b60k irgsl4b60k +3o-220 o-262 an-994	PDF
AN-994 Abstract: C-150 IRGS4B60KD1 IRGSL4B60KD1 Contextual Info: PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	irgb4b60kd1pbf irgs4b60kd1 irgsl4b60kd1 o-220 +3o-262 an-994 c-150	PDF
AN-994 Abstract: C-150 igbt 400V 40A Contextual Info: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	5643a irgb4b60kpbf irgs4b60kpbf irgsl4b60kpbf +5o-220 o-262 an-994 c-150 igbt 400v 40a	PDF

FD059 Search Results

FD059 Price and Stock

Samtec Inc MTSW-149-07-F-D-059-RA

Samtec Inc MTSW-103-06-F-D-059

Samtec Inc MTSW-110-08-F-D-059

Samtec Inc MTSW-220-08-F-D-059

Samtec Inc MTMM-107-04-F-D-059

FD059 Datasheets Context Search

FD059H06A5B

FD059

FD059U06A5B

C-150

SL4B

igbt 500V 22A

AN-994

C-150

C-150

C-150

C-150

AN-994

AN-994