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    Littelfuse Inc TFR0805AFD0590NR

    TFR 0805 10PPM 0.125W 59 OHM0.05
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    DigiKey TFR0805AFD0590NR Tape & Reel 5,000
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    Mouser Electronics TFR0805AFD0590NR
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    RS TFR0805AFD0590NR Bulk 8 Weeks 5,000
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    Sager TFR0805AFD0590NR 5,000
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    Samtec Inc MTSW-110-08-F-D-059

    CONN HEADER VERT 20POS 2.54MM
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    DigiKey MTSW-110-08-F-D-059 Bulk 1
    • 1 $1.50
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    Avnet Americas MTSW-110-08-F-D-059 Bulk 1
    • 1 $1.50
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    • 1000 $0.92
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    Mouser Electronics MTSW-110-08-F-D-059
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    Newark MTSW-110-08-F-D-059 Bulk 1
    • 1 $1.68
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    Master Electronics MTSW-110-08-F-D-059
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    Sager MTSW-110-08-F-D-059 1
    • 1 $1.56
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    • 100 $1.20
    • 1000 $0.96
    • 10000 $0.83
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    Samtec Inc MTMM-107-04-F-D-059

    VARIABLE POST HEIGHT HEADER STRI
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    DigiKey MTMM-107-04-F-D-059 Bulk 1
    • 1 $1.39
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    Avnet Americas MTMM-107-04-F-D-059 Bulk 1 Weeks, 2 Days 1
    • 1 $1.39
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    Mouser Electronics MTMM-107-04-F-D-059
    • 1 $1.39
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    • 100 $1.31
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    Master Electronics MTMM-107-04-F-D-059
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    Sager MTMM-107-04-F-D-059 1
    • 1 $1.45
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    • 100 $1.15
    • 1000 $0.94
    • 10000 $0.82
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    Samtec Inc MTSW-105-07-F-D-059-RA

    CONN HEADER R/A 10POS 2.54MM
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    DigiKey MTSW-105-07-F-D-059-RA Bulk 1
    • 1 $0.83
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    Avnet Americas MTSW-105-07-F-D-059-RA Bulk 1
    • 1 $0.83
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    • 100 $0.83
    • 1000 $0.49
    • 10000 $0.32
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    Mouser Electronics MTSW-105-07-F-D-059-RA
    • 1 $0.83
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    • 100 $0.73
    • 1000 $0.69
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    Master Electronics MTSW-105-07-F-D-059-RA
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    Sager MTSW-105-07-F-D-059-RA 1
    • 1 $0.86
    • 10 $0.86
    • 100 $0.65
    • 1000 $0.51
    • 10000 $0.45
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    Littelfuse Inc TFR0805DFD0590NR

    Thin Film Resistors - SMD TFR 0805 10ppm 0.125W 59 Ohm0.5%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TFR0805DFD0590NR
    • 1 $0.56
    • 10 $0.35
    • 100 $0.22
    • 1000 $0.15
    • 10000 $0.11
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    RS TFR0805DFD0590NR Bulk 8 Weeks 5,000
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    • 10000 $0.17
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    Sager TFR0805DFD0590NR 5,000
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    FD059 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FD059H06A5B

    Abstract: 31-2 MIL-HDBK-263 S1025
    Contextual Info: I - 0512J rev. A FD059H06A5B FRED Die in Wafer Form z z 600V VF = 1.45V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage


    Original     		0512J FD059H06A5B 12-Mar-07 FD059H06A5B 31-2 MIL-HDBK-263 S1025 PDF

    FD059

    Contextual Info: I - 0513J rev.B FD059U06A5B FRED Die in Wafer Form z z 600V VF = 1.25V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage


    Original     		0513J FD059U06A5B FD059 PDF

    FD059U06A5B

    Abstract: fd059u06 MIL-HDBK-263 S1025 FD059
    Contextual Info: I - 0513J rev.B FD059U06A5B FRED Die in Wafer Form z z 600V VF = 1.25V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage


    Original     		0513J FD059U06A5B 12-Mar-07 FD059U06A5B fd059u06 MIL-HDBK-263 S1025 FD059 PDF

    Contextual Info: Bulletin I0513J 02/03 FD059U06A5. Fred Die in Wafer Form a 0.35 ± 0.01 14 ± 0.4 c NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS). 2. CONTROLLING DIMENSION (MILS): b d C A 40 (1.57) 3. DIMENSIONS AND TOLERANCES: a = 1.499 ± 0.01 (59.01 ± 0.4)


    Original     		I0513J FD059U06A5. S1025 O-220 059x059 PDF

    C-150

    Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 FD059H06A5
    Contextual Info: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1 FD059H06A5 PDF

    Contextual Info: PD - 94607B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		94607B IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. PDF

    SL4B

    Abstract: FD059
    Contextual Info: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 IRGB4B60KPbF O-262 AN-994. SL4B FD059 PDF

    Contextual Info: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.


    Original     		5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994. PDF

    igbt 500V 22A

    Abstract: C-150 IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 diode 6-7 SL4B
    Contextual Info: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. igbt 500V 22A C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1 diode 6-7 SL4B PDF

    AN-994

    Abstract: C-150 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
    Contextual Info: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.


    Original     		5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994. AN-994 C-150 IRGS4B60KD1 IRGSL4B60KD1 PDF

    Contextual Info: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C VCES = 600V Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.


    Original     		5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994. PDF

    Contextual Info: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 O-262 IRGS4B60KPbF AN-994. PDF

    Contextual Info: PD - 94633 IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		IRGB4B60K IRGS4B60K IRGSL4B60K O-220 IRGB4B60K IRGS4B60K O-262 AN-994. FD059H06A5. PDF

    C-150

    Abstract: IRGS4B60K IRGSL4B60K
    Contextual Info: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994. C-150 IRGS4B60K IRGSL4B60K PDF

    Contextual Info: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994. PDF

    Contextual Info: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. PDF

    C-150

    Abstract: IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K diode 68A VGE15V
    Contextual Info: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		4633A IRGB4B60K IRGS4B60K IRGSL4B60K O-220 O-262 AN-994. C-150 IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K diode 68A VGE15V PDF

    C-150

    Abstract: IRGS4B60K IRGSL4B60K
    Contextual Info: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994. C-150 IRGS4B60K IRGSL4B60K PDF

    C-150

    Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
    Contextual Info: PD - 94607 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. FD059H06A5. C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1 PDF

    Contextual Info: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		4633A IRGB4B60K IRGS4B60K IRGSL4B60K O-220 O-262 AN-994. PDF

    AN-994

    Abstract: C-150 IRGS4B60KD1 IRGSL4B60KD1
    Contextual Info: PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 O-220 O-220 IRGB4B60KD1PbF O-262 AN-994. AN-994 C-150 IRGS4B60KD1 IRGSL4B60KD1 PDF

    AN-994

    Abstract: C-150 igbt 400V 40A
    Contextual Info: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 O-262 IRGS4B60KPbF AN-994. AN-994 C-150 igbt 400V 40A PDF