951 PNP SOT223 Search Results

MARKING code 951

Contextual Info: SIEMENS BDP 951 NPN Silicon AF Power Transistors •For AF drivers and output stages >High collector current ■High current gain 1Low collector-emitter saturation voltage ■Complementary type: BDP952.BDP956 PNP Marking Ordering Code Pin Configuration

IC103

Abstract: MARKING code 951 BDP952 BDP956 Q62702-D1339 Q62702-D1341 Q62702-D1343
Contextual Info: BDP 951 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP952.BDP956 PNP Type Marking Ordering Code Pin Configuration

TRANSISTOR 955 E

Abstract: VPS05163 50/TRANSISTOR 955 E
Contextual Info: BDP 951 . BDP 955 NPN Silicon AF Power Transistor
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration VPS05163

TRANSISTOR 955 E

Abstract: VPS05163
Contextual Info: BDP 951 . BDP 955 NPN Silicon AF Power Transistor • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration

Contextual Info: BDP 952 . BDP 956 PNP Silicon AF Power Transistors • For AF driver and output stages 4 • High current gain • Low collector-emitter saturation voltage • Complementary types: BDP 951 . BDP 955 NPN 3 2 1 Pin Configuration VPS05163 Type Marking Package

VPS05163

Contextual Info: BDP 952 . BDP 956 PNP Silicon AF Power Transistors
For AF driver and output stages 4
High current gain
Low collector-emitter saturation voltage
Complementary types: BDP 951 . BDP 955 NPN 3 2 1 Pin Configuration VPS05163 Type Marking Package BDP 952

npn smd 2a

Abstract: smd 27E S0T223 T79 SMD BDS949 BDS951 BDS953 BDS955 IEC134 S0T-223
Contextual Info: BDS949/951/953/9S5 Datasheet statu* Product specification date of issue April 1991 NPN silicon epitaxial base power transistors PINNING-SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope

T79 SMD

Abstract: BDS949 BDS951 BDS953 BDS955 951 pnp sot223 t7 sot223
Contextual Info: Datasheet statu* Product specification date of issue April 1991 B D S 949/ 951/953/9S5 NPN silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a m iniature SMD envelope SOT223 intended for general

S95 SMD

Abstract: s954 s95A BDS950 BDS952 BDS954 BDS956 BDS95S 1S91
Contextual Info: Philips Components Datasheet status Product specification date of Issue April 1991 BDS950/952/954/956 PNP silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION base collector em itter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors

Contextual Info: SIEM ENS BDP 951 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage II o II o SOT-223 il O II CM SOT-223 3 =E o 1 =B LU 1 =B PD P 955 Q62702-D1343

C3317

Abstract: S95 SMD 1S91 BDS950 BDS952 BDS954 BDS956
Contextual Info: PHILIPS INTERNATIONAL SbE D • 7110fl2b D O M B n b 7TS « P H I N Philips Components Data sheet status Product specification date of issue April 1991 BDS950/952/954/956 P » - '7 PNP Silicon epitaxial base power transistors D ESCRIPTIO N PINNING - SOT223

Contextual Info: Philips Components D a tasheet status Product specification date of issue Apr* 1991 BDS949/951/953/9S5 NPN silicon epitaxial base power transistors PINNING -SO T223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope S0T223 intended for general

53Z Zetex

Abstract: X5T955 X5T851 ZX5T851G
Contextual Info: Advanced Products This section provides provisional short form data for the products to be released from the Zetex Miniature Package Power Solutions MPPS™ development plan described on page 4 of this brochure. Provisional short form data is also provided here for a

Contextual Info: Philips Components Data sheet status P r o d u c t s p e c ific a tio n date of issue A p ril 1 9 9 1 BDS949/9517953/955 NPN silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 NPN silicon epitaxial base transistors in a miniature SMD envelope

Contextual Info: Philips Com ponents BDS950/952/954/956 Datasheet status Product specification PNP silicon epitaxial base power transistors date of Issue April 1991 PINNING - SOT223 D ESCRIPTIO N PIN PN P silicon epitaxial base transistors in a m iniature S M D envelope SOT223 intended for general

BDP ST

Abstract: BDP951 BDP952 BDP953 BDP955 BDP956 VPS05163
Contextual Info: BDP951 . BDP955 NPN Silicon AF Power Transistor
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP952 . BDP956 PNP 2 1 Type Marking Pin Configuration

bdp 11

Abstract: BCP52-16 BDP951 BDP953 BDP954 E6327 VPS05163 BM sot223 marking code
Contextual Info: BDP951, BDP953 NPN Silicon AF Power Transistor • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary type: BDP954 PNP 2 1 Pin Configuration VPS05163 Type Marking

B 722 P

Abstract: BB 722 DC DC BB 722
Contextual Info: SIEMENS NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance BF 720 BF722 • Complementary types: BF 721/723 PNP

FZT957QTA

Abstract: FZT957
Contextual Info: A Product Line of Diodes Incorporated Green FZT957 300V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -300V IC = -1A high Continuous Collector Current ICM = -2A Peak Pulse Current

Contextual Info: A Product Line of Diodes Incorporated Green FZT957 300V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > -300V • • IC = -1A high Continuous Collector Current • • ICM = -2A Peak Pulse Current Case: SOT223 Case material: molded plastic. “Green” molding compound.

FZT951

Contextual Info: A Product Line of Diodes Incorporated FZT951 Green 60V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > -60V IC = -5A high Continuous Collector Current ICM = -15A Peak Pulse Current

Contextual Info: A Product Line of Diodes Incorporated FZT958 Green 400V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > -400V IC = -0.5A high Continuous Collector Current ICM = -1.5A Peak Pulse Current

X5T951

Contextual Info: A Product Line of Diodes Incorporated ZX5T951G Green 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -60V IC = -5.5A High Continuous Collector Current ICM = -15A Peak Pulse Current

55n60

Abstract: transistor Bc 949 transistor BC 56 BDP 71 AF-Transistor siemens sot223 Transistor bdp 71 4126P SOT-223 2907 BC 948
Contextual Info: Transistoren Transistors NF-Transistoren Transistoren für allgemeine und Schaltanwendungen AF-Transistors General Purpose and Switching Transistors Type N = NPN P = PNP Maximum Ratings Chara cteristics [Tk - 2>5°C J'CEO V mA ^CBQ Ptot / t mW MHz nA at VQB0 hfE