95.91 Search Results

Contextual Info: M TA -100 and M TA -156 Connectors and Headers; C ST -100 Connectors and Headers and S L -1 5 6 Connectors Catalog 82056 Revised 1-96 MTA-156 IDC Card Edge Connectors— Closed End and Feed-Thru Material and Finish H o u s in g — U L94V -0 rated, polyester,

kaba

Abstract: 149-188
Contextual Info: Ka-Band Power GaAs MESFET 61Alpha AFM04P2-000 Features • 21 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -4 0 GHz ■ 0 .25 jj.m Ti/Pt/Au Gates ■ Passivated Surface

CN-100 connector

Contextual Info: FEATURES * Accommodates .062 _+.008" PC board Consult factory for other board thicknesses * PPS or PCT insulator * Molded-in key available * High reliability/high cycle hairpin bellows contact * 1 amp current rating * 150 grams normal force minimum DUAL (D)

CM05X7R223K16AHF

Abstract: of IC 9290 an 17830 a MGA-43628 MARKING 17305 CM05X7R AVAGO PA LTE ic 8279 block diagram
Contextual Info: MGA-43528 High Linearity 1.93 – 1.995 GHz Power Amplifier Module Data Sheet Description Features Avago Technologies’ MGA-43528 is a fully matched power amplifier for use in the (1.93 – 1.995) GHz band. High linear output power at 5V is achieved through the

jammer slot machine

Contextual Info: ALM-3012 GNSS LNA-Filter Front-End Module with optional Differential Outputs Data Sheet Description Features Avago Technologies’ ALM-3012 is an ultra low-noise GNSS Global Navigation Satellite System front-end module that combines a low-noise amplifier (LNA) with

ERA-3SM

Abstract: ERA-3SM 99 1128B
Contextual Info: ERA-3SM Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: ERA-3SM Reference Data: RDF-1128B S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -25dBm, Icc = 35mA, Vd = 3.25V @Temperature = +25degC

1128B

Abstract: mmic era3
Contextual Info: ERA-3 Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: ERA-3 Reference Data: RDF-1128B S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -25dBm, Icc = 35mA, Vd = 3.25V @Temperature = +25degC

Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS PART NUMBER CODING R _ B _ _ DHA _ F NUMBER OF POSITIONS MOUNTING STYLE D= .250" EARS, FLUSH MOUNTING N= NO MOUNTING EARS A= SIDE MOUNTING WITH #4-40 THREADED INSERTS R= NO MOUNTING EARS, WITH BOARD LOCKS S= SIDE MOUNTING PLATING

LB 156

Abstract: D-10 LR19980 26-03-3041
Contextual Info: 3.96mm .156" Pitch KK Crimp Terminal Housing FEATURES AND SPECIFICATIONS Features and Benefits Electrical Voltage: 250V AC max. Current: Phosphor Bronze—7.0A max. Brass—5.0A max. Contact Resistance: 6mΩ max. Dielectric Withstanding Voltage: 1500V AC

Contextual Info: Prelim inary Data Sheet R e v i s i o n 1.1 IntegratorSeriesFPGAs: 4 0 M X a n d 4 2 MX Families Features • D e te rm in is tic , U ser-C ontrollable T im in g Via D ire ctT im e S oftw are Tools. • M X D iagnostics and Debug S upported b y S ilic o n E xplorer.

CFS0303-SB-0G0T

Abstract: TRANSISTOR BD 137-10 PB-CFS0303-SB-00B0 transistor 2440 bd 9473
Contextual Info: 0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package May 2006 - Rev 23-May-06 CFS0303-SB Features AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Dynamic Range Low Current and Voltage Bias Point 3V and 60 mA

Contextual Info: Mini-Circuits - Specification for Voltage Controlled Oscillator - ROS-EDR6473/1 Voltage Controlled Oscillator Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article.

92256

Abstract: 44750 7432 truth table 90087
Contextual Info: AlGaAs SPST Non-Reflective PIN Diode Switch MA4AGSW1A Rev 2.0 FEATURES • • • • Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz M/A-COM’s unique patent pending AlGaAs

Contextual Info: DRAFT FMA3008 DRAFT FMA3008 2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER Die: 2.35mmx1.78mm Product Description Features The FMA3008 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using the

4202 BD TRANSISTOR

Abstract: lg 8993 f 4556 TRANSISTOR BD 137-10 C 5478 transistor 329 9148 f 9582 dc bd 8050 TRANSISTOR QFN 5853
Contextual Info: CDQ0303-QS 500 MHz to 6000 MHz Dual, Ultra Low-Noise, High IP3 Amplifier Advanced Product Information May 2005 V1.0 1 of 18 Features ❏ Matched Pair of Transistors for Optimum Ballanced Amplifier Design ❏ AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT)

TRANSISTOR BD 137-10

Contextual Info: CFS0303-SB Advanced Product Information March 2004 V1.3 1 of 16 Features ❏ AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) ❏ High Dynamic Range ❏ Low Current and Voltage. ❏ Bias Point 3V and 60 mA ❏ 0.3 dB noise figure at 2 GHz

transistor power mx 614

Abstract: 40MX 42MX A40MX02 A40MX04 A42MX09 A42MX16 A42MX24 A42MX36 hp 2800 diode
Contextual Info: Preliminary Data Sheet Integrator Series FPGAs – 40MX and 42MX Families Features • Supported by Actel Designer Series development system with interfaces to popular design environments such as Cadence, Exemplar, IST, Mentor Graphics, Synopsys, Synplicity, and Viewlogic

MERA-7456

Contextual Info: Surface Mount MERA-7456+ MERA-7456 Dual Matched MMIC Amplifiers 50Ω High Dynamic Range DC to 1 GHz Features • Two matched amplifiers in one package • InGaP HBT IF and RF amplifier • frequency range, DC to 1GHz, usable to 4 GHz • high gain, 25.1 dB typ. at 100 MHz

AFM02N5-55

Contextual Info: Low Noise Packaged GaAs MESFET ED Alpha m i m u T iir in iiiiiiii I iiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiii ii iiir AFM02N5-55, AFM02N5-56 Features Drain Source • Low Noise Figure, 1.1 dB at 12 GHz ■ High Associated Gain, 8.0 dB at 12 GHz ■ High MAG, > 8.5 dB at 12 GHz

PT 8830

Contextual Info: Ka-Band Power GaAs MESFET AFM04P2-00 Features Chip Layout • 21 dBm Output Power at 18 G H z ■ High Associated Gain, 9 dB at 18 G H z ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -4 0 G H z ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface

RA 8040

Abstract: transistor SMD c5c phl 409 64x4 memory SMD cq 603 transistor BIM G18 Y1 smd transistor asy CQ256
Contextual Info: m e te ! v3 .0 - m 40MX and 42MX Families FPGAs F e a tu re s • QML Certification H ig h C a p a c ity • Ceramic Devices Available to DSCC SMD • Single Chip ASIC Alternative E a s e o f In t e g r a tio n • 2,000 to 36,000 Available Logic Gates

RTM 866 - 480

Abstract: saj 141 OA67 wd 969 ir 40MX04 RTM 866 - 485 kSO 947 262
Contextual Info: 40 Preliminary D ala Sheet -» Revision 1.1 I ntegr ator SeriesFP GAs: 40MX and 42MX Families Features * Deterministic, User-Controllable Timing Via DirectTime Software Tools. High C apacity * MX Diagnostics and Debug Supported by Silicon Explorer. * 2,000 to 52,000 Available Logic Gates

energy tapping identifier wireless data acquisition

Abstract: mini project using microcontroller toy car CD 5888 CB SMD IC centrifugal washing machine working principle car reverse horn mini project report Microcontroller-based Ultrasonic Distance Meter SKRP 1000 A1 alcohol identifier in automobiles abstract 34993 car chip ic gps clock with MC68HC11 D3
Contextual Info: Sensors Device Data Freescale Semiconductor Reference Manual DL200 REV. 7 1/2007 Freescale Semiconductor DL200 Rev 7, 01/2007 Table of Contents Section One - General Information Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1

KGF1203

Abstract: k1203 3543 9223 W1121 7490 pin configuration
Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0017-38-71 ¡ electronic components KGF1203 ¡ electronic components KGF1203 Balanced Mixer GENERAL DESCRIPTION The KGF1203, designed for UHF-band up-converters, is a balanced-mixer IC that features high