74s188 programming
Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
Contextual Info: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE
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38510/machmil-m-3851074s188 programming74s471+8n82s0674s470dip18 packagestr 52100marking code n-channel mos field effect transistor74s472 prom programming8080a74s287 programming instructions
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la 76805 volt on pin
Abstract: intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall
Contextual Info: Intel Corporation 3065 Bowers Avenue • Santa Clara, CA 95051 Telephone: 408 987-8080 TWX: 910-338-0026- Telex: 34-6372 inter Component Data Catalog 1978 Numerical and Functional Indexes 1 General Information 2 Random Access Memory 3 Read Only Memory 4
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mcs-4/40mcs-48mcs-80/85-883b+10la 76805 volt on pinintel 8708 epromm3002pulse m3001eprom 87082316a romupp-103interfacing 8275 crt controller with 8086intel 1402apascall
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6301-1 prom
Abstract: 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES The 82HS181 is fie ld p rog ra m m a b le , w h ich m eans th a t cu s to m p a tte rn s are im m e d ia te ly a va ila b le by fo llo w in g th e fu s in g
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8192-bit1024x882hs181/82hs181a82hs181+14n82hs185n82s25n82s16tbp18sa030j6301-1 prom3622 prommmi 3601prom 3601intel 3601 promprom intel 36019344cn82s14174s189n82s137
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N82S191
Abstract: 6301-1 prom 82S191 SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 16,384-BIT BIPOLAR PROM 2048 X 8 DESCRIPTION The 82S191 Is field programmable, which means that custom patterns are Immediate ly available by following the fusing proce dure given in this data manual. The 82S191 is supplied with all outputs at a logical low.
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384-bit2048x882s191n82s191+11n82hs185n82s25n82s166301-1 promsignetics prom6331-1prom intel 3601signetics prom n82s14174s200hm76161-593427c
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6301-1 prom
Abstract: MMI 6301-1 93427C 6331-1 MMI 6341-1 dm74s472 PROM intel 3601 DM74S570 MMI 6330 N82S23
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 82HS195 T.S. 16,384-BIT BIPOLAR PROM (4 0 9 6 x 4 ) A d v a n c e Inform ation DESCRIPTION FEATURES The 82H S 19 5 is fie ld p ro g ra m m a b le , w h ic h m e a n s th a t c u s to m p a tte rn s are im m e d i a te
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384-bit4096x482hs19593427c+12n82s12993436cn82s1306301-1 prommmi 6301-16331-1mmi 6341-1dm74s472prom intel 3601dm74s570mmi 6330n82s23
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ay-5-1012
Abstract: ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor
Contextual Info: GENERAL INFORMATION lie of Contents • Alphanumeric Index • Selection Guides • Glossary INTERCHANGEABiliTY GUIDE MOS MEMORIES TTL MEMORIES ECl MEMORIES MICROPROCESSOR SUMMARY 38510/MACH IV PROCUREMENT SPECIFICATION JAN Mll-M-38510 INTEGRATED CIRCUITS
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38510/machmll-m-38510z501300z501200+13z501201z012510zol1510ay-5-1012ali m 3329processor ali 3329ali 3329 bali 3329sn74188sn74s188str 52100sn7452replacement of bel 187 transistor
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N82S185
Abstract: N82S141 93427c 74S200 N82S147 6331-1 6301-1 prom 74S301 DM74S287 PROM intel 3601
Contextual Info: BIPOLAR M E M O R Y M AY 1962 8192-BIT BIPOLAR PROM 2 0 4 8 x 4 82S185(T.S.) DESCRIPTIO N FEATURES T h e 82S 185 is fie ld p ro g ra m m a b le , w h ic h
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8192-bit2048x482s185n82s185+12n82hs185n82s25n82s16n82s14193427c74s200n82s1476331-16301-1 prom74s301dm74s287prom intel 3601
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N82S141
Abstract: 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 92-BIT BIPOLAR PROM 2 0 4 8 x 4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ly available by fo llo w in g th e fu sin g p roce
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8192-bit2048x482hs185/82hs185a82hs185+14n82hs185n82s25n82s16tbp18sa030jn82s14193427c6331-1n82s137mmi 6301-174s200n82s12974s206mmi 6341-1am27s29c
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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dg211dg300dg308tca965 equivalent+9uln2283capacitor 473j 100nuaf771transistor gdv 65apbd352303cm2716taa2761taa4761uln2401
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N82S181
Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.
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8192-bit1024x882s180/82s181+1082s181n82s181n82s14174s200mmi 36016331-1 promtbp24sa1093427cn82s147mmi 6330
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