93 69 MARKING CODE Search Results
93 69 MARKING CODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 5446/BEA | Rochester Electronics LLC | 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
|
||
| 54LS190/BEA | Rochester Electronics LLC | 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
|
||
| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
|
||
| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
|
||
| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
|
93 69 MARKING CODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
c639
Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
|
Original |
3-03w4-03w5-03wod-123+12 | |
c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
|
OCR Scan |
3-03w4-03w5-03wod-123+12 | |
MARKING 01B
Abstract: alpha numeric marking 0603 E96 Series marking code E96 marking codes 93
|
Original |
marking 01balpha numeric marking 0603e96 seriesmarking code e96+1 | |
transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
|
Original |
3-02w3-03w3-04w3-05w+16 | |
rkm 33 transistor
Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
|
Original |
imb11aimb16imb17aimd10a+16 | |
TH-450 CRIMPING TOOLContextual Info: General Index MW, 62 Sizes and Dimensions, 62 TMW, 62 Pin Spacing .050 Unshielded Systems, 1 Headers, 1 MDR, 1 Wiremount Sockets, 1 .100 Unshielded Systems, 8, 17 Boardmount Headers, 12 Boardmount Sockets, 13,14, 17 Card-Edge Connectors, 15 DIN 41612 Connectors, 17 |
OCR Scan |
yr-1285vfp-876vtn-200th-450 crimping tool | |
ITT CANNON ms3106
Abstract: TXR58 ms3106 connector angle raychem tinel lock adaptor
|
Original |
2000txr58-1ch00-02s0-00btxrsbab00-2012txr58scd+4 | |
marking code mc
Abstract: 4-87456-0
|
OCR Scan |
10dec9602jun9823jul98175g-3+7 | |
|
Contextual Info: Data Sheet 64MB SDR – SoDIMM Module – 144 Pin SO-DIMM Rev.1.2 19.06.2009 HELIOS3 Features: SSN01632O3B31MT-75 • 144-Pin 32-bit Small Outline Dual-In-Line Synchronous DRAM Modules for industrial applications 64MB PC133 / 100 in COB Technique • SDRAM component base: |
Original |
ssn01632o3b31mt-75144-pin32-bitpc133+2 | |
RTF100
Abstract: RPC 2010 27 5 R EIA-96 R020 RC-1009B RTF50
|
Original |
1/16w1/10w10ppm15ppm+6 | |
|
Contextual Info: SURFACE MOUNT SURFACE MOUNT THIN FILM CHIP RESISTORS RTF Exceptionally low tolerance 0402 and 2512 size Low noise performance Highly suited for audio amongst others RATING Size Code 0402 Power Rating 1/16w Max. Working Voltage 50v Max. Overload Voltage 100v |
Original |
1/16w1/10w10ppm15ppm+2 | |
|
Contextual Info: Resistance Value Code 5% Tolerance : 3 digits First 2 digits are significant figures, third digit is number of zeros. Letter R is decimal point . Examples 1% Tolerance : 1R0 1.0 ohm 100 10 ohm 101 100 ohm 4 digits (First 3 digits are significant figures, fourth digit is number of zeros. |
OCR Scan |
eia-960xl02 | |
113 marking code transistor ROHM
Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
|
Original |
113 marking code transistor rohmdtds14gpdtb133hkarkm transistor+6 | |
H5DU5162Contextual Info: Data Sheet Rev.1.1 09.06.2010 256MB DDR – SDRAM SoDIMM 200PIN SoDIMM Features: SDN03264C1CE1HY-50R 256MB PC-3200 in FBGA Technique RoHS compliant Options: • Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 • Module densities 256MB with 4 dies and 1 rank |
Original |
256mb200pinsdn03264c1ce1hy-50rpc-3200+2 | |
|
|
|||
MT46V32M16PContextual Info: Data Sheet Rev.1.0 26.05.2008 512MB DDR – SDRAM SoDIMM 200PIN SoDIMM Features: SDN06464E1C62MT-50R 512MB PC-3200 in TSOP Technique RoHS compliant Options: 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 1 Module densities 512MB with 8 dies and 2 ranks |
Original |
512mb200pinsdn06464e1c62mt-50rpc-3200+2 | |
|
Contextual Info: Data Sheet Rev.1.0 13.01.2010 512MB DDR – SDRAM DIMM 184PIN DIMM Features: SDU06464B5BE1HY-50R 512MB PC-3200 in TSOP Technique RoHS compliant Options: 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 1 Module densities 512MB with 8 dies and 1 rank |
Original |
512mb184pinsdu06464b5be1hy-50rpc-3200+1 | |
|
Contextual Info: Data Sheet Rev.1.1 09.02.2010 1024MB DDR SDRAM SoDIMM 200Pin SO-DIMM Features: SDN01G64L1BE2HY-50R 1 200-pin 64-bit Small Outline Dual-In-Line. Double Data Rate synchronous DRAM Module for industrial applications 1 DDR-SDRAM component base: Hynix H5DU5182EFR die rev.: E |
Original |
1024mb200pinsdn01g64l1be2hy-50r200-pin+3 | |
|
Contextual Info: TLJ Series Tantalum Solid Electrolytic Chip Capacitors High CV Consumer Series • High Volumetric Efficiency • 3x reflow 260°C compatible • 13 case sizes available including low profile codes • Environmentally friendly • Consumer applications e.g. mobiles phones, PDA etc. |
Original |
80ature120hz | |
|
Contextual Info: TLJ Series Tantalum Solid Electrolytic Chip Capacitors High CV Consumer Series • High Volumetric Efficiency • 3x reflow 260°C compatible • 13 case sizes available including low profile codes • Environmentally friendly • Consumer applications e.g. mobiles phones, PDA etc. |
Original |
10-680f120hzj-std-020c | |
TLJS336M010Contextual Info: TLJ Series Tantalum Solid Electrolytic Chip Capacitors High CV Consumer Series • High Volumetric Efficiency • 3x reflow 260°C compatible • 13 case sizes available including low profile codes • Environmentally friendly • Consumer applications e.g. mobiles phones, PDA etc. |
Original |
10-680f120hzj-std-020ctljs336m010 | |
|
Contextual Info: Data Sheet Rev.1.0 02.04.2009 1024MB DDR – SDRAM DIMM 184PIN DIMM Features: SDU01G64H3BE2HY-50R 1024MB PC-3200 in TSOP Technique RoHS compliant Options: 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 1 Module densities 1024MB with 16 dies and 2 ranks |
Original |
1024mb184pinsdu01g64h3be2hy-50rpc-3200+1 | |
|
Contextual Info: TLJ Series Tantalum Solid Electrolytic Chip Capacitors High CV Consumer Series • High Volumetric Efficiency • 3x reflow 260°C compatible • 13 case sizes available including low profile codes • Environmentally friendly • Consumer applications e.g. mobiles phones, PDA etc. |
Original |
10-680f13accordingj-std-020120hz | |
|
Contextual Info: TLJ Series Tantalum Solid Electrolytic Chip Capacitors High CV Consumer Series • High Volumetric Efficiency • 3x reflow 260°C compatible • 13 case sizes available including low profile codes • Environmentally friendly • Consumer applications e.g. mobiles phones, PDA etc. |
Original |
10-680fj-std-020120hz | |
|
Contextual Info: TLJ Series Tantalum Solid Electrolytic Chip Capacitors High CV Consumer Series • High Volumetric Efficiency • 3x reflow 260°C compatible • 13 case sizes available including low profile codes • Environmentally friendly • Consumer applications e.g. mobiles phones, PDA etc. |
Original |
10-680f120hzj-std-020c | |