91S AMPLIFIER Search Results

sony led tv electronic diagram

Abstract: CXA1691 pj 88 iv AM SW IC cxa1691 Pj 455B BFCFL-455 am sw fm radio printed circuit board pfwe8 SFE10.7MA5 sfu 455b
Contextual Info: SONY CXA1691 M/S FM/AM Radio Description C X A 16 91M /S is a one-chip F M /A M radio IC designed C X A 16 91M 2 8 pin S O P Plastic C X A 16 91S 30 pin S D IP (Plastic) for radio-cassette tap e recorders. Features • Small number of peripheral components.

Contextual Info: B 56 9-97 J210, J211 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • AUDIO AMPLIFIERS • GENERAL PURPOSE AMPLIFIERS Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 25 V Continuous Forward Gate Current 10 mA

Contextual Info: 9 -9 7 B 17 2 N 4 8 6 7 , 2 N 4 8 67 A , 2 N 4 8 6 8 , 2 N 4 8 6 8 A , 2 N 4 8 6 9 , 2 N 4 8 6 9 A n^ h  n n Ë l s ÎÜ c Ô n T Ü n c t Î Ô ^ • AUDIO AMPLIFIERS e l d - e f f e c t t r  n s Îs t o r Absolute maximum ratings at Ta = 25°C Reverse Gate Source & Reverse Gate Drain Voltage

PN4416

Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-ChannelJFET High Frequency Amplifier 2N4416/2N4416A /PN4416 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) FEATURES • • • •

NPDS5566

Contextual Info: S E y i D D N P U C T 'G R NPDS5565 NPDS5566 N-Channel General Purpose Dual Amplifier Sourced from Process 96. Absolute Maximum Ratings* Symbol ,a Parameter Value Units V V dg Drain-Gate Voltage 40 V gs Gate-Source Voltage 40 V Igf Gate Current 10 mA T j , T S1g

HA118070FP

Abstract: ha118070
Contextual Info: HA118070/FP • Video Switch with Preamplifier 1 circuit, 2 contacts Features Ordering Information • • • • Type No. Package HA118070 300mil 8-pin plastic DIP HA118070FP 8-pin plastic SOP 5V single supply operation 2 inputs, 2 control inputs 3 gain levels available (0, 6, 10dB)

HEXFETs FETs

Abstract: ALPS 102 lg motor DD ior 050a
Contextual Info: Data Sheet No. PD-9.397E INTERNATIONAL RECTIFIER IRFG911Q S N 7335 JA N T X 2N 7335 JA N T X V 2N 7335 HEXFET TRANSISTORS 4PCHANNEL POWER MOSFETs 14 LEAD DU AL-IN-LINE Q UAD C ER A M IC S ID E BRAZED PACKAGE [REF: MIL-S-19500/599] Product Summary -100 Volt, 1.4 Ohm (P-Channel)

ecg107

Abstract: AV13 ECG1131 T-77 GBU 08
Contextual Info: PHILIPS E C G INC 17E t.bS3T50 • • • • • • • • e TV C H RO M A SIG N A L AM PLIFIER T V Chroma S ig n a l A m p lif ie r Function A C C A m p lifie r Chroma S ig n a l A m p lifie r Burst G a te A m p lifie r A C C Peak D e te cto r C o lo r K ille r

SELF vk200

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER

Contextual Info: UNITRODE CORP iS 9347963 DE § ^ 3 4 7 ^ 3 GDlD7flb •=] U N I T R O D E CORP 92D 10786 POWER MOSFET TRANSISTORS D/-37-'*' UFN1130 700 Volt, 3.5 Ohm N-Channel FEATURES DESCRIPTION This new Unitrode power MOSFET utilizes the latest high voltage advanced technology

H-312

Contextual Info: Data Sheet No. PD-9.679B INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHIM7250 IRHN8S50 N-CHANNEL MEGA RAD HARD 200 Volt, 0.10», MEGA RAD HARD HEXFET International Rectifier’s M EG A RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability

mega 329

Abstract: IRHN7450 IRHN8450
Contextual Info: Data Sheet No. PD-9.819A INTERNATIONAL RECTIFIER I3R AVALANCHE ENERGY AND dv/dt RATED HEXFEF TRANSISTORS IRHN7450 IRHN8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.450, MEGA RAD HARD HEXFET International Rectifier's MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability

Contextual Info: Ullli SGS-THOMSON [M O [M [ÍL iC T l iD © S SG3524 REGULATING PULSE WIDTH MODULATORS • COMPLETE PWM POWER CONTROL CIRCUI­ TRY ■ UNCOMMITTED O UTPUTS FOR SINGLE-ENDED OR PUSH PULL APPLICATIONS ■ LOW STANDBY CURRENT . 8 mA TYPICAL ■ OPERATION UP TO 300 KHz

N8230B

Abstract: H309 N8230
Contextual Info: Data Sheet No. PD-9.822A INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN7230 IRHN8S30 N-CHANNEL s MEGA RAD HARD 200 Volt, 0.40Q, MEGA RAD HARD HEXFET International Rectifier’s M EGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability

LF 13471

Abstract: UFN140
Contextual Info: UNITRODE CORP 9347963 U N I T R O D E CORP 92D 10612 07^ $f-/ 5 POWER MOSFET TRANSISTORS ¡j^jjo 100 Volt, 0.085 Ohm N-Channel UFN142 UFN143 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

UFN742

Abstract: N-Channel mosfet 400v to220 2314Y UFN741
Contextual Info: TS UNITRODE CORP 9347963 ë F | ‘i 3 M 7 cib3 DGlG7t.a b U N I T R O D E CORP 92D 10762 |~~ D T-" ^ ? V 3 POWER MOSFET TRANSISTORS 400 Volt, 0.55 Ohm N-Channel FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling

H209

Abstract: H214
Contextual Info: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l l O R 1 REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS SN7S68 JANSRSN7SB8 JANSHSN7S68 N-CHANNEL MEGA RAD HARO 100 Volt, 0.06512, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs

Contextual Info: RF2418 MICRO »DEVICES ] LOW CURRENT LNA/MIXER Typical Applications • Commercial and Consumer Systems • Portable Battery Powered Equipment • General Purpose Frequency Conversion • UHF Digital and Analog Receivers • Digital Communications Systems

h226

Abstract: 9713A
Contextual Info: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER I Q R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7230 IRHM8230 N-CHANNEL MEGA RAD HARD 200 Volt, 0.40», MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs

Contextual Info: RP104x SERIES 150mA ULTRA LOW SUPPLY CURRENT LDO REGULATOR NO.EA-150-131016 OUTLINE The RP104x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low supply current and low ON-resistance. Each of these ICs consists of a voltage reference unit, an error amplifier,

te 2443 MOTOROLA transistor

Abstract: 1S2210 MOSFET 830 63 ng MRF171
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 45 W N-C H A N N E L M O S BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR FET . designed p rim a rily fo r w ideband large-signal output and driver stages in the 2 .0 -2 0 0 MHz frequency range

110B6

Abstract: ADC08064
Contextual Info: ADC08061/ ADC08062/ADC08064/ ADC08068 S 3 NSemiconductor a t io n a l ADC08061/ ADC08062/ADC08064/ADC08068 500 ns A/D Converter with S/H Function and Input Multiplexer General Description K ey Specifications Using a patented multi-step A /D conversion technique, the

L493

Abstract: T9249
Contextual Info: r-l This is to certify that the evaluation described herein was designed and executed by personnel of Contech Research, Inc. It was performed with the concurrence of Sarntec Corp. who was the test sponsor. All equipment and measuring instruments used during testing were

vmi x50

Abstract: lzp 1045
Contextual Info: SEPTEMBER 14, 1994 TEST REPORT #94408 QUALIFICATION TESTING FFSD SERIES CONNECTOR SAMTEC CORPORATION APPROVED BY: THOMAS PEEL DIRECTOR OF TEST PROGRAM DEVELOPMENT CONTECH RESEARCH, INC. 1 This is to certify that the evaluation described herein was designed and executed by personnel of Contech Research, Inc.