90V30 Search Results

Contextual Info: MODELS TS63X, TS63Y, TS63Z Cermet Trimmers Surface Mount, 1 /4 " Square, Multiturn Fully Sealed, Industrial Grade FEATURES • 1/4" [6.35mm] square. • 0.25 watt at + 85°C. • Multiturn operation. • Fully sealed. • Very low temperature coefficient.

Contextual Info: GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm • Enhancement-mode • Peak collector current: IC = 150 A max TSON-8 • Compact and Thin (TSON-8) package Rating Unit VCES 400 V DC VGES

10G131

Contextual Info: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode

Contextual Info: AP28G40GEO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Peak Current Capability C C C VCE 400V ICP 150A C Low Gate Drive Strobe Flash Applications TSSOP-8 E E E C G G E Absolute Maximum Ratings

Contextual Info: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)

10g131

Abstract: GT10G131 RG110 ic 3 51 2A
Contextual Info: GT10G131 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT10G131 ○ 直列式自動調光ストロボ用 • 薄型面実装外囲器です。 単位: mm : 樹脂厚み 1.5 ± 0.2 mm • 第 5 世代 トレンチゲート構造 品です。

8g136

Abstract: toshiba week code marking
Contextual Info: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Maximum Ratings (Ta = 25°C)

Contextual Info: GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit: mm • Enhancement-mode • Low gate drive voltage: VGE = 2.5 V min (@IC = 130 A) • Peak collector current: IC = 130 A (max) • Compact and Thin (TSON-8) package

10G131

Contextual Info: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)

Contextual Info: AP28G45GEO-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Peak Current Capability E Low Gate Drive Strobe Flash Applications G E E VCE 400V ICP 150A C C TSSOP-8 C C C G E Absolute Maximum Ratings

Contextual Info: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Absolute Maximum Ratings (Ta = 25°C)

8g134

Abstract: GT8G134 toshiba lead free mark
Contextual Info: GT8G134 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G134 Strobe Flash Applications • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) Unit: mm (@VGE=2.5V(min)/ Absolute Maximum Ratings (Ta = 25°C)

8G151

Abstract: GT8G151
Contextual Info: GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm • Enhancement-mode VGE = 2.5 V min. (@IC = 150 A) • Peak collector current: IC = 150 A (max) TSON-8 8 0.2 0.65±0.05 Rating Unit VCES

Contextual Info: MODEL T 18 C erm et Trim m ers 3/4" [19.05m m ] Rectangular, M ultiturn Industrial Grade Fine Pitch Screw for Outstanding Setting Ability High Performance Plastic Case Large Size Saddle to Prevent Back-Lash Metal Collector Improves Power Dissipation FEA TU R ES

Contextual Info: AP28G45GEO-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability E ▼ Low Gate Drive ▼ Strobe Flash Applications G E E VCE 400V ICP 150A C C TSSOP-8

Contextual Info: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)

GT10G131

Abstract: 10G131
Contextual Info: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode

GT8G136

Abstract: 8g136
Contextual Info: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) Unit: mm (@VGE=3.0V(min),Ta=70℃(max)/ Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) Unit: mm (@VGE=3.0V(min),Ta=70℃(max)/ Absolute Maximum Ratings (Ta = 25°C)

10g131

Abstract: ic MARKING QG GT10G131 TOSHIBA IGBT DATA BOOK NOR GATE IC A3170
Contextual Info: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Unit: mm Strobe Flash Applications • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode

8G133

Abstract: GT8G133 TOSHIBA IGBT DATA BOOK NOR GATE IC toshiba lead free mark
Contextual Info: GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) • Peak collector current: IC = 150 A (max)

igbt transistor

Abstract: 8g133
Contextual Info: GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) • Peak collector current: IC = 150 A (max)

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8g133

Abstract: GT8G133 IGBT GT8G133
Contextual Info: GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) • Peak collector current: IC = 150 A (max)